利用薄膜RDL技术开发细线构筑有机衬底

Xinyu Wang, Jian Cai, Yu Chen, Cheng Li, Xi He, Shuidi Wang
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引用次数: 0

摘要

作为实现高密度芯片互连的细线结构的低成本解决方案,本研究开发了与倒装芯片RDL(再分布层)技术概念相同的薄膜有机衬底。传统基板的粗线可以通过薄膜工艺的应用细化到更精细的分布。采用Cu溅射和电镀的方法在直径为4英寸的BT衬底两侧沉积了薄膜层。采用旋涂法制备了介质材料。设计了雏菊链测试电路,以评估假模与薄膜衬底之间的粘合性能。在顶层电镀出5μm/5μm线/间距的细线迹。然后将一个7mm×7mm假晶片倒装到单位尺寸为10mm×10mm的薄膜基板上。对布线的电阻进行了测试,以确保芯片与中间层之间的互连良好。结果与理论值相近,说明互连结构是成功的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of fine line build-up organic substrate using thin film RDL technology
As a low cost solution to realize a fine line structure for high density chip interconnection, the thin film organic substrate that adopted the same concept as flip chip RDL (redistribution layers) technology has been developed in this study. The coarse line of a conventional substrate could be refined to a much finer distribution through the application of a thin film process. The thin film layers had been deposited on both sides of a 4-inch diameter BT substrate by Cu sputtering and electroplating. The dielectric material, was built-up by spin coating process. Daisy chain testing circuit has been designed to evaluate the bonding performance between the dummy die and the thin film substrate. The fine line trace with the 5μm/5μm line/space was electroplated on the top layer. A 7mm×7mm dummy die was then flip chip bonded to the thin film substrate with a unit size of 10mm×10mm. The resistance of the wiring traces was tested to make sure that the interconnection between the chip and the interposer is good. The result was similar to the theoretical value, indicating that the structure of interconnection was successful.
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