1200 nm highly strained GaInAs/GaAs surface emitting lasers

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-10 DOI:10.1109/LEOS.2002.1134032

F. Koyama, T. Miyamoto, M. Arai, T. Kondo

引用次数: 0

Abstract

Summary form only given. In this paper, we review our results on 1.2 /spl mu/m GaInAs/GaAs VCSELs including their temperature lasing characteristics and wavelength engineering on patterned substrates.

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1200nm高应变GaInAs/GaAs表面发射激光器

只提供摘要形式。本文综述了1.2 /spl mu/m GaInAs/GaAs vcsel的研究成果，包括其温度激光特性和在图案衬底上的波长工程。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society

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