新型InGaN太阳能电池的数值模拟

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI:10.1109/PVSC.2009.5411535

G. Brown, J. Ager, W. Walukiewicz, J. Wu

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引用次数: 5

摘要

利用商业软件包APSYS对不需要p型InGaN的新型InGaN太阳能电池进行了有限元模拟。模拟结果表明，只要梯度层被限制在耗尽区内，就可以实现高效、成分梯度的p-GaN/n-InxGa1−xN太阳能电池。这些成分渐变的太阳能电池可以用作InGaN/Si双结电池的顶部电池，使用现实的材料参数，实现am1.5效率超过27%。

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Numerical simulations of novel InGaN solar cells

Finite element simulations of novel InGaN solar cells, requiring no p-type InGaN, were carried out using the commercial software package APSYS. Simulations show that efficient, compositionally graded p-GaN/n-InxGa1−xN solar cells can be achieved, provided the graded layer is confined within the depletion region. These compositionally graded solar cells can be used as the top cell in an InGaN/Si double-junction cell to achieve AM 1.5 efficiencies over 27% using realistic material parameters.

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2009 34th IEEE Photovoltaic Specialists Conference (PVSC)

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