RESURF nLDMOSFET in 0.351µm BiCMOS technology-characterization and modeling

M. Abouelatta-Ebrahim, C. Gontrand, A. Zekry
{"title":"RESURF nLDMOSFET in 0.351µm BiCMOS technology-characterization and modeling","authors":"M. Abouelatta-Ebrahim, C. Gontrand, A. Zekry","doi":"10.1109/DTIS.2010.5487564","DOIUrl":null,"url":null,"abstract":"In this paper, an nLDMOS transistor is developed by slight modifications of the base process steps of 0.35µm BiCMOS technology. Extra two masks are used for the formation of the body region (LB-PWELL) and the drift region with slightly added thermal budget and without resorting to high-tilt implants. The proposed device has a breakdown voltage independent of the epitaxial layer thickness. The specific ON-resistance (RON,SP) and the breakdown voltage (BV) are 1.5 mΩ.cm2 and 60V, respectively, so, the device can typically be operated around 42V supply voltage, which is suitable for the new automotive applications. The maximum drain current obtained at VGS of 3.3V is 0.42 mA/µm. A simple subcircuit model for the entire device is built using a two module approach, one for the intrinsic MOS area and the other for the drift region. The PSpice model parameters of the intrinsic MOS part are extracted using a system that links the ICCAP extraction tool with the results of the ISE-TCAD tools. The simulation results using the PSpice model are compared to the results provided by ISE-TCAD tools, and the accuracy at room temperature is less than 5% for the whole voltage domain.","PeriodicalId":423978,"journal":{"name":"5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2010.5487564","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, an nLDMOS transistor is developed by slight modifications of the base process steps of 0.35µm BiCMOS technology. Extra two masks are used for the formation of the body region (LB-PWELL) and the drift region with slightly added thermal budget and without resorting to high-tilt implants. The proposed device has a breakdown voltage independent of the epitaxial layer thickness. The specific ON-resistance (RON,SP) and the breakdown voltage (BV) are 1.5 mΩ.cm2 and 60V, respectively, so, the device can typically be operated around 42V supply voltage, which is suitable for the new automotive applications. The maximum drain current obtained at VGS of 3.3V is 0.42 mA/µm. A simple subcircuit model for the entire device is built using a two module approach, one for the intrinsic MOS area and the other for the drift region. The PSpice model parameters of the intrinsic MOS part are extracted using a system that links the ICCAP extraction tool with the results of the ISE-TCAD tools. The simulation results using the PSpice model are compared to the results provided by ISE-TCAD tools, and the accuracy at room temperature is less than 5% for the whole voltage domain.
0.351µm BiCMOS技术中的RESURF nLDMOSFET -表征和建模
本文通过对0.35 μ m BiCMOS技术的基本工艺步骤进行轻微修改,开发了一种nLDMOS晶体管。额外的两个掩模用于形成身体区域(LB-PWELL)和稍微增加热预算的漂移区域,而无需采用高倾斜植入物。所提出的器件具有与外延层厚度无关的击穿电压。比导通电阻(RON,SP)和击穿电压(BV)为1.5 mΩ。因此,该器件通常可以在42V供电电压下工作,适用于新的汽车应用。在3.3V的VGS下获得的最大漏极电流为0.42 mA/µm。采用两个模块的方法建立了整个器件的简单子电路模型,一个用于固有MOS区域,另一个用于漂移区域。使用将ICCAP提取工具与ISE-TCAD工具的结果连接起来的系统提取固有MOS零件的PSpice模型参数。使用PSpice模型的仿真结果与ISE-TCAD工具提供的结果进行了比较,室温下整个电压域的精度小于5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信