Potential-dependence of additives distribution in copper electrodeposition via filling

Zhipeng Chen, Wei-Xiong Luo, Ying Zhu, Ming Li, Liming Gao
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引用次数: 2

Abstract

Via filling by copper electrodeposition is of great interest for industry to realize 3D packaging and reduce cost. To achieve “bottom-up” filling with no voids and seams, numerous studies on additives mechanism have been conducted. The organic sulful-containing accelerator, bis(3-sulfopropyl) disulfide (SPS) and the inhibitor (e.g., poly(ethylene glycol) (PEG) ), are common additives in “bottom-up” filling of vias. This work investigates a straightforward method for “bottom-up” filling simulation of SPS-PEG additive system. In this method, the potential dependence of additives adsorption behavior was summarized and employed in further simulation. A model estimation method was applied to estimate the precision. This model was then utilized in Finite Element Method (FEM) simulation, and the results gave a glimpse of the defect formation in via filling.
填充铜电沉积中添加剂分布的电位依赖性
通过电沉积铜填充实现三维封装和降低成本是目前业界关注的热点。为了实现无空洞无接缝的“自下而上”充填,人们对添加剂的作用机理进行了大量的研究。有机含硫促进剂双(3-磺基丙基)二硫醚(SPS)和抑制剂(如聚乙二醇(PEG))是“自下而上”填充通孔时常见的添加剂。本文研究了一种直接的SPS-PEG添加剂体系“自下而上”填充模拟方法。在该方法中,总结了添加剂吸附行为的潜在依赖性,并将其用于进一步的模拟。采用模型估计方法对精度进行估计。利用该模型进行了有限元模拟,结果揭示了通孔填充过程中缺陷的形成过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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