AlN衬底高导热及厚薄膜杂化技术研究

Huanbei Chen, Qiushi Liang
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引用次数: 0

摘要

随着电子器件小型化、高功率化、高频率化的趋势,对衬底的散热性能、布线密度和损耗提出了更高的要求。厚膜电路和薄膜电路分别在精细布线和多层布线上有其局限性,难以同时满足这些要求。本研究研究了具有高导热、多层布线和细布线特性的厚薄膜杂化AlN衬底。通过优化制备工艺,将AlN衬底的导热系数提高到190 W/mK,能有效满足冷却要求。为了满足高密度布线和低损耗的要求,引入了厚薄膜混合技术。该基板可用于大功率收发模块、高速光收发模块等领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study on high thermal conductivity and thick-thin film hybrid technology of AlN substrate
With the trend of miniaturization high power and frequency of electronic devices, the higher performances of cooling, wiring density and lower loss for substrate have been required. Thick Film Circuits and Thin Film Circuits have their limitations on fine wiring and multilayer wiring respectively, which are difficult to simultaneously meet these requirements. In this study, thick-thin film hybrid AlN substrate with properties of high thermal conductivity, multilayer wiring and fine wiring has been researched. The thermal conductivity of AlN substrate has been improved to 190 W/mK by optimizing the preparation and it can content with the cooling requirements effectively. Thick-thin film hybrid technology is induced to meet high density wiring and lower loss. This kind of substrate can be used to High- Power T/R Module, High Speed Optical Transceiver Module and other fields.
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