Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Yudai Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai
{"title":"Atom probe study of erbium and oxygen co-implanted silicon","authors":"Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Yudai Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai","doi":"10.23919/SNW.2017.8242316","DOIUrl":null,"url":null,"abstract":"It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to <sup>4</sup>I<inf>13/2</inf> →<sup>4</sup>I<inf>15/2</inf> transition of Er<sup>3+</sup>. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242316","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to 4I13/2 →4I15/2 transition of Er3+. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.