Continuous wave operation of MOCVD grown 1.55 /spl mu/m buried tunnel junction VCSELs

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Pub Date : 2002-11-10 DOI:10.1109/LEOS.2002.1159495

H. Song, O. Kwon, W. Han, Y. Ju, J. Kim, J. Shin, B. Yoo

引用次数: 3

Abstract

We demonstrate continuous wave operation of MOCVD-grown 1.55 /spl mu/m buried tunnel junction VCSELs at room temperature. This buried tunnel junction VCSEL structure is prepared by MOCVD twofold epitaxial growth. The threshold current and emission wavelength for a 10 /spl mu/m-diameter device are 3.5 mA and 1552 nm, respectively.

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MOCVD连续波运行生长1.55 /spl亩/m埋地隧道结VCSELs

我们在室温下演示了mocvd生长的1.55 /spl mu/m埋地隧道结vcsel的连续波运行。采用MOCVD双外延生长法制备了埋地隧道结VCSEL结构。10 /spl mu/m直径器件的阈值电流和发射波长分别为3.5 mA和1552 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society

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