用共溅射前驱体和硒化法制备CuInAlSe2薄膜

D. Dwyer, I. Repins, H. Efstathiadis, P. Haldar
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引用次数: 6

摘要

将不同Al/(Al+In)比例的CuInAl前驱体膜共溅射到Mo涂层钠石灰玻璃衬底上。然后用热蒸发硒元素在高真空条件下进行硒化。研究了单步和两步硒化加热曲线。单步处理的样品比两步处理的样品具有更好的Mo-CuInAlSe2粘附性。对前驱体和硒化膜的组成、晶体结构、表面形貌和深度组成进行了表征。讨论了共溅射制备CuInAl前驱体的方法,以及硒化温度和加热方式对硒化膜性能的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deposition of CuInAlSe2 films using co-sputtered precursors and selenization
CuInAl precursor films with varying Al/(Al+In) ratios were co-sputtered onto Mo coated soda-lime glass substrates. Samples were then selenized under high vacuum using thermally evaporated elemental selenium. Single-step and two-step selenization heating profiles were investigated. Single-step samples resulted in better Mo-CuInAlSe2 adhesion than those selenized using the two-step approach. Precursor and selenized films were characterized for composition, crystalline structure, surface morphology, and composition with depth. The development of a method to co-sputtered CuInAl precursors is discussed, as well as the effect of selenization temperature and heating profile on selenized film properties.
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