Optical properties of BxInyGa1-x-yAs/GaAs grown by Metal Organic Chemical Vapor deposition for solar cell

The present invention further includes a method for substantially lattice matching single-crystal III–V semiconductor layers by including boron in the chemical structure of active cells layers in multi-junction solar. Solar photovoltaic devices, i.e., solar cells, are devices capable of converting solar radiation into usable electrical energy. The energy conversion occurs as the photovoltaic-effect which occurs in a cell composed of a p-type semiconductor layer adjacent to an n-type semiconductor layer, here after referred to as p-n junction cell. Solar radiation impinging on a solar cell and absorbed by active region of semiconductor material generates electricity. Therefore, a quaternary material III–V semiconductor BInGaAs has been tested for the application in solar cells [1]. Single layer has been grown lattice matched on GaAs using Metal Organic Chemical Vapor deposition (MOCVD). Optical study has been achieved of B0.0108In0.36Ga0.062As quantum well. At room temperature (300 K) PL study has shown an asymmetric PL band is around 1.19 eV of the emission energies. Based in these experimental results, we have suggested that the band gap energies of BInGaAs QW could be adequate for active cells layers in multijunction solar.