Xinyu Wang, Jian Cai, Yu Chen, Cheng Li, Xi He, Shuidi Wang
{"title":"Development of fine line build-up organic substrate using thin film RDL technology","authors":"Xinyu Wang, Jian Cai, Yu Chen, Cheng Li, Xi He, Shuidi Wang","doi":"10.1109/ICEPT.2015.7236638","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236638","url":null,"abstract":"As a low cost solution to realize a fine line structure for high density chip interconnection, the thin film organic substrate that adopted the same concept as flip chip RDL (redistribution layers) technology has been developed in this study. The coarse line of a conventional substrate could be refined to a much finer distribution through the application of a thin film process. The thin film layers had been deposited on both sides of a 4-inch diameter BT substrate by Cu sputtering and electroplating. The dielectric material, was built-up by spin coating process. Daisy chain testing circuit has been designed to evaluate the bonding performance between the dummy die and the thin film substrate. The fine line trace with the 5μm/5μm line/space was electroplated on the top layer. A 7mm×7mm dummy die was then flip chip bonded to the thin film substrate with a unit size of 10mm×10mm. The resistance of the wiring traces was tested to make sure that the interconnection between the chip and the interposer is good. The result was similar to the theoretical value, indicating that the structure of interconnection was successful.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129818981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xue-ling Jing, Zhao-Jun Zhu, Yu-zhu Wang, Yang Peng
{"title":"A new kind of circular polarized slotted waveguide array antenna","authors":"Xue-ling Jing, Zhao-Jun Zhu, Yu-zhu Wang, Yang Peng","doi":"10.1109/ICEPT.2015.7236835","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236835","url":null,"abstract":"We present a new waveguide slot configuration able to radiate a circular polarization with a very low axial ratio. This configuration is mainly intended as a circularly polarized element to be used in an array. Both left-hand and right-hand circular polarization can be independently obtained and therefore this configuration could be used to realize a polarization agile antenna. The design approach is based on the analysis and optimization of the aperture fields of one radiation unit cell in order to produce good performance of circular polarization. An array of eight elements with uniform spacing is realized in Ka-band with a gain of 10.67 dB. The grating lobes arising due to large inter element spacing are suppressed by loading the waveguide with dielectric. And the relative AR bandwidth is about 9.2%.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126404120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wenbin Liu, Taishan Wang, Chengpeng Li, Hong Xia, M. Hu, Yan Liu
{"title":"Lifetest system for assessing reliability of high-power semiconductor laser diodes","authors":"Wenbin Liu, Taishan Wang, Chengpeng Li, Hong Xia, M. Hu, Yan Liu","doi":"10.1109/ICEPT.2015.7236748","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236748","url":null,"abstract":"High power semiconductor laser diodes are widely used for fiber laser pumping, solid-state laser pumping, materials processing, cosmetic treatment, laser display, solid-state lighting and military applications. Existing and emerging applications push the technology of high-power semiconductor laser diodes to even wider range of wavelengths, higher power and brightness, lower cost of manufacturing and the most importantly, the improvement of reliability. However, the reliability assessment of multiple high-power laser diodes has been difficult and costly due to the high current, high-density heat flux, high optical intensity and the possibility of contamination in a long-term lifetest. The lack of high-performance lifetest systems has hindered the progress of high power laser diodes. In this paper, we report the design and implementation of a high-performance system for reliability testing of high-power semiconductor laser diodes. This system is capable of simultaneously aging 80 single-emitter diodes each outputting 10-20W optical power with the in-situ optical power and optical wavelength monitoring. The handling capacities are as high as 2KW and 4KW, respectively for optical power and heat dissipation. Many features are implemented to ensure correct and safe use of the system. Various temperature sensors are embedded inside the system to monitor the temperatures of the cooling water, the temperature of the air and the temperatures of the heat sinks. Flow rate of the cooling water is monitored and controlled. As required for long term lifetest, the system provides a class-100 clean environment and a controlled temperature for laser diodes under test. The system is used in multi-cell acceleration aging of high-power, high-brightness 9xxnm semiconductor laser diodes manufactured by Shenzhen Raybow Opto Inc.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"47 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121010988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jicheng Zhang, Yangjian Xu, L. Liang, Yuanxiang Zhang, Y. Liu
{"title":"The effect of micro-structure evolution in electromigration on the reliability of solder joints","authors":"Jicheng Zhang, Yangjian Xu, L. Liang, Yuanxiang Zhang, Y. Liu","doi":"10.1109/ICEPT.2015.7236729","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236729","url":null,"abstract":"Electromigration (EM) in solder joints has become a critical reliability issue with the development of electronic industry. This paper studied two different failure modes during EM testing: atom migration dominated failure and crack dominated failure. Experimental study on EM was carried out in a typical testing circuit subjected to different current and environment temperature. Here, two different environment temperatures in consideration of two current densities have been studied. Finally, some significant conclusions have derived, which are consistent with the other related studies and knowledge.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122819523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhipeng Chen, Wei-Xiong Luo, Ying Zhu, Ming Li, Liming Gao
{"title":"Potential-dependence of additives distribution in copper electrodeposition via filling","authors":"Zhipeng Chen, Wei-Xiong Luo, Ying Zhu, Ming Li, Liming Gao","doi":"10.1109/ICEPT.2015.7236569","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236569","url":null,"abstract":"Via filling by copper electrodeposition is of great interest for industry to realize 3D packaging and reduce cost. To achieve “bottom-up” filling with no voids and seams, numerous studies on additives mechanism have been conducted. The organic sulful-containing accelerator, bis(3-sulfopropyl) disulfide (SPS) and the inhibitor (e.g., poly(ethylene glycol) (PEG) ), are common additives in “bottom-up” filling of vias. This work investigates a straightforward method for “bottom-up” filling simulation of SPS-PEG additive system. In this method, the potential dependence of additives adsorption behavior was summarized and employed in further simulation. A model estimation method was applied to estimate the precision. This model was then utilized in Finite Element Method (FEM) simulation, and the results gave a glimpse of the defect formation in via filling.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123046301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hongyan Xu, Chunlei Wang, Libing Zheng, Huachao Fang, Ju Xu
{"title":"Interfacial microscopic reaction mechanism of lead-free attachment material in IGBT packaging","authors":"Hongyan Xu, Chunlei Wang, Libing Zheng, Huachao Fang, Ju Xu","doi":"10.1109/ICEPT.2015.7236861","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236861","url":null,"abstract":"The wettability and interfacial reaction thermodynamics and dynamics of novel rare-earth-containing lead-free solders in IGBT packaging were studied. Trace additions of rare-earth element have been shown to refine the microstructure and inhibit interface reaction rate, resulting in the interface layer thickness reduction, thus improving its mechanical properties. This paper investigated the effect of the addition of Ce on the wetting behavior, interfacial reaction thermodynamics and dynamics and microstructure of Sn3.0Ag0.5Cu (SAC305) alloy. Interfacial reaction thermodynamic and dynamic properties are studied by Kissinger method and DSC analysis. The effect of soldering layer defects on IGBT module heat dispersion was simulated and analyzed by ANSYS finite element method. Due to the joint voiding could increase the total thermo-mechanical stress, the addition of Ce into the SAC305 solder reduces the voiding and total thermal resistance, the joint mechanical properties and IGBT module life expectancy can be expected to be improved accordingly.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115935913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Embedding chip into substrates with cavities for hetergeneous integration","authors":"Ming-Ai Zhang, J. Shang, Long Chen","doi":"10.1109/ICEPT.2015.7236758","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236758","url":null,"abstract":"Technologies for the embedding of active and passive components into the multilayer substrate can effectively reduce the circuit length, improve the electrical performance and thermal properties through the designing of thermal path. It allows a large extent miniaturization of products' size and makes high density packaging enabled. In this paper, we embedded the organic interposer with flip-chip into the T-shaped cavity on the core substrate to form an embedded chip package structure. First of all, the thinned chip was flip-mounted on an organic interposer with solder bump, the interposer was fabricated with the circuit pattern as the lead-out module, and meanwhile a T-shaped cavity was machined on an organic core substrate by 355nm laser, which matches the shape of the interposer with chip. Then the interposer was placed in the T-cavity and the core substrate was covered with some prepreg layers. Next embedding chip into substrate was processed by a vacuum lamination machine. At last, laser drilling was used for blind via formation connecting to the pads on the interposer, and via metallization was implemented by vertical PTH and plating process. After the whole processes, thermal cycle test was performed. Results show that the embedded process was demonstrated successfully, and there were no cracks on the die and no voids in the embedded structure. Finally, the steady-state thermal analysis of the embedded substrate was taken to improve the thermal performance and optimum of the embedded substrate.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132561847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A new copper ink with low sintering temperature for flexible substrates","authors":"Yan Li, Tianke Qi, Yuanrong Cheng, F. Xiao","doi":"10.1109/ICEPT.2015.7236713","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236713","url":null,"abstract":"The metal organic decomposition ink, one of the frequently-used conductive ink, has attracted more and more attentions. However, a serious drawback of the metal organic decomposition inks is that the sintering temperature is too high for the fabrication of printed electronic devices on a flexible organic substrate, such as PET film. Thus, the metal decomposition ink with low sintering temperature below 200 °C is required. It has been reported that the octylamine can effectively reduce the decomposition temperature of copper formate for metal organic decomposition ink. In this paper, we present the development of a new copper ink, which is composed of copper formate and isopropanolamine. The ink can decompose at 120 °C under nitrogen and form a conductive film. The copper organic decomposition ink was characterized by UV, FTIR and TGA. Copper film was obtained by coating the ink onto the glass and PET substrate followed by sintering at a relatively low temperature. The copper film showed a low resistance of 32.3 μΩ·cm when sintered at 135 °C, measured with a four-point probe method. The structure of copper film was characterized by XRD which consisted of pure copper. SEM showed the differences in the morphology of the copper film at various temperature.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131561054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optimization and analysis of micro capacitive comb accelerometer","authors":"Junchao Wang, Xiaosong Ma","doi":"10.1109/ICEPT.2015.7236793","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236793","url":null,"abstract":"In this paper the design optimization of capacitive comb accelerometer is discussed. The accelerometer could sense acceleration in x direction which achieves this function implementing several flexible hinges suspending a proof-mass. The flexible hinges are used to enhance the sensitivity and the geometry parameters are optimized in this paper. A static, electrostatic simulation has been conducted. The COMSOL software is used to get the sensitivity and resonant frequency of the accelerometer, the solid mechanics module and electrostatic module are mainly used. The modal analysis simulation result shows that the resonant frequency of the accelerometer is 5240.8Hz. The sensitivity is 4.248mv/g. The total noise equivalent acceleration is 3.567μg/√Hz.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"242 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131087706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Stress analysis and parametric studies for a ultralow-k chip in the flip chip process","authors":"Lin Lin, Jun Wang, Lei Wang, Wenqi Zhang","doi":"10.1109/ICEPT.2015.7236679","DOIUrl":"https://doi.org/10.1109/ICEPT.2015.7236679","url":null,"abstract":"Using ultralow-k (ULK) materials as inter-layer dielectrics (ILD) and inter-metal dielectrics (IMD) in copper connections were implemented to meet the electrical performance requirements in the advanced chips. ULK materials become fragile because tiny pores and inclusions were introduced to reduce the dielectric constant (k). As a result, the mechanical failures in ULK materials are critical during packaging processes, such as solder reflow. In this study, the stress analysis and parametric study for a designed ULK chip under the flip chip reflow was performed by finite element method with sub-modeling technology. The microstructures on the surface of chip, including ULK materials, were homogenized to an effective thin layer and equivalent material properties were used in the global model analysis. The ULK/Cu structures under the corner joint that suffering higher stresses was analyzed by the sub-modeling method. The local model including M1 - M10 Cu/ULK connection and dielectric layers and the stresses can be achieved . Using the method, the effect of design parameters, e.g. PI opening, copper pillar diameter and Ni thickness, was examined by comparing the stress in the ultralow-k dielectric layers. The results reveal a decreased risk for a design with the smaller PI opening, larger copper pillar diameter and adding the Ni layer.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"7 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128718160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}