用于选择性氧化波导器件的绝热锥形模变换器

G. Vawter
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引用次数: 0

摘要

近年来,一类新的半导体光子器件得到了广泛的应用。这些器件使用横向选择性氧化来创建高效、低阈值电流的边缘发射激光器,其中光波导和横向电流限制都是通过AlGaAs的横向选择性氧化来实现的。我们最近还探索了选择性氧化波导在低驱动电压高速光相位调制器和适合>40 Gb/s光调制的电吸收调制器中的应用。我们提出了一种用于埋氧化物波导器件的绝热锥形模式变换器的新概念。在这种新的转换器中,激光或调制器的光模式根据光的传播方向进行扩展或缩小,从而在氧化器件的很小(1.5 /spl倍/ 0.3 /spl μ m FWHM)模式尺寸和传统单模光纤的大(10 /spl μ m)模场直径之间有效地移动光。新设计通过改变选择性氧化波导台面的宽度和新颖的上台面(或肋骨)来实现这一目标,形成了婚礼蛋糕式的整体结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Adiabatic tapered mode converter for selectively-oxidized waveguide devices
In recent times a new class of semiconductor photonic device has gained popularity. These devices use lateral selective oxidation to create highly efficient, low-threshold-current edge-emitting lasers where both the optical waveguide and lateral current confinement are achieved by lateral selective oxidation of AlGaAs. We have also recently explored use of selective-oxidation waveguides for low-drive-voltage high-speed optical phase modulators and electroabsorption modulators suitable for >40 Gb/s optical modulation. We propose a new concept for an adiabatic tapered mode converter for buried-oxide waveguide devices. Within this new converter the optical mode of the laser or modulator is expanded or shrunk, depending on the direction of light travel, to move light efficiently between the very small (1.5 /spl times/ 0.3 /spl mu/m FWHM) mode size of the oxidized device and the large, 10 /spl mu/m, modal field diameter of conventional single-mode optical telecom fiber. The new design achieves this by variation of the width of a selectively-oxidized waveguide mesa and a novel upper mesa, or rib, forming a wedding-cake-type overall structure.
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