5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era最新文献_第2页

RF-MEMS switchable inductors for tunable bandwidth BAW filters 用于可调带宽BAW滤波器的RF-MEMS可开关电感

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI: 10.1109/DTIS.2010.5487536

S. Aliouane, A. Kouki, R. Aigner

引用次数: 18

Concentric Circular Array for DOAs estimation of coherent sources with ESPRIT algorithm 基于ESPRIT算法的同心圆阵列相干源DOAs估计

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI: 10.1109/DTIS.2010.5487542

S. Akkar, F. Harabi, A. Gharsallah

引用次数: 3

Trends and challenges of SRAM reliability in the nano-scale era 纳米时代SRAM可靠性的发展趋势与挑战

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI: 10.1109/DTIS.2010.5487565

Seyab Khan, S. Hamdioui

引用次数: 38

Adaptive image transfer for wireless sensor networks (WSNs) 无线传感器网络的自适应图像传输

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI: 10.1109/DTIS.2010.5487597

Mohsen Nasri, A. Helali, H. Sghaier, H. Maaref

{"title":"Adaptive image transfer for wireless sensor networks (WSNs)","authors":"Mohsen Nasri, A. Helali, H. Sghaier, H. Maaref","doi":"10.1109/DTIS.2010.5487597","DOIUrl":"https://doi.org/10.1109/DTIS.2010.5487597","url":null,"abstract":"When using wireless sensor networks for real-time data transmission, some critical points should be considered. Restricted computational power, memory limitations, narrow bandwidth and energy supplied present strong limits in sensor nodes. Therefore, maximizing network lifetime and minimizing energy consumption are always optimization goals. To reduce the energy consumption of the sensor network during image transmission, an energy efficient image compression scheme is proposed. The image compression scheme reduces the required memory. To address the abovementioned concerns, in this paper we describe an approach of image transmission in WSNs, taking advantage of JPEG2000 still image compression standard and using MATLAB and C from Jasper. JPEG2000 provides a practical set of features, not necessarily available in the previous standards. These features were achieved using techniques: the Discrete Wavelet Transform (DWT), and Embedded Block Coding with Optimized Truncation (EBCOT). Performance of the proposed image compression scheme is investigated with respect to image quality and energy consumption. Simulation results are presented and show that the proposed scheme optimizes network lifetime and reduces significantly the amount of required memory by analyzing the functional influence of each parameter of this distributed image compression algorithm.","PeriodicalId":423978,"journal":{"name":"5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114606676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 39

Statistical modeling for dysphonic classification 语音障碍分类的统计建模

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI: 10.1109/DTIS.2010.5487588

Assia Ghelis, M. Guerti, C. Fredouille

引用次数: 0

Optical properties of BxInyGa1-x-yAs/GaAs grown by Metal Organic Chemical Vapor deposition for solar cell 金属有机化学气相沉积法生长BxInyGa1-x-yAs/GaAs的光学性质

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI: 10.1109/DTIS.2010.5487562

R. Hamila, F. Saidi, H. Maaref, P. Rodriguez, L. Auvray, Y. Monteil

{"title":"Optical properties of BxInyGa1-x-yAs/GaAs grown by Metal Organic Chemical Vapor deposition for solar cell","authors":"R. Hamila, F. Saidi, H. Maaref, P. Rodriguez, L. Auvray, Y. Monteil","doi":"10.1109/DTIS.2010.5487562","DOIUrl":"https://doi.org/10.1109/DTIS.2010.5487562","url":null,"abstract":"The present invention further includes a method for substantially lattice matching single-crystal III–V semiconductor layers by including boron in the chemical structure of active cells layers in multi-junction solar. Solar photovoltaic devices, i.e., solar cells, are devices capable of converting solar radiation into usable electrical energy. The energy conversion occurs as the photovoltaic-effect which occurs in a cell composed of a p-type semiconductor layer adjacent to an n-type semiconductor layer, here after referred to as p-n junction cell. Solar radiation impinging on a solar cell and absorbed by active region of semiconductor material generates electricity. Therefore, a quaternary material III–V semiconductor BInGaAs has been tested for the application in solar cells [1]. Single layer has been grown lattice matched on GaAs using Metal Organic Chemical Vapor deposition (MOCVD). Optical study has been achieved of B0.0108In0.36Ga0.062As quantum well. At room temperature (300 K) PL study has shown an asymmetric PL band is around 1.19 eV of the emission energies. Based in these experimental results, we have suggested that the band gap energies of BInGaAs QW could be adequate for active cells layers in multijunction solar.","PeriodicalId":423978,"journal":{"name":"5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122013004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An efficient zero length prefix algorithm for H.264 CAVLC decoder on TMS320C64 基于TMS320C64的H.264 CAVLC解码器零长度前缀算法

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI: 10.1109/DTIS.2010.5487543

T. Damak, I. Werda, Mohamed Ali Ben Ayad, N. Masmoudi

引用次数: 5

Design optimization in SOI-based high sensitivity piezoresistive cantilever devices 基于soi的高灵敏度压阻悬臂器件的设计优化

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI: 10.1109/DTIS.2010.5487599

Y. Kebbati, M. Boujrharhe

引用次数: 1

Reliability considerations in dynamic voltage and frequency scaling schemes 动态电压和频率标度方案的可靠性考虑

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI: 10.1109/DTIS.2010.5487569

F. Firouzi, M. Salehi, A. Azarpeyvand, S. M. Fakhraie, F. Wang

引用次数: 6

RESURF nLDMOSFET in 0.351µm BiCMOS technology-characterization and modeling 0.351µm BiCMOS技术中的RESURF nLDMOSFET -表征和建模

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI: 10.1109/DTIS.2010.5487564

M. Abouelatta-Ebrahim, C. Gontrand, A. Zekry

{"title":"RESURF nLDMOSFET in 0.351µm BiCMOS technology-characterization and modeling","authors":"M. Abouelatta-Ebrahim, C. Gontrand, A. Zekry","doi":"10.1109/DTIS.2010.5487564","DOIUrl":"https://doi.org/10.1109/DTIS.2010.5487564","url":null,"abstract":"In this paper, an nLDMOS transistor is developed by slight modifications of the base process steps of 0.35µm BiCMOS technology. Extra two masks are used for the formation of the body region (LB-PWELL) and the drift region with slightly added thermal budget and without resorting to high-tilt implants. The proposed device has a breakdown voltage independent of the epitaxial layer thickness. The specific ON-resistance (RON,SP) and the breakdown voltage (BV) are 1.5 mΩ.cm2 and 60V, respectively, so, the device can typically be operated around 42V supply voltage, which is suitable for the new automotive applications. The maximum drain current obtained at VGS of 3.3V is 0.42 mA/µm. A simple subcircuit model for the entire device is built using a two module approach, one for the intrinsic MOS area and the other for the drift region. The PSpice model parameters of the intrinsic MOS part are extracted using a system that links the ICCAP extraction tool with the results of the ISE-TCAD tools. The simulation results using the PSpice model are compared to the results provided by ISE-TCAD tools, and the accuracy at room temperature is less than 5% for the whole voltage domain.","PeriodicalId":423978,"journal":{"name":"5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121083612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0