Numerical simulations of novel InGaN solar cells

Abstract

Finite element simulations of novel InGaN solar cells, requiring no p-type InGaN, were carried out using the commercial software package APSYS. Simulations show that efficient, compositionally graded p-GaN/n-InxGa1−xN solar cells can be achieved, provided the graded layer is confined within the depletion region. These compositionally graded solar cells can be used as the top cell in an InGaN/Si double-junction cell to achieve AM 1.5 efficiencies over 27% using realistic material parameters.