高效太阳能电池用LPE在Si上异质外延生长SiGe

Yi Wang, Xuesong Lu, Susan R. Huang, Xiaoting Wang, B. Opila, A. Barnett
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引用次数: 5

摘要

通过液相外延(LPE)在硅上异质外延SiGe是一种很有潜力的光伏材料。能隙为0.72 eV的Si0.05Ge0.95太阳能电池可以使硅基多带隙系统或任何含有Si作为1.1 eV太阳能电池的多带隙系统的性能提高7个百分点。在这项初步工作中,我们首次报道了从LPE锡溶液中在Si衬底上生长出尺寸为0.5 x≪1的SixGe1−x。在(111)取向Si衬底上生长了几微米厚的n型SiGe层。能谱分析显示锗含量为53 At%。扫描电镜显示出连续性和均匀性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Heteroepitaxial growth of SiGe on Si by LPE for high efficiency solar cells
Heteroepitaxy SiGe on Si by liquid phase epitaxy (LPE) is a potential material for photovoltaic application. The Si0.05Ge0.95 solar cell with an energy gap of 0.72 eV can lead to a 7 percentage point increase in the Si-based multi-bandgap system or any multi-bandgap system that contains Si as the 1.1 eV solar cell. In this initial work we report first growth SixGe1−x with 0.5≪x≪1 on Si substrate from Sn solution by LPE. Several microns thick n type SiGe layer on (111)-oriented Si substrate has been grown. EDS shows 53 At% germanium concentration in the SiGe alloy. SEM shows continuity and uniformity.
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