1550 nm InGaAs/InAlGaAs多宽度量子阱锁模光谱增益展宽研究

M. Jain, M. McCulloch, N. Langford, A. C. Bryce, C. Ironside
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引用次数: 0

摘要

与传统的等宽度量子阱(IWQW)材料相比,我们使用多宽度量子阱(MWQW)材料将增益谱拓宽了约35%。对于碰撞脉冲锁模激光器,与IWQW器件相比,MWQW器件的脉冲宽度缩短了约9.2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of spectral gain broadening for mode-locking using InGaAs/InAlGaAs multiple width quantum wells at 1550 nm
Compared to conventional, identical width quantum well (IWQW) material, we have broadened the gain spectrum by around 35% using multiple width quantum well (MWQW) material. For colliding pulse mode-locked laser, pulse width shortening of around 9.2% is obtained for the MWQW device in comparison to the IWQW device.
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