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2022 45th International Spring Seminar on Electronics Technology (ISSE)最新文献

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Investigation of ESD Devices Turn-On Time Definitions ESD器件导通时间定义的研究
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812810
Boris D. Dobrichkov
{"title":"Investigation of ESD Devices Turn-On Time Definitions","authors":"Boris D. Dobrichkov","doi":"10.1109/ISSE54558.2022.9812810","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812810","url":null,"abstract":"This paper explores and compares three definitions for evaluating turn-on time (tON) of ESD devices under charged device model (CDM) type stress. The behavior of SCR and STI diode protection devices in the time-domain is investigated using vf-TLP tester. Each tON definition is applied on the characterization data using specially developed automation tool, designed to help extract parameters out of waveforms.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131306254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Adhesion evaluation of parylene AF4 to silicon and glass substrate 聚对二甲苯AF4与硅和玻璃基板的附着力评价
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812818
T. Sinani, G. Miskovic
{"title":"Adhesion evaluation of parylene AF4 to silicon and glass substrate","authors":"T. Sinani, G. Miskovic","doi":"10.1109/ISSE54558.2022.9812818","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812818","url":null,"abstract":"This work is focusing on evaluating parylene AF4 adhesion toward silicon and glass substrate. Parylene AF4 with thicknesses of $1.6 {mu} mathrm{m}$ and $2.5 {mu} mathrm{m}$ was deposited by vapor deposition polymerization (VDP) on a six-inch polished silicon (Si) wafer and glass (SiO2) wafer, thicknesses of $675 {mu} mathrm{m}$ and $400 {mu} mathrm{m}$ respectively. The adhesion was evaluated using pull-off approach following ISO 15754 standard, where adhesion strength of parylene was measured toward the wafer substrates. For different samples, force vs. time (F/t) curves were measured and compared. Analysis and conclusions regarding the different thicknesses and different substrate materials are made. In addition, optical microscopy was used for analysis and imaging the delamination of the AF4 coatings after the pull-off.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132574204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
LTCC based Passive Compensation Circuits for High Temperature Sensors 基于LTCC的高温传感器无源补偿电路
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812786
P. Pandey, A. Goldberg, S. Ziesche
{"title":"LTCC based Passive Compensation Circuits for High Temperature Sensors","authors":"P. Pandey, A. Goldberg, S. Ziesche","doi":"10.1109/ISSE54558.2022.9812786","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812786","url":null,"abstract":"A current research focus has been the high-temperature applications of LTCC based sensors. The field of sensors in Low Temperature Co-Fired Ceramics (LTCC) technology has grown dramatically over the last few years, bringing new possibilities for challenging electronics and packaging applications. Due to their high precision, low cost and high reliability at elevated temperatures and harsh environments, sensors manufactured using LTCC technology have been widely used in industrial fields in recent years. The error arising from the effect of temperature in harsh environments that results in measurement inaccuracy is a major problem associated with high temperature sensors. Different passive resistor temperature compensation techniques were verified experimentally under high temperature and pressure conditions. Finally, a high temperature LTCC based pressure sensor with integrated compensating circuit was manufactured and tested in the temperature and pressure range of 100 to 500 °C and 0 to 50 bar. This technique shows very promising results in the elimination of the zero-pressure offset and decreases the errors caused by temperature variations. Laser trimming is performed to reduce the measurement errors and achieve temperature compensation.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122860062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Weakness of Wetting Balance Method during the Diagnostic of Connector Pins with Wetting Issue 润湿平衡法在诊断连接器引脚润湿问题中的缺陷
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812772
K. Dušek, P. Veselý, Denis Froš, Martin Kozak, K. Sorokina, Zbyněk Plachý, D. Bušek, J. Dušek, I. Králová, Markéta Klimtová, M. Placek
{"title":"A Weakness of Wetting Balance Method during the Diagnostic of Connector Pins with Wetting Issue","authors":"K. Dušek, P. Veselý, Denis Froš, Martin Kozak, K. Sorokina, Zbyněk Plachý, D. Bušek, J. Dušek, I. Králová, Markéta Klimtová, M. Placek","doi":"10.1109/ISSE54558.2022.9812772","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812772","url":null,"abstract":"The wetting balance method is used for the precise classification of solderability of chosen substrates by solder alloys. This work deals with a weakness of the wetting balance method during the wettability measurement of connectors with the wetting issue. The wetting issues at examined pins connector appeared during the serial manufacturing production, and therefore, the connector pins were analysed using the wetting balance method. The wetting balance method showed a good wetting of the connector pins. The wetted pins were examined by scanning electron microscopy (SEM) to find the reason for the wetting issue. This analysis showed a non-wetted area at pins edges. Following investigation of pins microsections using confocal/optical microscopy showed the reason for the wetting issue, when the surface finish was much thinner or was missing on the edges of the pin. This was the reason for the wetting issue of the connector pins in serial manufacturing, even though the wetting balance test showed good wettability results because most parts of the pin surface had good wetting.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"441 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125780204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Determination and Comparison of the SERS Enhancement Factor for Nanocomposite Substrates 纳米复合材料表面SERS增强因子的测定与比较
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812773
Shireen Zangana, T. Lednický, I. Rigó, A. Bonyár
{"title":"Determination and Comparison of the SERS Enhancement Factor for Nanocomposite Substrates","authors":"Shireen Zangana, T. Lednický, I. Rigó, A. Bonyár","doi":"10.1109/ISSE54558.2022.9812773","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812773","url":null,"abstract":"The surface-enhanced Raman spectroscopy (SERS) enhancement factor (EF) for different types of Au NP – epoxy surface nanocomposites were determined and compared in this work. The surface nanocomposites were fabricated with varying nanoparticle and inter-particle distances and were used for the label-free detection of DNA (deoxyribonucleic acid) molecules with SERS. Different types of SERS EF (electrical field-enhancement based, substrate-specific, etc.) were determined for three different surface nanocomposites. The relevance and applicability of different SERS EFs for the characterization of the substrates and the effect of particle size / interparticle gap ratio on the determined EFs were discussed in the paper.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126840619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Characterization of Embroidered Electroacoustic Transducer 绣花电声换能器的设计与特性
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812821
Karel Šíma, J. Navrátil, Julie Hladikova, Stanislav Bouzek, A. Hamácek
{"title":"Design and Characterization of Embroidered Electroacoustic Transducer","authors":"Karel Šíma, J. Navrátil, Julie Hladikova, Stanislav Bouzek, A. Hamácek","doi":"10.1109/ISSE54558.2022.9812821","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812821","url":null,"abstract":"This paper is focused on designing and characterization of embroidered electroacoustic transducer placed on the magnet. This type of transducer can be used as a feedback or notification element in an advanced smart textile system. Multiple transducer designs and threads were used in the experiment. Results from measuring of acoustic level have showed, that embroidered electroacoustic transducer can be used as a full-featured speaker for the feedback system. The results have showed the ability to play simple sounds and melodies through this electroacoustic transducer.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127255005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wireless Gyro-mouse for Text Input on a Virtual Keyboard 在虚拟键盘上进行文本输入的无线陀螺鼠标
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812793
Rareş Pogoreanu, R. Bozomitu
{"title":"Wireless Gyro-mouse for Text Input on a Virtual Keyboard","authors":"Rareş Pogoreanu, R. Bozomitu","doi":"10.1109/ISSE54558.2022.9812793","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812793","url":null,"abstract":"In this paper, we propose a gyroscopic pointing device that allows a user to type text by using a specialized virtual keyboard. We compare different typing methods that use the dwell time of the pointer as a character selection method. The proposed solution can be used in different applications, such as: computer gaming, virtual reality, remote control and to facilitate communication with people affected by certain disabilities and can easily accommodate more types of users. The performances of different methods have been analyzed by using the speed of typing measured in words per minute, the task success rate, as well as the feedback from the user regarding comfort and perceived ease-of-use.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134498630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of Added Gallium and Phosphorus in Bismuth-Tin Solder Alloys on Mechanical Properties and Microstructure of Intermetallic Layer 铋锡钎料合金中添加镓和磷对金属间层力学性能和组织的影响
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812758
I. Králová, Markéta Klimtová, P. Veselý
{"title":"Impact of Added Gallium and Phosphorus in Bismuth-Tin Solder Alloys on Mechanical Properties and Microstructure of Intermetallic Layer","authors":"I. Králová, Markéta Klimtová, P. Veselý","doi":"10.1109/ISSE54558.2022.9812758","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812758","url":null,"abstract":"The goal of this work was to evaluate changes in mechanical properties and microstructure of the lead-free bismuth-tin alloys when adding gallium and phosphorus. These elements were added originally on account of melting temperature decrease (Ga) and improvement of wetting (P). Six different solders were examined: the eutectic one Bi58Sn42 as a reference, then Bi59Sn40Ga1 and Bi57Sn40Ga3. In addition, the investigation was also performed on all the mentioned alloys with an added trace amount of phosphorus. Mechanical properties were measured by the shear test of a solder ball on a copper substrate with Organic Solderability Preservatives (OSP) surface finish. Furthermore, the small balls of solder alloys were reflowed on boards with three different surface finishes: copper-plated, Hot Air Solder Levelling (HASL), and Electroless Nickel Immersion Gold (ENIG). These coupons were left to aging in the climatic chamber for 500 and 1 000 hours at a temperature of 100 °C. The metallographic cross-sections were made, and the microstructure of the intermetallic layer (IML) was analyzed by scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis. The shear test showed a significant decrease in the shear force by adding gallium. It was also found that the addition of phosphorus has only a minor (but still statistically significant) impact on the shear force. The addition of gallium affected the IML thickness and caused a considerable decrease compared to alloys without Ga. The reason was the composition of the IML. IML of Bi-Sn solder joints consisted of Cu-Sn, whereas the gallium-containing alloys formed IML consisted of Cu-Ga.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114461933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particles 微银颗粒无压直接键合金金属化衬底与硅片
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812830
M. Myśliwiec, R. Kisiel, K. Pavłov, M. Kruszewski
{"title":"Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particles","authors":"M. Myśliwiec, R. Kisiel, K. Pavłov, M. Kruszewski","doi":"10.1109/ISSE54558.2022.9812830","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812830","url":null,"abstract":"The aim of this work is to develop and investigate bare Si chips assembly to Au plated substrates. In this research thermal interface material paste based on mixture of micro-Ag particles and pressureless sintering at 175 °C was studied. Joints obtained in the experiments had adhesion of 10 MPa and thermal resistance as low as 0.25 K/W. Novelty of this work is application of micro-Ag paste at low temperature process and without pressure applied on the chip. Those parameters are usually shown as limitation of Ag paste applications. Additionally, after ageing for 500 h at 125°C and thermal cycles (-20°C ÷ 100°C) investigated joints maintained their mechanical and thermal properties.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134229051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Encapsulation Methods for Resistance-Welded Contacts in Smart Textiles 智能纺织品中电阻焊接触点的封装方法
2022 45th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2022-05-11 DOI: 10.1109/ISSE54558.2022.9812820
Stanislav Suchý, Kateřina Rostás, R. Soukup
{"title":"Encapsulation Methods for Resistance-Welded Contacts in Smart Textiles","authors":"Stanislav Suchý, Kateřina Rostás, R. Soukup","doi":"10.1109/ISSE54558.2022.9812820","DOIUrl":"https://doi.org/10.1109/ISSE54558.2022.9812820","url":null,"abstract":"The following paper deals with methods of encapsulation of resistive spot welds of conductive hybrid yarns on a textile substrate. The paper describes the welding process and subsequent encapsulation of the samples by ultrasonic welding and lamination. The optical inspection was performed during the welds and the electrical contact resistance was measured after welding.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133593589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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