H. Song, O. Kwon, W. Han, Y. Ju, J. Kim, J. Shin, B. Yoo
{"title":"MOCVD连续波运行生长1.55 /spl亩/m埋地隧道结VCSELs","authors":"H. Song, O. Kwon, W. Han, Y. Ju, J. Kim, J. Shin, B. Yoo","doi":"10.1109/LEOS.2002.1159495","DOIUrl":null,"url":null,"abstract":"We demonstrate continuous wave operation of MOCVD-grown 1.55 /spl mu/m buried tunnel junction VCSELs at room temperature. This buried tunnel junction VCSEL structure is prepared by MOCVD twofold epitaxial growth. The threshold current and emission wavelength for a 10 /spl mu/m-diameter device are 3.5 mA and 1552 nm, respectively.","PeriodicalId":423869,"journal":{"name":"The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Continuous wave operation of MOCVD grown 1.55 /spl mu/m buried tunnel junction VCSELs\",\"authors\":\"H. Song, O. Kwon, W. Han, Y. Ju, J. Kim, J. Shin, B. Yoo\",\"doi\":\"10.1109/LEOS.2002.1159495\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate continuous wave operation of MOCVD-grown 1.55 /spl mu/m buried tunnel junction VCSELs at room temperature. This buried tunnel junction VCSEL structure is prepared by MOCVD twofold epitaxial growth. The threshold current and emission wavelength for a 10 /spl mu/m-diameter device are 3.5 mA and 1552 nm, respectively.\",\"PeriodicalId\":423869,\"journal\":{\"name\":\"The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.2002.1159495\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2002.1159495","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We demonstrate continuous wave operation of MOCVD-grown 1.55 /spl mu/m buried tunnel junction VCSELs at room temperature. This buried tunnel junction VCSEL structure is prepared by MOCVD twofold epitaxial growth. The threshold current and emission wavelength for a 10 /spl mu/m-diameter device are 3.5 mA and 1552 nm, respectively.