{"title":"ZnTe基太阳能电池的化学和电学性质","authors":"F. Fang, B. McCandless, R. Opila","doi":"10.1109/PVSC.2009.5411244","DOIUrl":null,"url":null,"abstract":"ZnTe is a candidate low-cost II-VI absorber material of wide band gap (EG = 2.24 eV) with potential of enhanced open circuit voltage and application for tandem cells. Fundamental chemical and electronic properties related to the processing of ZnTe-based devices are demonstrated. We used x-ray diffraction, scanning electron microscopy and photoemission spectroscopy to analyze film structure, morphology, chemical composition and valence band structure of ZnTe/ZnSe films deposited sequential close space sublimation. Specifically, interfacial Se oxide was observed and caused band offsets apparent in the heterojunction band energy diagram. Processing steps to mitigate oxidation yielded the best cells.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Chemical and electrical properties of ZnTe based solar cells\",\"authors\":\"F. Fang, B. McCandless, R. Opila\",\"doi\":\"10.1109/PVSC.2009.5411244\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ZnTe is a candidate low-cost II-VI absorber material of wide band gap (EG = 2.24 eV) with potential of enhanced open circuit voltage and application for tandem cells. Fundamental chemical and electronic properties related to the processing of ZnTe-based devices are demonstrated. We used x-ray diffraction, scanning electron microscopy and photoemission spectroscopy to analyze film structure, morphology, chemical composition and valence band structure of ZnTe/ZnSe films deposited sequential close space sublimation. Specifically, interfacial Se oxide was observed and caused band offsets apparent in the heterojunction band energy diagram. Processing steps to mitigate oxidation yielded the best cells.\",\"PeriodicalId\":411472,\"journal\":{\"name\":\"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2009.5411244\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2009.5411244","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Chemical and electrical properties of ZnTe based solar cells
ZnTe is a candidate low-cost II-VI absorber material of wide band gap (EG = 2.24 eV) with potential of enhanced open circuit voltage and application for tandem cells. Fundamental chemical and electronic properties related to the processing of ZnTe-based devices are demonstrated. We used x-ray diffraction, scanning electron microscopy and photoemission spectroscopy to analyze film structure, morphology, chemical composition and valence band structure of ZnTe/ZnSe films deposited sequential close space sublimation. Specifically, interfacial Se oxide was observed and caused band offsets apparent in the heterojunction band energy diagram. Processing steps to mitigate oxidation yielded the best cells.
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