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Metamorphic GaInP/GaInAs/Ge triple-junction solar cells with ≫ 41 % efficiency 效率达41%的变质GaInP/GaInAs/Ge三结太阳能电池
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411199
F. Dimroth, W. Guter, J. Schone, E. Welser, M. Steiner, E. Oliva, A. Wekkeli, G. Siefer, S. Philipps, A. Bett
{"title":"Metamorphic GaInP/GaInAs/Ge triple-junction solar cells with ≫ 41 % efficiency","authors":"F. Dimroth, W. Guter, J. Schone, E. Welser, M. Steiner, E. Oliva, A. Wekkeli, G. Siefer, S. Philipps, A. Bett","doi":"10.1109/PVSC.2009.5411199","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411199","url":null,"abstract":"The use of lattice-mismatched materials offers an additional degree of freedom to the design of an optimum bandgap combination in a multi-junction solar cell. This allows for achieving higher conversion efficiencies compared to state-of-the-art lattice-matched systems if the material quality of the pn-junctions can be kept sufficiently high. Work performed at the Fraunhofer ISE on metamorphic GaInP/GaInAs/Ge triple-junction solar cells with 1.2% lattice-mismatch between the middle and bottom cell recently yielded a new record efficiency of 41.1% under 454-fold concentration of the AM1.5d spectrum. This paper summarizes the main benefits of the metamorphic solar cell approach and discusses some of the challenges associated with the development of this device structure.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123700894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
Numerical modeling of loss mechanisms resulting from the distributed emitter effect in concentrator solar cells 聚光太阳能电池分布发射极效应损耗机理的数值模拟
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411371
A. Haas, J. Wilcox, J. Gray, R. J. Schwartz
{"title":"Numerical modeling of loss mechanisms resulting from the distributed emitter effect in concentrator solar cells","authors":"A. Haas, J. Wilcox, J. Gray, R. J. Schwartz","doi":"10.1109/PVSC.2009.5411371","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411371","url":null,"abstract":"Power loss associated with lateral current flow in solar cell emitter layers is known to cause fill-factor degradation. In this work, a unique approach to modeling the lateral current flow in solar cell emitter layers is developed using MATLAB™ and current-generation models based upon one-dimensional detailed numerical cell models. An example is employed to illustrate the high degree of accuracy of this approach and that in addition to joule losses in the emitter layer and conducting electrodes, a third loss mechanism, which is the result of the potential gradient across the cell surface, also plays an important role. The relationship between these loss mechanisms is explored over a wide range of concentrations under both uniform and non-uniform illumination for the example cell.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125268080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Challenges for IEC62108 testing IEC62108测试的挑战
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411355
I. Petrina, A. Cueli, J. Díaz, J. Moracho, X. Ariztimuno, A. Lagunas
{"title":"Challenges for IEC62108 testing","authors":"I. Petrina, A. Cueli, J. Díaz, J. Moracho, X. Ariztimuno, A. Lagunas","doi":"10.1109/PVSC.2009.5411355","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411355","url":null,"abstract":"The evaluation of durability, safety and performance of photovoltaic modules is becoming an important point when trying to establish a product into the market, mostly for the new technologies appearing. In that sense, the committee of experts dedicated to write the IEC standards, put together a set of tests that can allow deciding on those quality points. In this paper, a revision of major difficulties in implementing the tests according to recently issued IEC-62108, Ed.1 standard, for concentrator photovoltaic modules (CPV) and assemblies, is made. The content is structured starting with the concept of product certification followed by a summary of the different types of existing CPV modules and the implications of that into the tests proposed by IEC-62108. Finally a description of main differences between the new standard and the experienced IEC-61215:2005 for crystalline Silicon PV modules is presented.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125614336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved performance of thin-film solar cells using surface-morphology-controlled poly-Si films crystallized by flash lamp annealing 利用表面形貌控制的多晶硅薄膜通过闪光灯退火结晶来提高薄膜太阳能电池的性能
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411767
K. Ohdaira, H. Takemoto, K. Shiba, T. Nishikawa, K. Kôyama, H. Matsumura
{"title":"Improved performance of thin-film solar cells using surface-morphology-controlled poly-Si films crystallized by flash lamp annealing","authors":"K. Ohdaira, H. Takemoto, K. Shiba, T. Nishikawa, K. Kôyama, H. Matsumura","doi":"10.1109/PVSC.2009.5411767","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411767","url":null,"abstract":"We improve the performance of thin-film solar cells using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of precursor amorphous Si (a-Si) films on glass substrates by modulating their surface structures. The surface morphology of the poly-Si films can be easily controlled by conventional wet chemical etching using mixed acid of HF and HNO3, accompanied by effective reduction in optical reflectance. Solar cells with the best performance are obtained when the poly-Si films have the smallest surface roughness. This enhancement of the performance can be understood as the improved coverage of the poly-Si surface with post-deposited doping layers as well as the more effective anti-reflection effect caused by the wet etching.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114367200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
PbS quantum dots embedded TiO2 nanofibers for dye-sensitized solar cells PbS量子点嵌入TiO2纳米纤维用于染料敏化太阳能电池
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411617
P. Joshi, Lifeng Zhang, M. Siddiki, H. Fong, Jing Li, D. Galipeau, Q. Qiao
{"title":"PbS quantum dots embedded TiO2 nanofibers for dye-sensitized solar cells","authors":"P. Joshi, Lifeng Zhang, M. Siddiki, H. Fong, Jing Li, D. Galipeau, Q. Qiao","doi":"10.1109/PVSC.2009.5411617","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411617","url":null,"abstract":"We report a new type of dye-sensitized solar cells (DSSCs) fabricated using PbS quantum dots (QDs) embedded TiO2 fibers as the photoanodes. QDs have shown great potential as an efficient light absorbing material with very high extinction coefficient. However, to obtain an efficient photoinduced charge transfer from QDs to TiO2, a stable linker is needed to attach QDs to TiO2. Unlike Ru based or all-organic dyes having a carboxylic group to function as the linker, it is a challenge to establish a strong attachment between QDs and TiO2. In this work, we used electrospinning technique to form TiO2 nanofibers embedded with PbS QDs without the need of a carboxylic group or any other linker. The QDs embedded TiO2 nanofibers were mixed with an organic binder and then deposited onto fluorine-doped tin dioxide (FTO) glass substrates by doctor blading. To harvest both visible and infrared light, the photoanodes were further sensitized with a Ru complex dye (Z-907). DSSC devices were fabricated using platinum as a counter-electrode catalyst for triiodide reduction. The cells achieved overall energy conversion efficiency of 2.8 % with Voc =0.81V and FF=0.61 under illumination of 100 mW/cm2 with an AM 1.5 filter.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114588599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemical and electrical properties of ZnTe based solar cells ZnTe基太阳能电池的化学和电学性质
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411244
F. Fang, B. McCandless, R. Opila
{"title":"Chemical and electrical properties of ZnTe based solar cells","authors":"F. Fang, B. McCandless, R. Opila","doi":"10.1109/PVSC.2009.5411244","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411244","url":null,"abstract":"ZnTe is a candidate low-cost II-VI absorber material of wide band gap (EG = 2.24 eV) with potential of enhanced open circuit voltage and application for tandem cells. Fundamental chemical and electronic properties related to the processing of ZnTe-based devices are demonstrated. We used x-ray diffraction, scanning electron microscopy and photoemission spectroscopy to analyze film structure, morphology, chemical composition and valence band structure of ZnTe/ZnSe films deposited sequential close space sublimation. Specifically, interfacial Se oxide was observed and caused band offsets apparent in the heterojunction band energy diagram. Processing steps to mitigate oxidation yielded the best cells.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122042984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Multiple junction cell characterization using the LBIC method: early results, issues, and pathways to improvement 使用LBIC方法的多结细胞表征:早期结果、问题和改进途径
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411621
Jason R. Finn, B. Hansen, J. Granata
{"title":"Multiple junction cell characterization using the LBIC method: early results, issues, and pathways to improvement","authors":"Jason R. Finn, B. Hansen, J. Granata","doi":"10.1109/PVSC.2009.5411621","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411621","url":null,"abstract":"A Light Beam Induced Current (LBIC) measurement is a non-destructive technique that produces a spatial graphical representation of current response in photovoltaic cells with respect to position when stimulated by a light beam. Generally, a laser beam is used for these measurements because the spot size can be made very small, on the order of microns, and very precise measurements can be made. Sandia National Laboratories Photovoltaic System Evaluation Laboratory (PSEL) uses its LBIC measurement technique to characterize single junction mono-crystalline and multi-crystalline solar cells ranging from miniature to conventional sizes. Sandia has modified the already valuable LBIC technique to enable multi-junction PV cells to be characterized.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129523620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Electrical mismatch within single junction amorphous silicon and micromorph tandem thin film PV modules 单结非晶硅和微晶串联薄膜光伏组件的电不匹配
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411142
Y.N. Qiu, T. Betts, R. Gottschalg
{"title":"Electrical mismatch within single junction amorphous silicon and micromorph tandem thin film PV modules","authors":"Y.N. Qiu, T. Betts, R. Gottschalg","doi":"10.1109/PVSC.2009.5411142","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411142","url":null,"abstract":"Due to the electrical mismatch between the individual cells, the actual efficiency of a PV module is always lower than the sum of the cells under normal measurement conditions. The effect of this electrical mismatch is simulated for single junction amorphous silicon PV modules as well as micromorph thin film PV modules. This paper reports on the design of the realistic parameter distribution for the I-V simulation. It shows that due to the current mismatch in a double junction solar cell, these devices seem to be more significantly affected by similar variation in parameters, which would indicate that tighter production control is necessary but also that it will be more involved to measure these devices with sufficient accuracy. It is shown that device mismatch actually results in a lower fill factor, which is slightly different to what is seen for single cells.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129866168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Deposition of CuInAlSe2 films using co-sputtered precursors and selenization 用共溅射前驱体和硒化法制备CuInAlSe2薄膜
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411687
D. Dwyer, I. Repins, H. Efstathiadis, P. Haldar
{"title":"Deposition of CuInAlSe2 films using co-sputtered precursors and selenization","authors":"D. Dwyer, I. Repins, H. Efstathiadis, P. Haldar","doi":"10.1109/PVSC.2009.5411687","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411687","url":null,"abstract":"CuInAl precursor films with varying Al/(Al+In) ratios were co-sputtered onto Mo coated soda-lime glass substrates. Samples were then selenized under high vacuum using thermally evaporated elemental selenium. Single-step and two-step selenization heating profiles were investigated. Single-step samples resulted in better Mo-CuInAlSe2 adhesion than those selenized using the two-step approach. Precursor and selenized films were characterized for composition, crystalline structure, surface morphology, and composition with depth. The development of a method to co-sputtered CuInAl precursors is discussed, as well as the effect of selenization temperature and heating profile on selenized film properties.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"23 25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128440102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Numerical simulations of novel InGaN solar cells 新型InGaN太阳能电池的数值模拟
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411535
G. Brown, J. Ager, W. Walukiewicz, J. Wu
{"title":"Numerical simulations of novel InGaN solar cells","authors":"G. Brown, J. Ager, W. Walukiewicz, J. Wu","doi":"10.1109/PVSC.2009.5411535","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411535","url":null,"abstract":"Finite element simulations of novel InGaN solar cells, requiring no p-type InGaN, were carried out using the commercial software package APSYS. Simulations show that efficient, compositionally graded p-GaN/n-InxGa1−xN solar cells can be achieved, provided the graded layer is confined within the depletion region. These compositionally graded solar cells can be used as the top cell in an InGaN/Si double-junction cell to achieve AM 1.5 efficiencies over 27% using realistic material parameters.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128756070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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