2009 34th IEEE Photovoltaic Specialists Conference (PVSC)最新文献

{"title":"Antireflection structure of silicon solar cells formed by wet process using catalysis of single nano-sized gold or silver particle","authors":"K. Nishioka, T. Sueto, N. Saito","doi":"10.1109/PVSC.2009.5411705","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411705","url":null,"abstract":"Antireflection nano structure was formed by simple wet chemical etching using catalysis of gold (Au) or silver (Ag) nanoparticle. Single nano-sized particle dispersion solution was coated onto Si(100) substrate with polished surface. Then, the samples were soaked in an aqueous etching solution of hydrofluoric acid and hydrogen peroxide. The surface of etched Si substrate appeared black, and the reflectivity was reduced to below 5% throughout the entire spectrum from 200 to 1000 nm owing to the formed nano structure. The absorption was significantly increased after the formation of antireflection structure, and the conversion efficiency of solar cell with antireflection structure increased from 8.52 to 10.0% owing to the increase of short-circuit current.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128590898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On space plasma ground test methodologies and related solar array design considerations","authors":"J. Likar, A. Bogorad, Barry G. Noakes, R. Herschitz","doi":"10.1109/PVSC.2009.5411311","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411311","url":null,"abstract":"Challenges associated with the design, testing, and qualification of space solar arrays for operation in plasma environments have led to the creation of collection of ground test and design guidelines, standards, and requirements. Discussions summarized herein examine unique design aspects affecting array performance in plasma environments and review test / analysis routines appropriate for typical space solar array production methods.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128594535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Directional emission in strain-balanced quantum well solar cells","authors":"J. Adams, J. Roberts, G. Hill, N. Ekins‐Daukes, K. Barnham","doi":"10.1109/PVSC.2009.5411734","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411734","url":null,"abstract":"The major loss mechanism in the strain-balanced quantum well solar cell is through radiative recombination in the quantum wells. This loss can be reduced through optical manipulation, as fundamentally the radiative emission need only occur in the direction of absorption. In strained quantum well systems, the valence band splits into heavy hole and light hole bands leading to the restriction of emission in the plane of the quantum wells [1]. This suppression of the radiative recombination leads to a higher power conversion efficiency limit.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128706895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The effect of ZnO replacement by ZnMgO ON ZnO/CdS/Cu(In,Ga)Se2 solar cells","authors":"Jian V. Li, Xiaonan Li, A. Kanevce, Yanfa Yan, I. Repins","doi":"10.1109/PVSC.2009.5411716","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411716","url":null,"abstract":"We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129441035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spatially composition-graded alloy semiconductor nanowires and wavelength specific lateral-multijunction full-spectrum solar cells","authors":"C. Ning, A. Pan, R. Liu","doi":"10.1109/PVSC.2009.5411337","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411337","url":null,"abstract":"We demonstrate chemical vapor deposition of single crystal ZnxCd1−xSySe1−y alloy nanowires with continuous spatial composition-grading (x and y from 0 to1) across a single wafer, resulting in a controlled spatial bandgap variation from ∼ 3.6 eV (ZnS) to ∼ 1.7eV (CdSe). To take advantage of this unprecedented material capability for photovoltaic applications, we analyzed several designs of lateral multijunction solar cells, where incoming solar light is spectrally dispersed, such that each wavelength band is incident onto a region of the wafer with the corresponding bandgap. Such designs have potential of realizing large numbers of junctions to allow the full potential of many junctions to be explored for high-efficiency dispersive concentration photovoltaics.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129658433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modelling the effects of distributed series resistance on Suns-Voc, m-Voc and Jsc-Suns curves of solar cells","authors":"O. Kunz, S. Varlamov, A. Aberle","doi":"10.1109/PVSC.2009.5411707","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411707","url":null,"abstract":"A simple model based on the simulation of distributed series resistance effects in solar cells is presented. This model overcomes limitations of the standard two-diode model representation of solar cells in respect to fitting Suns-Voc (m-Voc) and Jsc-Suns curves. The model results include (i) an improved understanding of two-dimensional current flows in shunted solar cells, (ii) the prediction of shunt types from m-Voc curves and corresponding distributed resistance model fits, (iii) the insight that lateral current flows in solar cells are responsible for deviations between Jsc-Suns data and two-diode model fits in the high illumination range. The presented approach extends the application range of Suns-Voc measurements to solar cells which cannot adequately be described with the two-diode model.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129692896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Triple junction InGaP/GaAS/Ge solar cell optimization: The design parameters for a 36.2% efficient space cell using Silvaco ATLAS modeling & simulation","authors":"M. Tsutagawa, S. Michael","doi":"10.1109/PVSC.2009.5411544","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411544","url":null,"abstract":"This paper presents the design parameters for a triple junction InGaP/GaAs/Ge space solar cell with a simulated maximum efficiency of 36.28% using Silvaco ATLAS Virtual Wafer Fabrication tool. Design parameters include the layer material, doping concentration, and thicknesses. An initial dual junction InGaP/GaAs model of a known Japanese solar cell was constructed in Silvaco ATLAS to an accuracy of less than 2% with known experimental Voc and Jsc performance results, validating the use of computer modeling to accurately predict solar cell performance. Once confidence of the model's meshing, material property statements, model statements, light file, and numerical methods were established, only the layer doping concentration levels and thicknesses were modified in order to improve the cell's power out efficiency. Simulations of the dual junction cell began by first changing only the doping concentrations and thicknesses to the values obtained from previous work using a genetic algorithm which showed a 0.6% increase in efficiency. Further improvements to the genetic algorithm design parameters showed an overall increase of 0.83% efficiency. Next, a triple junction InGaP/GaAs/Ge cell was modeled by adding a Ge layer to the validated dual junction InGaP/GaAs model. (The triple junction model could not be validated due to lack of published experimental data.) Applying the same process showed increased power output for the triple junction cell. The additional improvement to the genetic algorithm design parameters was principally based on the knowledge that the top InGaP layer is the current limiting layer. Hence, the top layer thickness was maximized until middle and bottom layer shadowing effects began to decrease power output. Over 250 simulations were performed and recorded. Maximum doping concentrations used real world limitations of 5e19 cm−3 for InGaP and GaAs and 3e18 cm−3 for Ge for all simulations. This process produced the design parameters for a 36.28% efficient triple junction solar cell. A provisional patent has been filed for this design.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130378577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel method to form nano-gridlines on textured CZ silicon wafers","authors":"L. Xu, P. Borden, M. Stewart, S. Paak","doi":"10.1109/PVSC.2009.5411184","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411184","url":null,"abstract":"We report a novel method to form metal nano-gridlines on textured Czochralski (CZ) silicon. This involves the deposition of tensile stressed silicon nitride under conditions that cause cracks at the base of the pyramid features. The crack width is adjusted with buffered BHF and the opening is self-aligned with the nitride as a mask. Subsequently, the metal lines are plated within the cracks, forming conductors with submicron dimensions. The metal grid provides a conduction path parallel to the emitter, relaxing sheet resistance requirements for a diffused emitter.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130675485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of ZnGeAs2 thin films produced by pulsed laser deposition","authors":"Z. Z. Tang, Lei Zhang, Rakesh Singh, D. Wright, T. Peshek, T. Gessert, T. Coutts, M. Schilfgaarde, Nathan Newman","doi":"10.1109/PVSC.2009.5411649","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411649","url":null,"abstract":"We have characterized the properties of chalcopyrite ZnGeAs2 thin films produced over a wide range of growth conditions using pulsed laser deposition. By using a Zn-enriched target, stoichiometric films could be produced up to a substrate temperature of 315° C; above which the films were Zn and As deficient. Optical absorption measurements indicate that bandgap of the ZnGeAs2 thin films is direct with a value of ∼1.15 eV. Hot point probe indicate that the as-deposited and annealed thin films are both p-type. Hall measurements confirm this and also indicate that the carrier mobility, μp, is over 50 cm2/V·sec in the 600° C annealed samples. Channeling Rutherford Backscattering Spectroscopy (RBS) indicates that the structurally best films are achieved after 450 °C annealing with a channeling yield, ?min, of 50%. Our results, in combination with the observation that the constituents are abundant elements, suggest that ZnGeAs2 is an ideal candidate for photovoltaic applications.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123813909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of lifetime degradation of RIE-processed silicon samples for solar cells","authors":"N. Zin, A. Blakers, K. Weber, Chun Zhang","doi":"10.1109/PVSC.2009.5411762","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411762","url":null,"abstract":"Reactive Ion Etching (RIE) is observed to cause substantial effective carrier lifetime degradation in silicon wafers. Degradation of lifetime is permanent for samples where RIE etches into silicon, while the lifetime degradation is temporary for samples where RIE etches only dielectric layers of SiO2 grown on the wafer. The degradation of the effective lifetime of RIE-etched silicon samples can be minimized by exposing only a few percent of the wafer to the etch.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121676324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}