2015 16th International Conference on Electronic Packaging Technology (ICEPT)最新文献_第8页

Study of highly accelerated thermal cycling test for DC/DC converter DC/DC变换器高加速热循环试验研究

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236765

Yao Bin, Chen Hui, Xia Qingzhong, L. Xiaowei

{"title":"Study of highly accelerated thermal cycling test for DC/DC converter","authors":"Yao Bin, Chen Hui, Xia Qingzhong, L. Xiaowei","doi":"10.1109/ICEPT.2015.7236765","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236765","url":null,"abstract":"DC/DC converter often undergoes the severest thermal stress and most likely to be damaged. The purpose of the paper is to introduce the method of highly accelerated thermal cycling test for DC/DC converter. Firstly, in order to identify the operating limits and failure of DC/DC converters, an on-line monitoring system was established for some key parameters monitoring, such as output voltage, input current and efficiency. Low temperature limits test and high temperature limits test were performed at first. The temperature was decremented and incremented until the device under test failed or the chamber maximum temperature was reached. The low and high temperature operating limits were obtained and failure mechanisms were identified. Based on the results of low and high temperature limits test, the profile of highly accelerated thermal cycling test was designed, and then the test was performed. The failure modes during highly accelerated thermal cycling test was burn-out of MOSFET. We also investigated the failure mechanisms and found the root causes by using some conventional methods of failure analysis such as optical inspection and SEM&EDS analysis. The burn-out of MOSFET is mainly driven by the degradation of heat dissipation performance. The root cause is the degradation of bond performance between the chip and solder, which was due to solder creep and re-melting under the influence of accelerated thermal cycling stress. The solder crack which would affect the reliability was also found. Finally, for reliability improvement, several suggestions were given.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134283549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

The analysis of heat pipe cooling in high power LED lighting system 大功率LED照明系统热管散热分析

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236631

Jingan Zheng, Dasong Ge, Junhui Li

引用次数: 3

Imitation chip design based on TSV 2.5D package 基于TSV 2.5D封装的仿真芯片设计

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236557

Gao Nayan, Cao Yuyuan, Zhu Yuan, Ming Xue-fei

引用次数: 1

Copper pumping of through silicon vias in reliability test 硅通孔铜泵送可靠性试验

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236655

X. Jing, Z. Niu, H. Hao, Wenqi Zhang, U. Lee

引用次数: 1

P(St-AA)/Ag nano-composite particles as electrical conductive filler for conductive ink in printed electronics P(St-AA)/Ag纳米复合颗粒在印刷电子导电油墨中的导电填料

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236593

Yougen Hu, Pengli Zhu, T. Zhao, Xianwen Liang, R. Sun, C. Wong

{"title":"P(St-AA)/Ag nano-composite particles as electrical conductive filler for conductive ink in printed electronics","authors":"Yougen Hu, Pengli Zhu, T. Zhao, Xianwen Liang, R. Sun, C. Wong","doi":"10.1109/ICEPT.2015.7236593","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236593","url":null,"abstract":"In this study, Ag nanoparticles were anchored onto the surfaces of monodisperse sub-micron sized P(styrene-co-acrylic acid) (P(St-AA)) spheres via a simple modified electroless deposition to obtain core-shell structural P(St-AA)/Ag nano-composite particles, and used as electrical conductive filler for conductive ink. The synthetic conditions of the P(St-AA)/Ag nano-composite particles were studied, and the morphology, structure and thermal properties of the as-prepared particles were investigated. The results show that the silver particles were successfully completely coated on the surface of the polymer cores with a mono sized about 350 nm, and the size of the silver particles is between 20 nm and 80 nm. Conductive patterns were fabricated by silk-screen printing onto the flexible polyimide (PI) substrate using the P(St-AA)/Ag nano-composite particles as conductive fillers. A circular and orderly conductive silver interconnection network was obtained after the pattern was subjected a heat treatment at 150 °C for 120 min, and the resistivity of the pattern is 24.5 μΩ·cm. These metal coated polymer spheres are promising electrical conductive filler in a variety of electronic applications.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124983392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliability analysis and thermal resistance degradation of high power chip under harsh environment 恶劣环境下大功率芯片的可靠性分析及热阻退化

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236781

W. Tian, Haoyue Ji

{"title":"Reliability analysis and thermal resistance degradation of high power chip under harsh environment","authors":"W. Tian, Haoyue Ji","doi":"10.1109/ICEPT.2015.7236781","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236781","url":null,"abstract":"Heat dissipation of high power devices has always aroused great concern both domestic and overseas. But thermal resistance degradation, the key factor of heat dissipation in chip bonding solder layer, is studied by few people. The establishment of high-power device model is based on the physical model. When voids appear in the center/corner of the solder layer, the influence of void rate on solder layer reliability, crack growth rate and thermal degradation are analyzed under harsh condition of -55°C~175°C temperature cycle. The study shows: when voids occur in welding layer, the reliability of welding layer decreases from the normal value 5439Cycles. The welding layer with center void will reduce to 1122Cycles, while the welding layer with corner will reduce to 2221Cycles; the crack growth rate increases with the void rate. The crack growth rate with center voids increases more softly, the maximum can reach 2.385×10-4mm/cycle. The crack growth rate with corner voids increases much more sharply, the maximum can reach 2.739×10-4mm/cycle; thermal degradation of center void and corner void are basically same, but maximum of center void can reach 1.12×10-6K/(W·cycle), while for the corner void, the maximum can reach 4.84×10-7K/(W·cycle).","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125244699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of heatsink on the performance of high power semiconductor lasers 热沉对大功率半导体激光器性能的影响

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236747

Liming He, Chuzhong Zhao, Wenbin Liu, Shujuan Wu, B. Qiu, M. Hu, Yan Liu

引用次数: 3

Geometric size effects on the elements consuming at the solder pad under current stressing 几何尺寸对电流应力下焊盘处元素消耗的影响

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236778

Hao Zhang, F. Sun, Xuemei Li, Yang Liu, Tong Xin

{"title":"Geometric size effects on the elements consuming at the solder pad under current stressing","authors":"Hao Zhang, F. Sun, Xuemei Li, Yang Liu, Tong Xin","doi":"10.1109/ICEPT.2015.7236778","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236778","url":null,"abstract":"This paper investigated the geometric size effects on elements consuming at the solder pad under current stressing. The micro solder joints Cu/Sn-3.0Ag-0.5Cu(SAC305)/Cu with same volume and different heights (H1=300μm, H2=420μm and H3=520μm) were made for the electromigration test. The results indicated that the consumption of copper element at the solder pad increased with the increase of the height of the solder joints after reflow. In the electro-thermal aging test, the consumption of copper element at the cathode solder pad increased linearly with the increase of stressing time, and the average consumption rate increased with the increase of the height of the solder joints. It is suggested that the solder joints with a higher bump height had a lower dispersion of current density, which resulted in a higher current density in the migration routine of the metal atoms. Current density is the dominant driving force in the process of the electromigration. However, the consumption of copper element at the anode solder pad increased linearly with the increase of the square root of stressing time, and the average consumption rate has the same law with that at the cathode. The numerical simulation was also conducted under the same stressing conditions as the experimental tests. The results revealed that the solder joint with a higher bump height had a lager internal current density, which is consistent with the experimental results.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125927074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of flux components on the slump-in-heating resistance of Sn-3.0Ag-0.5Cu solder paste 助焊剂组分对Sn-3.0Ag-0.5Cu锡膏耐热坍落性的影响

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236653

Cheng Zhang, Xiaoyan Xu, Jian Zhou, F. Xue

引用次数: 1

Miniaturised microstrip lowpass filter with wide stopband 微型化宽阻带微带低通滤波器

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI: 10.1109/ICEPT.2015.7236830

H. Xin, Honglun Yang

引用次数: 0