2015 16th International Conference on Electronic Packaging Technology (ICEPT)最新文献

{"title":"In situ aging study on the variation of Sn0.7Cu/Cu solid interface marked by bubbles","authors":"Haoran Ma, Anil Kunwar, Junhao Sun, N. Zhao, Mingliang L. Huang, Haitao Ma","doi":"10.1109/ICEPT.2015.7236573","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236573","url":null,"abstract":"As the joint reliability of lead-free soldering is an important issue in electronic packaging industry, the research of interfacial bubbles is extremely imperative due to their close relationship with the quality of solder joints. In the process of solid state aging: the shape, size and location of bubbles will remain almost unchanged, subsequently allowing them to be used as markers during the procedure of our experiment. Based on this, the motion of Sn0.7Cu/Cu solid interface and the growth characteristics of the interfacial intermetallic compounds (IMCs) were in situ investigated in this study, using the scanning electron microscope (SEM) for the cross section each time after aging for a period of time at 150°C from 0h to 500h in oil (the soldering reaction part was carried out in furnace with the soldering temperature of 250°C and holding time of 60s, followed by water cooling). It was found that the solid interface would move towards the direction of copper substrate relative to the reference bubble, with its speed declining as the time passes. As the average composition of IMC layer in the normal area far from the bubble had an overall approach to the stable final substances Cu6Sn5 and Cu3Sn, the moving phenomenon can be explained by the transformation on the IMC/Cu interface including a volume change. On the other hand, the outline of the interfacial grains would initially have distinct appearance. On the perfect Cu6Sn5/Cu interface, a layer of Cu3Sn appeared at the beginning of the aging procedure, and its growth orientation was obviously inclined outward and perpendicular to the cross-section surface, and in contrary to this, the region under the bubble didn't generate a Cu3Sn layer. An increase in volume during a chemical reaction would produce some form of deformations through compressive stress, whereas, a decrease in volume would create a tensile stress which will eventually cause some flaws and voids on the reaction interface; maybe these two different forms of transformation can be distinguished by experimental microcosmic observation in situ or from calculation of the scope of the correlation between mole volume and temperature for specified materials. At 150°C the diffusion rate of copper in Cu6Sn5 layer is larger than that in Cu3Sn layer as put forward by some researchers, and, thus, the existence of the intermediate Cu3Sn layer will block the spreading of copper. Most probably, the volume changes caused by the appearance of the new product layer and the special diffusion feature at the aging temperature can be the highlighted parameters for the phenomena mentioned above.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"185 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133096794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Intermittent operating life results for different control strategies","authors":"Yuan Chen, Bo Hou","doi":"10.1109/ICEPT.2015.7236837","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236837","url":null,"abstract":"Intermittent operating life test is an important method to characterize the lifetime and package reliability of power semiconductor devices. The control strategy is a very important feature of the intermittent operating life test. Intermittent operating life tests with identical start condition but different control strategies (temperature control strategy and time control strategy) have been performed, which have been conducted on specially assembled test equipment with ultimate control of all test parameters. The test results under these two different control strategies are analyzed and discussed. Failure analysis is also used, to understand the failure mechanisms induced by intermittent operating life tests. The changes of thermal resistance with intermittent life cycle number are compared under two control strategies. The results show, that time control strategy is more severe than temperature control strategy. The lifetime of power devices is longer under temperature control strategy. And the thermal resistance increases relatively larger by time control strategy.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122532214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and fabrication of suspended high Q MIM capacitors by wafer level packaging technology","authors":"Tao Zheng, M. Han, Gaowei Xu, L. Luo","doi":"10.1109/ICEPT.2015.7236551","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236551","url":null,"abstract":"A novel silicon-based suspended MIM capacitor fabrication technique combining thin-film and bulk silicon etching technologies with high-quality factor is presented. The influence of low resistive silicon on the parasitics of integrated capacitors is analyzed by EM simulation. The suspended structure is achieved and optimized by a two-step back-etching process. The Q factor of the 3.3 pF suspended MIM capacitor at 2 GHz is about 79% larger than the non-suspended one and the Qmax is increased from 46.8 to 61.9, respectively. And a ten-element π equivalent model including electrode and substrate parasitics as well as dielectric loss is used to fit the suspended MIM capacitors well up to 10 GHz, demonstrating that the suspended MIM capacitors exhibit both lower substrate loss and lower parasitic capacitance of the substrate.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129141247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Package on Package SMT rework technology","authors":"W. Yuchuan, Chen Qiang","doi":"10.1109/ICEPT.2015.7236548","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236548","url":null,"abstract":"While already in widespread use in the consumer market for handheld, portable electronics, package on package (PoP) continues to gain in popularity, and seems likely to be implemented in other types of electronic assemblies. In order to improve the SMT rework yield for PoP devices, rework process and reliability study was undertaken. The first goal of this study was to establish the process guideline for PoP SMT rework. The second goal of this study was to assess the reliability of reworked package.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117165163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical modeling of the influence of temperature and driving current on “smile” in high power diode laser arrays","authors":"Shuna Wang, Pu Zhang, Zhiqiang Nie, Dihai Wu, Xingsheng Liu","doi":"10.1109/ICEPT.2015.7236552","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236552","url":null,"abstract":"“Smile” in high power diode laser arrays is mainly caused by thermal stress generated during packaging processes and operation. By numerical modeling, a three-dimensional finite element model of a conduction-cooled packaged 60W high power diode laser array was established. Finite element method (FEM) was conducted to simulate and analyze the thermal and mechanical characteristic of the diode laser bar in different scenarios. According to the variation of thermal stress and displacement across the laser bar, the influence of temperature and driving current on “smile” was analyzed and discussed. Numerical simulation results show that “smile” will decrease with the increasing heatsink temperature and increase with the increasing driving current. In this paper, the corresponding quantitative relationships of smile with heatsink temperature and driving current were obtained. The work provides theoretical guidance for optimizing high power diode laser array design, packaging process and reducing “smile”.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115603172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silver dendrite-based nanocomposites for current cutting-off fuse","authors":"R. Yang, Cheng Yang, Xiaoya Cui, Zhexu Zhang","doi":"10.1109/ICEPT.2015.7236627","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236627","url":null,"abstract":"Microelectronics and micromechanical systems (MEMS) are gaining popularity by virtue of small size, high integration, diverse functionalities, mass production and low cost. However, the existing current cutting-off fuse components can hardly be used in a microelectronics or micromechanical system to realize circuit protection due to their large size and high fusing current. Herein we report a novel current cutting-off fuse component based on printed electrically conductive nanocomposites (ECCs), which are composed of silver microdendrites with fractal morphology as the fusible conductive fillers and the thermosetting resin matrix. The silver paste was pasted between two copper electrodes with controlled space. The current cutting-off performance of the fuses was investigated within different silver fillers, various paste sizes, and diverse electrode spaces. The results show that, the silver dendrite-based paste can be fused at a relative low current due to its abundant nano-sized rims at the edge of the dendrite branches. Furthermore, the minimum fusing current (530 mA) was achieved when the silver flake-based paste was dispensed between two electrodes with distance of 100 μm and width of 30 μm. It is obvious that the fusing current attenuates gradually with the increase of space between two copper electrodes, and the silver paste in large spot size possesses higher fusing current than in small one. The scanning electron microscopy (SEM) analyses suggest that the silver fillers go through the melting and shrinking stages during the fusing process, thus the adjacent silver fillers separate to break the circuit. Considering the low material cost and negligible environmental risk, this novel current cutting-off fuse can provide cost-effective and environmental-friendly protection for MEMS devices.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115738322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An improvement of membrane structure of MEMS piezoresistive pressure sensor","authors":"Zebang Huang, Xiaosong Ma","doi":"10.1109/ICEPT.2015.7236789","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236789","url":null,"abstract":"This paper describes an improvement of the membrane structure of MEMS piezoresistive(PZR) pressure sensor. Finite element method (FEM) is applied to design and optimize the property of PZR the membrane structure and piezoresistors stress analysis is performed under the rated pressure. An equation that transfers the simulation stress data into output voltage is proposed in this paper according to the Wheatstone bridge principle and piezoresisitive effect in silicon. In order to achieve better sensor performance, several kinds of output voltage curve of the membrane structure were contrasted to obtain a suitable membrane structure. The design parameters of the pressure sensor include membrane size and shape and the location of piezoresistance. After that the pressure-output characteristic, the nonlinear error of the optimization sensor and the mechanical stability were analyzed. The results confirmed that the optimization structure has good sensitivity and linearity. It is a kind of high stability, high sensitivity, and low linear error of MEMS PZR pressure sensor.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114310824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of enhanced plastic ball grid array (EPBGA) package with heat spreader of copper plane","authors":"Jing Jiang, Guanhua Li, Zhongbao Yang, Peng Ding","doi":"10.1109/ICEPT.2015.7236534","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236534","url":null,"abstract":"Finite element models of heat spreader enhanced plastic ball grid array (EPBGA) packages with different structures, materials and process treatments had been developed in this study. Predicted result indicated that the difference of stress were not significant generated in the structures with single-layer and double-layer spreader respectively. The stress became smaller gradually with the increasing of glue thickness. Moreover, the encapsulation material of CV5420 brought less stress for package than FP4654. The result of reliability test revealed that product using the spreader dealt with ENEPIG all failed after reflowed three times, which had the worst reliability. Plasma proved beneficial to the reliability of package. The performance of 2200 was better than that of 2100A and 2300. Finally, the optimal structure design and material collocation were achieved for the EPBGA package.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114346747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lifetime evaluation on mid-infrared solid state laser","authors":"Lu Guo-guang, Hao Ming-ming","doi":"10.1109/ICEPT.2015.7236535","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236535","url":null,"abstract":"In this paper, 3-5μm solid state laser aging equipment was set up, according to the actual aging test result, we confirmed that the 3-5μm laser module (optical parametric oscillator) was the weakness part for the lifetime of the solid-state laser. Three groups of aging tests which the pumping power for the optical parametric oscillator was the accelerated stress were conducted on 3-5μm solid state lasers, according to the aging data analysis result, we can not only obtain the exponential degradation model of the optical parametric oscillator, but also we can obtain the accelerated model, and using these models we can quantitive evaluate the lifetime of the mid-infrared solid-state laser.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114428932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of CeO2 particles on the high phosphorus electroless Ni layer","authors":"Z. Zhen, A. Rong, Zhou Wei, Zhou Shuya, Wang Chunqing","doi":"10.1109/ICEPT.2015.7236630","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236630","url":null,"abstract":"Electroless Ni (EN) technology is widely used in electronic package field and the high phosphorus composite EN technology was studied. In this paper, we discussed the influence of nano-CeO2 and micro-CeO2 particles with different amounts when they were added in high phosphorus content Ni-P composite coating. The microstructure and crystal structure of the coating were observed by scanning electron microscope (SEM) and X-ray diffraction analysis (XRD) respectively. The results showed that whether nano-CeO2 or micro-CeO2, both refined the grain, increased the specific surface area, however the micro-CeO2 particles made more obvious effect. As the XRD result showed, the peak gradually become gentle, the coating turned into amorphous which may cause by the CeO2 particles absorbed in the grain boundary and crystal defects. The results indicated the CeO2 deposited with the coating very well. Finally, the corrosion resistance of the coating was tested with the method of electrochemical impedance (EIS) and linear polarization. The results were unified. When the dosage is 5g/L, the corrosion resistance was the best. However, lower corrosion resistance was got when excessive CeO2 particles were added which may affect by the catalytic property.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127118144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}