The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society最新文献_第3页

64/spl times/64 matrix-addressable arrays of GaN-based microLEDs 基于gan的微led的64/spl倍/64矩阵可寻址阵列

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-14 DOI: 10.1109/LEOS.2002.1159491

C. Jeon, H. Choi, P. Edwards, A. Bryce, M. Dawson

引用次数: 1

Continuous wave operation of MOCVD grown 1.55 /spl mu/m buried tunnel junction VCSELs MOCVD连续波运行生长1.55 /spl亩/m埋地隧道结VCSELs

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-10 DOI: 10.1109/LEOS.2002.1159495

H. Song, O. Kwon, W. Han, Y. Ju, J. Kim, J. Shin, B. Yoo

引用次数: 3

Adiabatic tapered mode converter for selectively-oxidized waveguide devices 用于选择性氧化波导器件的绝热锥形模变换器

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-10 DOI: 10.1109/LEOS.2002.1159423

G. Vawter

引用次数: 0

Efficient compression of digital holograms for Internet transmission of three-dimensional images 有效压缩数字全息图的互联网传输三维图像

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-10 DOI: 10.1109/LEOS.2002.1133904

T. Naughton, John B Mc Donald, Y. Frauel, B. Javidi

引用次数: 3

The evolution of transverse modes in GaInNAs VCSELs GaInNAs VCSELs中横模的演化

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-10 DOI: 10.1109/LEOS.2002.1134033

M. Othman, K. Tastavridis, J. Yong, J. Rorison, R. Penty, I. White

引用次数: 0

1200 nm highly strained GaInAs/GaAs surface emitting lasers 1200nm高应变GaInAs/GaAs表面发射激光器

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-10 DOI: 10.1109/LEOS.2002.1134032

F. Koyama, T. Miyamoto, M. Arai, T. Kondo

引用次数: 0

Proposal of wavelength trimming of 1.55 /spl mu/m GC-DFB laser using photoabsorption-induced disordering of superlattices 利用光吸收诱导的超晶格失序对1.55 /spl μ l /m GC-DFB激光器波长进行微调

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-10 DOI: 10.1109/LEOS.2002.1159548

W. Asawamethapant, Y. Nakano

{"title":"Proposal of wavelength trimming of 1.55 /spl mu/m GC-DFB laser using photoabsorption-induced disordering of superlattices","authors":"W. Asawamethapant, Y. Nakano","doi":"10.1109/LEOS.2002.1159548","DOIUrl":"https://doi.org/10.1109/LEOS.2002.1159548","url":null,"abstract":"Wavelength-division multiplexing (WDM) systems require their light sources to have an oscillation wavelength that matches predefined wavelength channels and are stable over a long period of time. One remaining issue of the multiple-wavelength DFB laser array is the poor wavelength reproducibility of individual lasers. In order to manage this problem, the concept of \"wavelength trimming\" was proposed. Wavelength trimming techniques include using chalcogenide glass having photo-induced refractive index change or relying on the photoabsorption-induced disordering (PAID) process. However, the problem with these wavelength trimming techniques is that they cause the lasing characteristics to change. In order to manage this problem, we propose a new wavelength trimming technique using photoabsorption-induced disordering of superlattices. We propose the new structure of GC-DFB laser with this technique that the superlattices was grown above quantum wells. Using this new GC-DFB laser structure, the superlattices can absorb laser photons before quantum wells and intermixing is induced at the superlattices instead of at the quantum wells. As a result, the lasing characteristics of laser, except for oscillation wavelengths, can be kept after wavelength trimming. We have demonstrated 0.32 nm wavelength trimming.","PeriodicalId":423869,"journal":{"name":"The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117173913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Materials and inks for full color PLED-displays 全彩色led显示屏的材料和油墨

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-10 DOI: 10.1109/LEOS.2002.1133992

H. Becker, S. Heun, A. Busing, A. Falcou, E. Breuning, A. Parham, J. Steiger

引用次数: 4

Investigation of spectral gain broadening for mode-locking using InGaAs/InAlGaAs multiple width quantum wells at 1550 nm 1550 nm InGaAs/InAlGaAs多宽度量子阱锁模光谱增益展宽研究

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-10 DOI: 10.1109/LEOS.2002.1159508

M. Jain, M. McCulloch, N. Langford, A. C. Bryce, C. Ironside

引用次数: 0

Determination of the optimum cluster parameters for a clustered free-space optical interconnect 聚类自由空间光互连最佳聚类参数的确定

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-10 DOI: 10.1109/LEOS.2002.1159599

M. Châteauneuf, A. Kirk

{"title":"Determination of the optimum cluster parameters for a clustered free-space optical interconnect","authors":"M. Châteauneuf, A. Kirk","doi":"10.1109/LEOS.2002.1159599","DOIUrl":"https://doi.org/10.1109/LEOS.2002.1159599","url":null,"abstract":"Parallel free-space parallel optical interconnects (FSOIs) have great potential for use as high bandwidth interconnects at the board-to-board and chip-to-chip levels Recent reports of the integration of large (1024) arrays of vertical-cavity surface-emitting laser (VCSEL) arrays to complementary metal-oxide semiconductor (CMOS) suggest that large parallel interconnects should be possible in this technology. We have introduced a technique to determine the optimum cluster dimensions for a free-space optical interconnect which deliver the maximum channel density for a given degree of misalignment tolerance. The sources are assumed to be multimode VCSELs (wavelength 850 nm, mode field diameter 6 /spl mu/m, M2 factor of 1.93 and VCSEL pitch 125 /spl mu/m). They are collimated by microlenses with a focal length of 250 /spl mu/m. The required interconnection distance results in a minilens focal length of 8.5 mm (assuming a single relay block to route the optical channels). This technique will be extended to cover arbitrary focal lengths and source parameters by incorporating an analytical calculation of ray aberrations. This approach has the potential to considerably simplify the design of clustered free-space optical interconnects.","PeriodicalId":423869,"journal":{"name":"The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121053959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2