Yi Wang, Xuesong Lu, Susan R. Huang, Xiaoting Wang, B. Opila, A. Barnett
{"title":"Heteroepitaxial growth of SiGe on Si by LPE for high efficiency solar cells","authors":"Yi Wang, Xuesong Lu, Susan R. Huang, Xiaoting Wang, B. Opila, A. Barnett","doi":"10.1109/PVSC.2009.5411424","DOIUrl":null,"url":null,"abstract":"Heteroepitaxy SiGe on Si by liquid phase epitaxy (LPE) is a potential material for photovoltaic application. The Si0.05Ge0.95 solar cell with an energy gap of 0.72 eV can lead to a 7 percentage point increase in the Si-based multi-bandgap system or any multi-bandgap system that contains Si as the 1.1 eV solar cell. In this initial work we report first growth SixGe1−x with 0.5≪x≪1 on Si substrate from Sn solution by LPE. Several microns thick n type SiGe layer on (111)-oriented Si substrate has been grown. EDS shows 53 At% germanium concentration in the SiGe alloy. SEM shows continuity and uniformity.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2009.5411424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Heteroepitaxy SiGe on Si by liquid phase epitaxy (LPE) is a potential material for photovoltaic application. The Si0.05Ge0.95 solar cell with an energy gap of 0.72 eV can lead to a 7 percentage point increase in the Si-based multi-bandgap system or any multi-bandgap system that contains Si as the 1.1 eV solar cell. In this initial work we report first growth SixGe1−x with 0.5≪x≪1 on Si substrate from Sn solution by LPE. Several microns thick n type SiGe layer on (111)-oriented Si substrate has been grown. EDS shows 53 At% germanium concentration in the SiGe alloy. SEM shows continuity and uniformity.