M. Jain, M. McCulloch, N. Langford, A. C. Bryce, C. Ironside
{"title":"1550 nm InGaAs/InAlGaAs多宽度量子阱锁模光谱增益展宽研究","authors":"M. Jain, M. McCulloch, N. Langford, A. C. Bryce, C. Ironside","doi":"10.1109/LEOS.2002.1159508","DOIUrl":null,"url":null,"abstract":"Compared to conventional, identical width quantum well (IWQW) material, we have broadened the gain spectrum by around 35% using multiple width quantum well (MWQW) material. For colliding pulse mode-locked laser, pulse width shortening of around 9.2% is obtained for the MWQW device in comparison to the IWQW device.","PeriodicalId":423869,"journal":{"name":"The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society","volume":"27 55","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of spectral gain broadening for mode-locking using InGaAs/InAlGaAs multiple width quantum wells at 1550 nm\",\"authors\":\"M. Jain, M. McCulloch, N. Langford, A. C. Bryce, C. Ironside\",\"doi\":\"10.1109/LEOS.2002.1159508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Compared to conventional, identical width quantum well (IWQW) material, we have broadened the gain spectrum by around 35% using multiple width quantum well (MWQW) material. For colliding pulse mode-locked laser, pulse width shortening of around 9.2% is obtained for the MWQW device in comparison to the IWQW device.\",\"PeriodicalId\":423869,\"journal\":{\"name\":\"The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society\",\"volume\":\"27 55\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.2002.1159508\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2002.1159508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of spectral gain broadening for mode-locking using InGaAs/InAlGaAs multiple width quantum wells at 1550 nm
Compared to conventional, identical width quantum well (IWQW) material, we have broadened the gain spectrum by around 35% using multiple width quantum well (MWQW) material. For colliding pulse mode-locked laser, pulse width shortening of around 9.2% is obtained for the MWQW device in comparison to the IWQW device.