An improvement of membrane structure of MEMS piezoresistive pressure sensor

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI:10.1109/ICEPT.2015.7236789

Zebang Huang, Xiaosong Ma

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引用次数: 4

Abstract

This paper describes an improvement of the membrane structure of MEMS piezoresistive(PZR) pressure sensor. Finite element method (FEM) is applied to design and optimize the property of PZR the membrane structure and piezoresistors stress analysis is performed under the rated pressure. An equation that transfers the simulation stress data into output voltage is proposed in this paper according to the Wheatstone bridge principle and piezoresisitive effect in silicon. In order to achieve better sensor performance, several kinds of output voltage curve of the membrane structure were contrasted to obtain a suitable membrane structure. The design parameters of the pressure sensor include membrane size and shape and the location of piezoresistance. After that the pressure-output characteristic, the nonlinear error of the optimization sensor and the mechanical stability were analyzed. The results confirmed that the optimization structure has good sensitivity and linearity. It is a kind of high stability, high sensitivity, and low linear error of MEMS PZR pressure sensor.

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MEMS压阻式压力传感器膜结构的改进

本文介绍了MEMS压阻式(PZR)压力传感器膜结构的改进。采用有限元法对PZR薄膜进行了性能设计和优化，并对薄膜结构和压阻器在额定压力下的应力进行了分析。根据惠斯通电桥原理和硅的压阻效应，提出了将模拟应力数据转化为输出电压的方程。为了获得更好的传感器性能，对比了几种膜结构的输出电压曲线，得到了一种合适的膜结构。压力传感器的设计参数包括膜的尺寸和形状以及压阻的位置。然后对优化传感器的压力输出特性、非线性误差和机械稳定性进行了分析。结果表明，优化结构具有良好的灵敏度和线性度。它是一种高稳定性、高灵敏度、低线性误差的MEMS PZR压力传感器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 16th International Conference on Electronic Packaging Technology (ICEPT)

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