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2022 45th International Spring Seminar on Electronics Technology (ISSE)最新文献

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Numerical Simulations of Shear Stress in Microfluidic Channel Models 微流体通道模型中剪切应力的数值模拟
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812787
Rebeka Kovács, Alexandra Borók, A. Bonyár
{"title":"Numerical Simulations of Shear Stress in Microfluidic Channel Models","authors":"Rebeka Kovács, Alexandra Borók, A. Bonyár","doi":"10.1109/ISSE54558.2022.9812787","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812787","url":null,"abstract":"Von Willebrand factor (vWF) is the largest glycoprotein in blood, which plays a major role in primary haemostasis via its interaction with endothelial cell surface receptors and platelets. Altered shear stress value can cause conformational unfolding of vWF, which leads to the activation of the factor. The primary aim of this work is to study the effect of shear stress on the activation of vWF with the designed microfluidic chambers. Numerical simulations were performed on different three-dimensional microfluidic system models, including two input channels converging and forming a single output. In this work, the flow field, the occurring shear stress, and velocity between the two fluids with different densities and dynamic viscosities were investigated. The numerical simulations are necessary to understand the flow field and the shear stress, which affect the factor.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123872066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evolution of Lithium-Ion Battery Model Parameters for CubeSats Missions 立方体卫星任务中锂离子电池模型参数的演变
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812774
A. Pražanová, V. Knap
{"title":"Evolution of Lithium-Ion Battery Model Parameters for CubeSats Missions","authors":"A. Pražanová, V. Knap","doi":"10.1109/ISSE54558.2022.9812774","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812774","url":null,"abstract":"The popularity of CubeSats has grown in the last few years. CubeSats are small-sized, low-weight satellites commonly used in low Earth orbit for remote sensing or communications. Their most considerable benefits are their high flexibility, quick lead time, and significantly lower price than ‘classical’ satellites, due to their vast use of commercial off-the-shelf components. Lithium-ion batteries are being used as energy storage within these components. Batteries are necessary for the spacecraft; they supply energy when there is not enough generation from solar panels, especially during eclipses. The batteries undertake a series of operations during missions in various conditions that influence their lifetime and performance. The performance of these batteries can be modelled via an electrical-circuit model. Thus, a set of characterization and degradation tests considering cycling aging were performed to identify the cell behaviour throughout an expected battery life in a CubeSat. The aging trends of the battery model parameters based on the provided parametrization procedure were observed and evaluated. Moreover, the developed model reaches high accuracy for a mission profile with the root-mean-square-error below 9 mV.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124766857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mass-Sensitive Gas Detectors Based on Bulk Micromachined Silicon Cantilevers Coated by Carbyne-Enriched Nanolayer 富碳纳米层包覆硅悬臂梁的质量敏感气体探测器
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812768
Mariya Aleksandrova, G. Kolev, Andrey Brigadin, A. Lukin
{"title":"Mass-Sensitive Gas Detectors Based on Bulk Micromachined Silicon Cantilevers Coated by Carbyne-Enriched Nanolayer","authors":"Mariya Aleksandrova, G. Kolev, Andrey Brigadin, A. Lukin","doi":"10.1109/ISSE54558.2022.9812768","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812768","url":null,"abstract":"Cantilever elements were designed and fabricated by silicon microfabrication technologies to create gas sensor architecture, employing a novel class of carbyne-enriched nanomaterial. It was intended to explore the potential of the element as a sensitive sensor of volatile organic compounds (VOCs), in particular of ethanol vapors. The fabrication technology was described in detail and the mass sensitivity and response times were compared for cantilever structures with different beam lengths. The carbyne-enriched nanolayer was deposited on the silicon cantilevers by ion-assisted pulse-plasma deposition. The results showed better sensitivity and broader linear dynamic range for the longer beam cantilever of 240 μm (0.71 mHz/ppm vs. 0.3 mHz/ppm), but shorter response and recovery time, as well as smaller hysteresis for the shorter beam cantilever of 200 μm (14.8/17.5 s vs. 16/27.9 s). This is the first demonstration of the novel coating implemented in a practically useful ethanol sensing structure with electromagnetically driven, mass-sensitive principle of operation and possible application in the food industry, medicine, pharmacology, or microelectronic industry.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125065366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Metal Gate Work Function Variation on Underlap FinFET 金属栅功函数变化对搭接FinFET的影响
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812789
R. Rathore, V. Srivastava
{"title":"Effect of Metal Gate Work Function Variation on Underlap FinFET","authors":"R. Rathore, V. Srivastava","doi":"10.1109/ISSE54558.2022.9812789","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812789","url":null,"abstract":"In the sub-20 nm regime, the conventional poly-Silicon material used for gate electrodes has been widely replaced by a metal gate. In this present research work, the influence of metal gate Work-Function Variability (WFV) on electrical parameters for underlap FinFET devices has been realized using the 3D electronic device simulator. In addition, the standard deviation (σ) reveals that the impact of WFV on Gate-Source/Drain (g-s/d) underlap length led to substantial fluctuations in all electrical performance parameters. This analysis suggests that the impact of WFV on performance parameters dominates in shorter g-s/d underlap length FinFET device. In addition, SRAM cell variability of three different underlap FinFET devices due to WFV has been justified. It has been concluded that WFV results in substantial performance and reliability improvement in the designed underlap FinFET devices.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130484320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Textile sensor for skin hydration measurement 皮肤水分测量用纺织品传感器
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812794
Jan Balaban, T. Blecha
{"title":"Textile sensor for skin hydration measurement","authors":"Jan Balaban, T. Blecha","doi":"10.1109/ISSE54558.2022.9812794","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812794","url":null,"abstract":"This paper deals with the design and realization of capacitive textile sensors for skin hydration measurement. Skin hydration level is an important parameter for the healthy condition of the body and is also often used in dermatology and cosmetology. Many commercial devices are known for measuring skin hydration, which is mainly determined by medical doctors but is not suitable for longterm patient monitoring. For this reason, textile sensors and wearable evaluation electronic units were designed and created. The result is a wearable system including a textile sensor that can be easily integrated into clothes for better patient comfort. Skin hydration level is calculated based on measured sensor capacity. Obtained results will be useful for the following research on in-home care and smart textile.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123241795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Deposition of Perovskite Thin Layer with Electrospraying for Solar Cells 电喷涂沉积钙钛矿薄层的研究
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812826
Kristóf Hegedűs, F. Ender, Neumann Peter Lajos, B. Plesz
{"title":"Deposition of Perovskite Thin Layer with Electrospraying for Solar Cells","authors":"Kristóf Hegedűs, F. Ender, Neumann Peter Lajos, B. Plesz","doi":"10.1109/ISSE54558.2022.9812826","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812826","url":null,"abstract":"Perovskite is a promising material to create novel, economical solar cells as a competitor of traditional silicon-based ones. Electrospraying technique was used to create thin, homogenous, continuous perovskite film from precursor solution from minimal raw material. In this work we used methylammonium lead iodide perovskite solutions to electrospray on an indium tin oxide substrate at different temperatures. After optimizing the spraying parameters, quasi-homogeneous thin film was formed. Moreover, thermal, and solvent annealing helped to increase the crystal size and reduce porosity.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123890959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New PhD Course: Statistical analysis and evaluation of technological data 新博士课程:技术数据的统计分析与评价
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812765
Martin Molhanec
{"title":"New PhD Course: Statistical analysis and evaluation of technological data","authors":"Martin Molhanec","doi":"10.1109/ISSE54558.2022.9812765","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812765","url":null,"abstract":"This paper describes a new university course which was created especially for doctoral students in Electrical Engineering, the faculty to which the author’s department belongs to. The first part of the paper describes the reasons for its creation, the second part deals with its content comprising data science, statistical analysis, Python programming language, Jupyter development environment, and more. The paper is completed by evaluating the success of the course.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122175194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IC Implementation of Subthreshold Current Temperature Independent Power-on-Reset Circuit 亚阈值电流温度无关上电复位电路的集成电路实现
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812834
Georgi Savov, G. Angelov, M. Hristov
{"title":"IC Implementation of Subthreshold Current Temperature Independent Power-on-Reset Circuit","authors":"Georgi Savov, G. Angelov, M. Hristov","doi":"10.1109/ISSE54558.2022.9812834","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812834","url":null,"abstract":"Abstract: Power-on-reset (POR) circuit with low current consumption, temperature independent has been developed. The circuit contains several sub-circuits such as self-biased current generator, analog comparator with hysteresis, Schmitt trigger and supply filter. Two nano amp currents with positive temperature coefficients (PTAT), generated from self-bias current generator - one applied on resistor, and one applied on two diode string connected to the supply, are compared at the two inputs of analog comparator. By controlling the resistance value and the multiplier of the current bias, the low-to-high threshold is precisely settled. This also allows to control the temperature behavior of the voltage on the inputs of the comparator and make POR threshold levels less temperature dependent. A hysteresis has been added in the analog comparator, which is used to set the high-to-low POR threshold and to prevent the circuitfrom wrong triggering and oscillations. This circuit is designed in TSMC 0.18 $mu$m technology kit. The simulations are performed at schematic level only, with 5V supply voltage.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116635233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Battery Digital Twins 电池数码双胞胎
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812769
M. Olteanu, D. Petreus
{"title":"Battery Digital Twins","authors":"M. Olteanu, D. Petreus","doi":"10.1109/ISSE54558.2022.9812769","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812769","url":null,"abstract":"It is no longer a secret that we are experiencing a revolution in electric cars. However, one problem remains unresolved: how do we manage lithium-ion batteries more efficiently? Battery life depends on the materials the batteries are made of, the design of the system, and the conditions under which it operates. All these factors make efficient battery power management a real challenge. Even so, to the growing understanding of how a battery degrades over time, due to the existence of new tools for modeling and providing a diagnosis, the idea of merging the knowledge that we have already with artificial intelligence, to create a digital “twin” of the battery. This paper aims to present some preliminary results of a complex system that uses artificial intelligence to simulate and model the real behavior of batteries.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115603843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Influence of No-Clean Flux on The Corrosivity of Copper After Reflow 不清洁助熔剂对回流后铜腐蚀性能的影响
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812708
K. Sorokina, K. Dušek, D. Bušek
{"title":"Influence of No-Clean Flux on The Corrosivity of Copper After Reflow","authors":"K. Sorokina, K. Dušek, D. Bušek","doi":"10.1109/ISSE54558.2022.9812708","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812708","url":null,"abstract":"The use of flux when soldering is essential to obtain a reliable solder joint. No-clean fluxes are most often used in lead-free soldering. This raises the question of the need to clean the flux residues due to their aggressiveness. The purpose of this work is to understand the importance of the flux chemistry and impact of weak organic acids (WOAs) on the corrosivity of copper surface after reflow. During this investigation the aggressiveness of six different no-clean fluxes for lead-free soldering on toward copper surface was observed. The results showed the flux aggressiveness depended on the flux composition. Fluxes Weller Lötwasser and Topnik RF800 showed less aggressive effect toward copper surface after heat treatment. The results of the study also showed that one of more aggressive fluxes, such as Topnik LP-1, corroded the copper surface to a depth of about 50 $mu m$.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122164964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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