基于超薄高k氧化物和本征量子阱形成的MIEIS器件共振隧穿的实验证明

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242295

J. Reyes, Hector Manuel Uribe Vargas

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引用次数: 0

摘要

谐振隧道二极管(RTD)由于其非线性特性在纳米电子学中得到了广泛的应用。在这项工作中，金属-绝缘体-绝缘体-绝缘体-半导体(MIIIS)器件使用原子层沉积(ALD)高k氧化物的栅极堆叠制造，并且由于三个负差分电阻(NDR)区而获得了共振隧道的实验证明。

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Experimental proof of resonant tunneling in MIEIS devices based on ultra-thin high-k oxides and intrinsic quantum well formation

Resonant tunneling diodes (RTD) are widely used in nano electronics due to their nonlinear properties. In this work, Metal-Insulator-Insulator-Insulator-Semiconductor (MIIIS) devices were fabricated using a gate stack of atomic-layer deposited (ALD) high-k oxides and experimental proof of Resonant Tunneling was obtained due to three Negative Differential Resistance (NDR) zones.

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2017 Silicon Nanoelectronics Workshop (SNW)

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