Atom probe study of erbium and oxygen co-implanted silicon

Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Yudai Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai
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引用次数: 3

Abstract

It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to 4I13/24I15/2 transition of Er3+. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.
铒氧共注入硅的原子探针研究
在λ=1.54 pm处,由于Er3+的4I13/2→4I15/2跃迁,铒(Er)成为光发射源。氧(O)与Er共掺杂的方法作为一种通过形成Er:O络合物获得更有效光学增益的候选方法受到了人们的关注。虽然一些模拟预测了Er:O配合物的平衡结构,但很难从实验上理解这些注入离子与退火后的光学活化之间的关系。在本次研讨会上,我们报告了用原子探针断层扫描研究Er和O共植入Si的三维分布的初步结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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