微银颗粒无压直接键合金金属化衬底与硅片

M. Myśliwiec, R. Kisiel, K. Pavłov, M. Kruszewski
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引用次数: 3

摘要

这项工作的目的是开发和研究裸硅片组装到镀金衬底。研究了175℃无压烧结微银混合材料的热界面材料浆料。实验得到的接头附着力为10 MPa,热阻低至0.25 K/W。这项工作的新颖之处在于在低温工艺下应用微银膏体,而无需在芯片上施加压力。这些参数通常表现为银膏体应用的限制。此外,在125°C和热循环(-20°C至100°C)下时效500小时后,接头保持了其机械和热性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particles
The aim of this work is to develop and investigate bare Si chips assembly to Au plated substrates. In this research thermal interface material paste based on mixture of micro-Ag particles and pressureless sintering at 175 °C was studied. Joints obtained in the experiments had adhesion of 10 MPa and thermal resistance as low as 0.25 K/W. Novelty of this work is application of micro-Ag paste at low temperature process and without pressure applied on the chip. Those parameters are usually shown as limitation of Ag paste applications. Additionally, after ageing for 500 h at 125°C and thermal cycles (-20°C ÷ 100°C) investigated joints maintained their mechanical and thermal properties.
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