2015 16th International Conference on Electronic Packaging Technology (ICEPT)最新文献_第7页

On-line measurement and analysis of high-power LED characters in accelerated life test 大功率LED加速寿命试验特性在线测量与分析

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236792

Lin Zhou, Wen-Peng Xiao, Wenlong Yuan, Ming-Gao Cao, Rong Liang, Yi-Min Hu, Yan Liu, Hailin Wu

引用次数: 1

Analysis on the causes of decline of MLCC insulation resistance MLCC绝缘电阻下降原因分析

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236807

Wei Jiang, Yongda Hu, S. Bao, Song Lijie, Zheng Yuwei, Yongqiang Cui, Li Qiang

引用次数: 3

Study of fine pitch copper pillar solder joint on HDI flexible substrate for wearable devices 可穿戴器件HDI柔性基板上细间距铜柱焊点的研究

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236820

K. Pun, Amandeep Singh, M. Islam, Chan Mei Shan

{"title":"Study of fine pitch copper pillar solder joint on HDI flexible substrate for wearable devices","authors":"K. Pun, Amandeep Singh, M. Islam, Chan Mei Shan","doi":"10.1109/ICEPT.2015.7236820","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236820","url":null,"abstract":"In the trend of miniaturization, low cost, and high performance of electronic packages, high density flip chip interconnect has been required to interface with very fine pitch chips like signal processors and multiple thin dies package, this raise a great challenge to related interconnect technology in electronic packaging for high density, small feature size, and high performance. With technological development like flip-chip thermal compression bonding (TCB), interconnects have been reduced to considerable fine pitch, but traditional diffusion bonding method likes Au-Au and Au-Sn has a disadvantage of high cost and reduced throughput for multiple die package. Contrary to this Cu pillar solder reflow have been providing an excellent throughput at reasonably low cost, but they do have pitch limitations which is normally greater than 100 11m. This paper is targeted at resolving the challenges in conjunction with the advantages of Cu pillar reflow technologies and prepare a low cost solution for fabricating module which required for multiple die and fine pitch interconnects. Study was done on flexible substrate made of 25 μm PI tape with different layer count up to 4 metal layers. The Cu pillar bump pitch was kept at 80 11m with Cu pillar height of 10-13μm and solder cap of 12-15μm (very low profile for standard reflow). Variations in substrate surface finish, pad sizes, substrate flatness were investigated thoroughly. In final, the substrate flatness is identified to be the key contributor to prevent the open solders, and the OSP is found to be the most suitable candidate to ensure good solder joint integrity, this offers a great solutions for high volume production in Compass and provides an insight to designer for upcoming production of wearable devices.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128147001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Study on high thermal conductivity and thick-thin film hybrid technology of AlN substrate AlN衬底高导热及厚薄膜杂化技术研究

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236782

Huanbei Chen, Qiushi Liang

引用次数: 0

A new method of robust phosphor glass fabrication and performances for LEDs 一种用于led的坚固荧光粉玻璃制造及其性能的新方法

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236808

Liang Yang, An Xie, Dan Xie, Xiayun Shu

引用次数: 0

The optimization of process parameters based on the orthogonal experiments in wire bonding 基于正交试验的线键合工艺参数优化

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236790

Lijie Song, S. Bao, Yongda Hu, Wei Jiang, Qiang Li

{"title":"The optimization of process parameters based on the orthogonal experiments in wire bonding","authors":"Lijie Song, S. Bao, Yongda Hu, Wei Jiang, Qiang Li","doi":"10.1109/ICEPT.2015.7236790","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236790","url":null,"abstract":"Regarding the effects caused by power and time of 7476D semi-automatic bonding wire on surface of ceramic substrate wedge bonding wire performances. Orthogonal experiment named L9(34) had been designed using bonding power and bonding time to get results of pull test as the test index. After processing and analysis of test data using Statistical Package for Social Science 16.0 (SPSS16.0) software, influence degree of different factors is obtained, and the optimal technological conditions of bonding wire is obtained too, which can be further provided for the problems, causes and quality assessment of wire bonding analysis' data support. From the analysis results, influence degree of different factors is obtained, and the optimum formula for bonding wire is obtained too. Bonding output power of the first bond is the key factor that affects the results of pull test. The optimal technological conditions are obtained as follows: The influence degree of each factor is not the same: A>D>B>C; the output power of the first bond is 0.32 watt; the output power of the first bond is 0.44 watt; bonding time of the first is bond 70 millisecond; bonding time of the second bond is 100 millisecond. Development of this work is of benefit to raising quality of gold wire wedge bonding. Through the above analysis, aiming at the problem of multiple factors and multiple levels, we can use the method of orthogonal test to solve test index, so not only reduced the number of test, and obtained the optimum formula.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122481033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A rectangular coaxial line low-pass filter with simple structure 一种结构简单的矩形同轴线低通滤波器

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236692

Xi Tian, Yu-zhu Wang, Tianyiyi He

引用次数: 2

Simulation analysis of the fine pitch micro-bump formation with solder injection method 细间距微凸点的喷焊成形仿真分析

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236546

Hongwen He, Daquan Yu, Tingyu Lin, Liqiang Cao

{"title":"Simulation analysis of the fine pitch micro-bump formation with solder injection method","authors":"Hongwen He, Daquan Yu, Tingyu Lin, Liqiang Cao","doi":"10.1109/ICEPT.2015.7236546","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236546","url":null,"abstract":"In this paper, a new micro-bump formation process was investigated by simulation method. In detail, a solder filling fixture was fabricated to hold the solder paste or alloy over the photoresist openings. As the fixture moves along the wafer surface, the solder paste or alloy was heated up to liquid status to fill in the photoresist openings under pressure force and vacuum circumstance. Then cooled down the temperature and solidified the molten solder to form the desired bumps. Before conduct the new bumping formation process, simulation work should be done to evaluate the process practicability and validation. Emphasis was placed on the simulation process construction to demonstrate the feasibility of the new bumping technology. Different influencing factors that may affect the bumping quality were studied such as the wall thickness of the filling fixture, gap between the wafer and the filling fixture, filling pressure, movement velocity of the filling fixture, and so on. In conclusion, an optimal filling parameter was obtained based on the simulation result. Future work will concentrate on the filling tests to verify the simulation results.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131347817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Numerical simulation of heat transfer cooling down by water in microgap structure 微间隙结构中水冷却传热的数值模拟

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236776

Jiancheng Shen, Z. Wen, Jinsong Zhang

{"title":"Numerical simulation of heat transfer cooling down by water in microgap structure","authors":"Jiancheng Shen, Z. Wen, Jinsong Zhang","doi":"10.1109/ICEPT.2015.7236776","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236776","url":null,"abstract":"With the increase of power density in chip, the electronic products have to face the challenge of heat dissipation technology. For the heat transfer of microgap, the fluid flows through the pathway which has a large ratio between the width and depth in the cross-section and a small ratio between the length and width in the top view. The rectangular microgap was built before modeling and Fluent software was applied to simulate and analyze the temperature field. The input heat flux was 8.3 × 104 w/m2, the water flow rate was 0.32 m/s, and the inlet water temperature was 300 K. Some conclusions had been drawn as following. The temperature distribution was symmetrical to the Z axis. The temperature gradient took a radial pattern from the model center to edges. The isotherm in microgap had a “U” shape, which indicated that the water flowing in center had a better capability for heat transfer. The isotherms presented the regular onion shape of wall temperature while the microgap depth varied from 0.05 mm to 0.7 mm. Each isotherm onion diagram had a tip at the right and a bottom at the left to correspond with the water flowing path from inlet to outlet. The center of wall had been cooled down more efficiently and the low temperature region was distributed along the water flowing path. When the depth increases to be 0.9 mm and 1.1 mm, the isotherm curves were so flat that the onion shape had been disappeared. This could be contributed to the large microgap depth reduce the water flow rate. The wall temperature curve had an ascending fluctuation with the increasing of microgap depth.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125521124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Lift-off photoresists for advanced IC packaging metal paternning 用于高级集成电路封装金属刻模的剥离光刻胶

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236829

Hirokazu Ito, K. Hasegawa, T. Matsuki, S. Kusumoto

{"title":"Lift-off photoresists for advanced IC packaging metal paternning","authors":"Hirokazu Ito, K. Hasegawa, T. Matsuki, S. Kusumoto","doi":"10.1109/ICEPT.2015.7236829","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236829","url":null,"abstract":"3D-TSV, 2.5D interposer, PoP and Flip-Chip wafer micro-bumping are being implemented for consumer electronic products such as mobile phones, tablets, and so on. The consumer product market trends toward smaller and thinner, and cause the IC packaging becoming more complexity. The lift-off method of the photoresist for IC packaging metal patterning has been widely used in the variety of electronic device fabrication processes such as MEMS, and LED manufacturing. The big advantages of using lift-off method are the cost saving and the process simplification. However there is a challenge that the morphology of the deposited metal pattern is difficult to be controlled. In order to achieve desired metal patterning, there are two types of novel lift-off photoresist were developed which are single-layer negative tone photoresist and double-layer positive tone photoresist. Both the photoresists show unique and well-controlled “undercut” profile which enables to form a targeted metal configuration after exposure, development and stripping process. This paper reports the key parameter of photoresist and shows how to control the undercut profile.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132912842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1