{"title":"The 3J-IMM solar cell: Pathways for insertion into space power systems","authors":"A. Cornfeld, J. Diaz","doi":"10.1109/PVSC.2009.5411129","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411129","url":null,"abstract":"The 3J-IMM AM0 solar cell is a 3 sub-cell photovoltaic device with near optimized band-gaps for the irradiation spectrum. This low mass (0.012 g/cm2) high efficiency (32.4% AM0) flexible cell is an excellent candidate for applications where high specific power (≫1 W/g), high areal power (400W/m2) and cell flexibility are required. Several applications for this cell have been suggested for which its unique characteristics make it the best candidate. Those applications include 1) powering an unmanned aerial vehicle and 2) incorporation into low mass flexible satellite solar panels. With these two applications in mind, we present approaches for cell interconnect and lay-down. These steps are critical for insertion of this new and promising cell technology into space based power generation systems.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114869090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. D. Walker, H. Khatri, V. Ranjan, S. Little, Rosa M. Zartman, R. Collins, S. Marsillac
{"title":"Dielectric functions and growth dynamics of CuIn1−x,GaxSe2 absorber layers via in situ real time spectroscopic ellipsometry","authors":"J. D. Walker, H. Khatri, V. Ranjan, S. Little, Rosa M. Zartman, R. Collins, S. Marsillac","doi":"10.1109/PVSC.2009.5411223","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411223","url":null,"abstract":"In situ, real time spectroscopic ellipsometry (RTSE) has been used to study the growth dynamics of the chalcopyrite thin film absorber layer; copper indium gallium diselenide, CuIn1−x,GaxSe2. Time dependent bulk layer (db) and surface roughness layer (ds) thicknesses were extracted in the early stages of film growth using growth temperature optical dielectric functions determined in the same analysis. We find that an accurate determination of the dielectric function can be obtained during the initial stages of film growth where the surface roughness is relatively low. Non-destructive optical feedback via RTSE on the growth dynamics and electronic properties of the absorber layer could play an important role in improving device efficiencies on both the laboratory and industrial scales.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124128422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yi Wang, Xuesong Lu, Susan R. Huang, Xiaoting Wang, B. Opila, A. Barnett
{"title":"Heteroepitaxial growth of SiGe on Si by LPE for high efficiency solar cells","authors":"Yi Wang, Xuesong Lu, Susan R. Huang, Xiaoting Wang, B. Opila, A. Barnett","doi":"10.1109/PVSC.2009.5411424","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411424","url":null,"abstract":"Heteroepitaxy SiGe on Si by liquid phase epitaxy (LPE) is a potential material for photovoltaic application. The Si0.05Ge0.95 solar cell with an energy gap of 0.72 eV can lead to a 7 percentage point increase in the Si-based multi-bandgap system or any multi-bandgap system that contains Si as the 1.1 eV solar cell. In this initial work we report first growth SixGe1−x with 0.5≪x≪1 on Si substrate from Sn solution by LPE. Several microns thick n type SiGe layer on (111)-oriented Si substrate has been grown. EDS shows 53 At% germanium concentration in the SiGe alloy. SEM shows continuity and uniformity.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127594606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The structural evolution of CGS thin film during three-stage deposition process","authors":"H. Al-Thani, F. Hasoon","doi":"10.1109/PVSC.2009.5411677","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411677","url":null,"abstract":"CGS thin films were deposited on Molybdenum coated soda lime glass (Mo/SLG) substrates, using physical vapor deposition (PVD) 3-stage process. In order to study the evolution of the CGS growth process and the Na out-diffusion in the CGS films from SLG substrates, the structural phase transitions were traced in the CGS films indicated by multiple exothermic reactions that occur during the growth process. The CGS films' structure was examined and the films' growth phase was identified by applying θ/2θ X-Ray Diffraction characterization technique. Secondary-ion mass spectrometry (SIMS) was also applied to depth profile the Na in the CGS/Mo/SLG films.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126294331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Suwito, J. Fernández, S. Janz, F. Dimroth, S. Glunz
{"title":"The influence of annealing on the passivation quality of A-SiCX:H on crystalline silicon and germanium surfaces","authors":"D. Suwito, J. Fernández, S. Janz, F. Dimroth, S. Glunz","doi":"10.1109/PVSC.2009.5411186","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411186","url":null,"abstract":"This paper is addressed to the surface passivation of c-Si and c-Ge wafers by plasma enhanced chemical vapor deposition (PECVD) of Si-rich a-SiCx. We report upon excellent effective lifetimes on 1 ¿cm CZ p-Ge substrates exceeding 400 ¿s after an annealing step of 450°C. The comparison of the thermal stability of the passivation quality on the respective substrates reveals experimentally, that contrary to the system c-Si/a-SiCx, hydrogen plays a minor role in the electrical passivation of c-Ge surfaces by a-SiCx. This phenomenon is discussed considering the different work functions and band gaps of the respective materials and different possibilities for the role of carbon in the passivating matrix are outlined.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126410457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Pysch, J. Ziegler, J. Becker, D. Suwito, S. Janz, S. Glunz, M. Hermle
{"title":"Potentials and development of amorphous silicon carbide heterojunction solar cells","authors":"D. Pysch, J. Ziegler, J. Becker, D. Suwito, S. Janz, S. Glunz, M. Hermle","doi":"10.1109/PVSC.2009.5411165","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411165","url":null,"abstract":"In this paper the potential of amorphous silicon carbide used as an emitter for silicon heterojunction solar cells is presented. Especially the annealing behaviour of the open-circuit voltage Voc of n-doped amorphous silicon carbide heterojunction emitter solar cells is investigated in detail. We present our results of a significant open-circuit voltage improvement of more than 100 mV on both a flat and a textured front surface triggered by thermal annealing on a hot plate. The observed open-circuit voltage behaviour can be described best by a stretched exponential function, which in general describes relaxation rates in complex systems. Further we investigated the optimum conditions of a post deposition annealing step in order to reach the highest efficiency. During this analysis we also observed deterioration in solar cell performance when the structure is annealed for a very long time. In conclusion, we suppose that a diffusion of weakly bonded or free hydrogen, activated by the annealing which saturates dangling bonds in the amorphous layer itself and most likely more important at the heterojunction interface, is responsible for the strong improvement in Voc and efficiency.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121935690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Jiang, H. Moutinho, F. Liu, M. Romero, M. Al‐Jassim
{"title":"Carrier depletion and grain misorientations on individual grain boundaries of polycrystalline Si thin films","authors":"C. Jiang, H. Moutinho, F. Liu, M. Romero, M. Al‐Jassim","doi":"10.1109/PVSC.2009.5411640","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411640","url":null,"abstract":"Structural and microelectrical properties of grain boundaries (GBs) in polycrystalline Si thin films were investigated by electron backscattering diffraction (EBSD) and scanning capacitance microscopy (SCM). The SCM measurements revealed highly nonuniform carrier depletions among the GBs, indicating the variety of electrical properties due to the specific GB structures. The EBSD measurement showed that the films are weakly [001]-oriented with small fractions of grains in the [111] and [110] orientations. Comparison of the SCM and EBSD measurements taken on the same film area led to the following observations: (1) Σ3 GBs do not exhibit carrier depletions and thus do not have charged deep levels; (2) Some Σ9 GBs exhibit carrier depletions and some do not, indicating that the intrinsic 9 GBs do not have charged deep levels and the carrier depletions are due to impurity gettering at the GBs; (3) No significant relationship between the carrier depletion behavior and the grain misorientation was found so far on the GBs with random misorientations; (4) The carrier depletion behavior does not depend only on the grain misorientation but also on the facet where the GB is taken.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122226505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Lasich, P. Verlinden, A. Lewandowski, D. Edwards, H. Kendall, S. Carter, I. Thomas, P. Wakeman, M. Wright, W. Hertaeg, R. Metzke, M. Daly, M. Santin, A. Neumann, A. Wilson, A. Caprihan, M. Stedwell
{"title":"World's first demonstration of a 140kWp Heliostat Concentrator PV (HCPV) system","authors":"J. Lasich, P. Verlinden, A. Lewandowski, D. Edwards, H. Kendall, S. Carter, I. Thomas, P. Wakeman, M. Wright, W. Hertaeg, R. Metzke, M. Daly, M. Santin, A. Neumann, A. Wilson, A. Caprihan, M. Stedwell","doi":"10.1109/PVSC.2009.5411354","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411354","url":null,"abstract":"Solar Systems has more than 10 years experience with grid-connected CPV systems using large reflective optics. Over the last 7 years, Solar Systems has deployed 47 dish units, of which 23 are with multijunction solar cells, in five different commercial CPV power plants and two testing facilities, for a total installed capacity of 1.5 MWp. Recently, Solar Systems has designed and built a 140kWp Heliostat Concentrator PV (HCPV) system at its new Testing and Training Facility in Bridgewater, Victoria. The demonstration of the performance of the HCPV system met all the specification targets. The system reached a power output of 140kW with a DC efficiency of 24% to 26% and an optical efficiency of 84%, measured on two different days, four months apart, around solar noon. This is the first utility-scale Heliostat CPV system ever built. It is also for Solar Systems the first demonstration of a new technology to be deployed in a large 154-MWp power plant in Northern Victoria.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"84 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127979908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Mitchell, B. Keyes, H. Ullal, B. von Roedern, K. VanSant, M. Symko-Davies, Scott Stephens
{"title":"The PV Technology Incubator project","authors":"R. Mitchell, B. Keyes, H. Ullal, B. von Roedern, K. VanSant, M. Symko-Davies, Scott Stephens","doi":"10.1109/PVSC.2009.5411349","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411349","url":null,"abstract":"The PV Technology Incubator is structured to allow the utmost in flexible, innovative approaches targeted at research and development of photovoltaic (PV) systems and component prototypes to achieve prototype modules and pilot production. The PV Incubator project receives funding from the U.S. Department of Energy (DOE), through the National Renewable Energy Laboratory (NREL), and funding opportunities are cyclical. The PV Incubator project targets small businesses that have demonstrated a proof-of-concept/process in a laboratory, but still need to overcome significant barriers before they can achieve commercialization. After 18 months of funding, a successful project is expected to be able to enter the market in the 2011 timeframe at a price point that enables electricity close to grid parity. Ten Incubator subcontractors were awarded in 2007 and participated in Stage-Gate reviews in the summer of 2008. Seven of these companies transitioned to Phase II of their two-phased subcontract based on the outcome of the Stage-Gate review. In addition, a second Incubator solicitation was issued in 2008. The six companies selected for the 2008 round of funding were awarded subcontracts in early 2009. This presentation overviews the PV Incubator project, gives a brief synopsis of the current subcontracts and their accomplishments, addresses progress by subcontracts awarded under the Fiscal Year (FY) 2007 solicitation, and discusses new funding opportunities.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115828153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Timmerman, M. Bakker, A. Reinders, T. H. van der Meer
{"title":"Plug-and-play liquid PV thermal panels - integrated design for easy manufacturing and installation","authors":"M. Timmerman, M. Bakker, A. Reinders, T. H. van der Meer","doi":"10.1109/PVSC.2009.5411158","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411158","url":null,"abstract":"A photovoltaic-thermal panel or PVT panel simultaneously generates heat and electricity. This paper reports about the design of a new PVT panel by paying specific attention to user requirements, costs, manufacturing, building integration and installation. The panel's technical aspects and energy performance where also optimized. The result is a plug-and-play liquid PVT panel which consists of a PV laminate glued on top of a plastic channel absorber. The panel is covered by a plastic layer to reduce heat losses. It is equipped with four connection points which enhance the flexibility of the positioning of PVT panels on a tilted roof. Because of this feature the installation process will be simplified and installation costs will be decreased. Since part of the production process can be automated, production costs can be decreased as well. In Western Europe at an irradiation of 1000 kWh/m2.year, the PVT panel is expected to yield about 100 kWh/m2 of electricity and 1.0 GJ/m2 of heat.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115970623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}