{"title":"Investigation of ESD Devices Turn-On Time Definitions","authors":"Boris D. Dobrichkov","doi":"10.1109/ISSE54558.2022.9812810","DOIUrl":null,"url":null,"abstract":"This paper explores and compares three definitions for evaluating turn-on time (tON) of ESD devices under charged device model (CDM) type stress. The behavior of SCR and STI diode protection devices in the time-domain is investigated using vf-TLP tester. Each tON definition is applied on the characterization data using specially developed automation tool, designed to help extract parameters out of waveforms.","PeriodicalId":413385,"journal":{"name":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 45th International Spring Seminar on Electronics Technology (ISSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSE54558.2022.9812810","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper explores and compares three definitions for evaluating turn-on time (tON) of ESD devices under charged device model (CDM) type stress. The behavior of SCR and STI diode protection devices in the time-domain is investigated using vf-TLP tester. Each tON definition is applied on the characterization data using specially developed automation tool, designed to help extract parameters out of waveforms.