Study of fine pitch copper pillar solder joint on HDI flexible substrate for wearable devices

K. Pun, Amandeep Singh, M. Islam, Chan Mei Shan
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引用次数: 1

Abstract

In the trend of miniaturization, low cost, and high performance of electronic packages, high density flip chip interconnect has been required to interface with very fine pitch chips like signal processors and multiple thin dies package, this raise a great challenge to related interconnect technology in electronic packaging for high density, small feature size, and high performance. With technological development like flip-chip thermal compression bonding (TCB), interconnects have been reduced to considerable fine pitch, but traditional diffusion bonding method likes Au-Au and Au-Sn has a disadvantage of high cost and reduced throughput for multiple die package. Contrary to this Cu pillar solder reflow have been providing an excellent throughput at reasonably low cost, but they do have pitch limitations which is normally greater than 100 11m. This paper is targeted at resolving the challenges in conjunction with the advantages of Cu pillar reflow technologies and prepare a low cost solution for fabricating module which required for multiple die and fine pitch interconnects. Study was done on flexible substrate made of 25 μm PI tape with different layer count up to 4 metal layers. The Cu pillar bump pitch was kept at 80 11m with Cu pillar height of 10-13μm and solder cap of 12-15μm (very low profile for standard reflow). Variations in substrate surface finish, pad sizes, substrate flatness were investigated thoroughly. In final, the substrate flatness is identified to be the key contributor to prevent the open solders, and the OSP is found to be the most suitable candidate to ensure good solder joint integrity, this offers a great solutions for high volume production in Compass and provides an insight to designer for upcoming production of wearable devices.
可穿戴器件HDI柔性基板上细间距铜柱焊点的研究
在电子封装小型化、低成本、高性能的趋势下,高密度倒装互连需要与信号处理器等极细间距芯片和多薄芯片封装相连接,这对电子封装中高密度、小特征尺寸、高性能的相关互连技术提出了巨大的挑战。随着倒装芯片热压缩键合(TCB)等技术的发展,互连已经缩小到相当小的间距,但传统的扩散键合方法如Au-Au和Au-Sn具有成本高和多芯片封装吞吐量降低的缺点。与此相反,铜柱焊料回流已经以相当低的成本提供了出色的吞吐量,但它们确实有间距限制,通常大于100 11m。本文旨在结合铜柱回流技术的优势,解决这些挑战,并为制造需要多个模具和细间距互连的模块准备低成本的解决方案。研究了25 μm PI带的柔性衬底,不同的层数最多可达4层金属层。铜柱凸距保持在80 - 11m,铜柱高度为10-13μm,焊帽为12-15μm(标准回流非常低轮廓)。对衬底表面光洁度、衬垫尺寸、衬底平整度的变化进行了深入的研究。最后,基板平整度被认为是防止开放焊点的关键因素,而OSP被认为是确保良好焊点完整性的最合适的候选材料,这为Compass的大批量生产提供了一个很好的解决方案,并为即将生产的可穿戴设备的设计师提供了见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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