Yi Wang, Xuesong Lu, Susan R. Huang, Xiaoting Wang, B. Opila, A. Barnett
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Heteroepitaxial growth of SiGe on Si by LPE for high efficiency solar cells
Heteroepitaxy SiGe on Si by liquid phase epitaxy (LPE) is a potential material for photovoltaic application. The Si0.05Ge0.95 solar cell with an energy gap of 0.72 eV can lead to a 7 percentage point increase in the Si-based multi-bandgap system or any multi-bandgap system that contains Si as the 1.1 eV solar cell. In this initial work we report first growth SixGe1−x with 0.5≪x≪1 on Si substrate from Sn solution by LPE. Several microns thick n type SiGe layer on (111)-oriented Si substrate has been grown. EDS shows 53 At% germanium concentration in the SiGe alloy. SEM shows continuity and uniformity.