发布求助
文献互助 智能选刊 最新文献

2009 34th IEEE Photovoltaic Specialists Conference (PVSC)最新文献

筛选
英文 中文
A review of the challenges facing kesterite based thin film solar cells kesterite基薄膜太阳能电池面临的挑战综述
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411441
P. Dale, Katja Hoenes, J. Scragg, S. Siebentritt
{"title":"A review of the challenges facing kesterite based thin film solar cells","authors":"P. Dale, Katja Hoenes, J. Scragg, S. Siebentritt","doi":"10.1109/PVSC.2009.5411441","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411441","url":null,"abstract":"The best literature reported kesterite sulfide Cu<inf>2</inf>ZnSnS<inf>4</inf> and selenide Cu<inf>2</inf>ZnSnS<inf>4</inf> thin film solar cell device performance and photocurrent spectra have been compared with their analogous chalcopyrite CulnS<inf>2</inf> and CulnSe<inf>2</inf> devices. Reasons for the kesterites worse performance have been analyzed in terms of (i) phase composition and morphology (ii) opto-electronic properties and (iii) layer interfaces. A new electrodepositon and annealing process is presented for producing Cu<inf>2</inf>ZnSnS<inf>4</inf> absorber layers that gave a highest power conversion efficiency of over 3.2 %. Furthermore photoluminescence spectra of Cu<inf>2</inf>ZnSnS<inf>4</inf> single crystals showing defect related is presented for the first time.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121634518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Thin silicon solar cells using epitaxial lateral overgrowth structure 采用外延横向过度生长结构的薄硅太阳能电池
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411132
R. Hao, C. Murcia, T. Creazzo, T. Biegala, Anthony Lochtefeld, Ji-Soo Park, C. Honsberg, A. Barnett
{"title":"Thin silicon solar cells using epitaxial lateral overgrowth structure","authors":"R. Hao, C. Murcia, T. Creazzo, T. Biegala, Anthony Lochtefeld, Ji-Soo Park, C. Honsberg, A. Barnett","doi":"10.1109/PVSC.2009.5411132","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411132","url":null,"abstract":"Thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in this paper should demonstrate higher voltage. PC-1D program has been used to study the open circuit voltage and efficiency as a function of the thin Si thickness and light trapping. According to the simulation results, high voltage can be obtained even without light trapping on the backside of the thin Si layer. Thin n type silicon layer has been grown on p+ Si substrate using the method of epitaxial lateral overgrowth by CVD. The scanning electron microscopy (SEM) has been used to show the dimension of the pn junction region and light generation region after the n type Si growth.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122767716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
An evaluation method for smoothing effect on photovoltaic systems dispersed in a large area 一种大面积分散光伏系统平滑效果的评价方法
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411366
T. Oozeki, K. Otani, T. Takashima, Y. Hishikawa, G. Koshimizu, Y. Uchida, K. Ogimoto
{"title":"An evaluation method for smoothing effect on photovoltaic systems dispersed in a large area","authors":"T. Oozeki, K. Otani, T. Takashima, Y. Hishikawa, G. Koshimizu, Y. Uchida, K. Ogimoto","doi":"10.1109/PVSC.2009.5411366","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411366","url":null,"abstract":"PV is expected as a major carbon-free primary energy source which is inevitable to proceed to a carbon-free economy. However, as a variable power source, the large PV's penetration into the power system may cause various kinds of power system operation issues and/or expansion needs. In order to technically-and economically-feasible solution for these issues and needs, it is quite important to quantitatively analyze and evaluate the variation of PV generation. This paper will present the smoothing effect of the total PV generation output in a broad area by means of the maximum output fluctuation as fluctuation index.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123083784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Multi-gigawatt thin film PV 千兆瓦的薄膜光伏
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411347
K. Zweibel
{"title":"Multi-gigawatt thin film PV","authors":"K. Zweibel","doi":"10.1109/PVSC.2009.5411347","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411347","url":null,"abstract":"Thin films are reaching 1-GW annual production because of the success of one company and technology, First Solar CdTe. Other thin films languish, with amorphous and thin film silicon still restrained by low efficiencies; and CIS yet to demonstrate sufficient volume production. Will the future of thin films be only the future of CdTe? Yet even with commercial success, CdTe must also compete with crystalline silicon, which has taken a big step forward with the end of the silicon feedstock problem. What then is the true competitive position of crystalline silicon and CdTe? Still, PV is not alone in providing us with alternative energy. Arguably, the key qualities are non-CO2 production and the potential to make terawatts. PV will compete with solar thermal electric, wind, nuclear, and carbon sequestered fossil fuels to ameliorate the greenhouse effect and energy dependencies. How does PV stack up? And how does intermittency make this competition even harder for PV? One thing is certain, PV costs must continue to drop, because true success in the marketplace will be hard won.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121111489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dual focus Cassegrainian module can achieve ≫45% efficiency 双焦点Cassegrainian模块可以达到45%的效率
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411226
L. Fraas, J. Avery, J. Strauch, G. Girard
{"title":"Dual focus Cassegrainian module can achieve ≫45% efficiency","authors":"L. Fraas, J. Avery, J. Strauch, G. Girard","doi":"10.1109/PVSC.2009.5411226","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411226","url":null,"abstract":"Various types of multijunction solar cells have now been demonstrated with energy conversion efficiencies over 40%. Higher cell efficiencies are still possible. NREL, Fraunhoffer and others have announced ≫40% Inverted metamorphic triple-junction (IMMTJ) InGaP/GaAs/GaInAs cells. One key feature of these cells is that the lowest bandgap cell is no longer a Ge cell. The IMMTJ lowest cell bandgap now allows for a 4th junction cell either integrated or separate. Herein, it is observed that the dual focus Cassegrainian (DFC) module can be fitted with a InGaP/GaAsP/InGaAs triple junction cell at its primary focus and with a GaSb or other IR sensitive cell at its secondary focus. This can allow a straight forward rapid path to a combined cell efficiency of ≫44%. The potential advantages of this configuration are, first, a rapid path to a combined cell efficiency of 44%, and second, given the fact that the heat load is divided into two locations, both cells will run cooler giving a higher module efficiency.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115287172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Investigation of aluminum induced degradation in sputtered Al:ZnO for CIGS solar cells applications 用于CIGS太阳能电池的溅射Al:ZnO中铝诱导降解研究
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411667
Jie Pan, L. Kerr, Xiaonan Li, Heather J. Gulley-Stahl, A. Sommer
{"title":"Investigation of aluminum induced degradation in sputtered Al:ZnO for CIGS solar cells applications","authors":"Jie Pan, L. Kerr, Xiaonan Li, Heather J. Gulley-Stahl, A. Sommer","doi":"10.1109/PVSC.2009.5411667","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411667","url":null,"abstract":"The long term performance of Cu (In,Ga)Se2 (CIGS) solar cells were strongly affected by their ability in withstanding surrounding weather change, including temperature, humidity, and light, etc. In our experiment, we focused on the stability study of window layer materials of undoped ZnO (IZO) and Al:ZnO (AZO) using damp heat and dry heat treatment. We found that the Al dopant had enhanced the capture of moisture in ZnO, and thus caused the degradation in film optical, morphological and electrical properties.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120977498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Exploring diagnostic capabilities for application to new photovoltaic technologies 探索应用于新光伏技术的诊断能力
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411471
E. Quintana, M. Quintana, Kevin D. Rolfe, K. Thompson, P. Hacke
{"title":"Exploring diagnostic capabilities for application to new photovoltaic technologies","authors":"E. Quintana, M. Quintana, Kevin D. Rolfe, K. Thompson, P. Hacke","doi":"10.1109/PVSC.2009.5411471","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411471","url":null,"abstract":"Explosive growth in photovoltaic markets has fueled new creative approaches that promise to cut costs and improve reliability of system components. However, market demands require rapid development of these new and innovative technologies in order to compete with more established products and capture market share. Oftentimes diagnostics that assist in R&D do not exist or have not been applied due to the innovative nature of the proposed products. Some diagnostics such as IR imaging, electroluminescence, light IV, dark IV, x-rays, and ultrasound have been employed in the past and continue to serve in development of new products, however, innovative products with new materials, unique geometries, and previously unused manufacturing processes require additional or improved test capabilities. This fast-track product development cycle requires diagnostic capabilities to provide the information that confirms the integrity of manufacturing techniques and provides the feedback that can spawn confidence in process control, reliability and performance. This paper explores the use of digital radiography and computed tomography (CT) with other diagnostics to support photovoltaic R&D and manufacturing applications.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123822412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
High efficiency solar cells based on AlInGaP 基于AlInGaP的高效太阳能电池
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411214
R. Campesato, M. Casale, G. Gori, G. Gabetta, R. Colletto, S. Taylor
{"title":"High efficiency solar cells based on AlInGaP","authors":"R. Campesato, M. Casale, G. Gori, G. Gabetta, R. Colletto, S. Taylor","doi":"10.1109/PVSC.2009.5411214","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411214","url":null,"abstract":"Aim of this work, is the study of the properties of Aluminium Gallium Indium Phosphide for the realization of the next generation high-efficiency multi-junction (MJ) solar cells. (AlxGa1-x)0.50In0.50P (AlInGaP) is a semiconductor with a high direct bandgap that can be tuned between 1.81eV and 2.00eV varying the Al content in the range 0≪x≤0.12. This makes AlInGaP one of the most promising candidates for the manufacture of the top junction layers in multi-junction solar cells. In a five junction structure AlInGaP/InGaP/AlInGaAs/InGaAs/Ge, the use of AlInGaP with high Al content may lead to solar cells with maximum theoretical efficiencies above 40% in AM0 conditions. In this paper, we report the results of the material characterization we have carried out on AlInGaP single junction (SJ) solar cells grown by MOCVD, highlighting its electrical and optical behaviour as a function of the Aluminium content. The best performing cell we have obtained so far showed an open circuit voltage of 1.473V, and a short circuit current of 15mA/cm2.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116602855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of photovoltaics in the Central and Eastern European States 中欧和东欧国家的光伏发展
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411692
S. Pietruszko, K. Błażejewska, D. Maļinovska, P. Vitanov, A. Stylianides, P. Klimek, E. Mellikov, M. Pálfy, P. Shipkovs, A. Krotkus, P. Mifsud, D. Teodoreanu, Z. Voderadska, F. Nemac
{"title":"Development of photovoltaics in the Central and Eastern European States","authors":"S. Pietruszko, K. Błażejewska, D. Maļinovska, P. Vitanov, A. Stylianides, P. Klimek, E. Mellikov, M. Pálfy, P. Shipkovs, A. Krotkus, P. Mifsud, D. Teodoreanu, Z. Voderadska, F. Nemac","doi":"10.1109/PVSC.2009.5411692","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411692","url":null,"abstract":"Development of PV technology in the twelve Central and Eastern European States (CEES) that joined the European Union after 2004 is crucial considering the EU target to raise the share of renewable energy sources in a total energy mix up to 20% by 2020. Data collected through the cooperation of over twelve national institutes and research centers from CEES, furnished, for the sixth time, the report on the status of PV in the new EU member states. It shows diversity of PV CEES markets, conditioned by original energy market profile, territory's irradiation, legal order, administrative procedures and investment support mechanisms. Despite the fact that majority of CEES is at the initial stage of PV development process and PV technology market introduction difficulties, considerable progress can be observed in many of them. In order to render PV technology more attractive for investors it is vital to support market incentives, RTD, dissemination and education activities within CEES.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125271685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Organic solar cells with a blend of two solution processable electron acceptors, C60(CN)2 and PCBM 两种溶液可加工电子受体C60(CN)2和PCBM混合的有机太阳能电池
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411243
V. R. Koppolu, M. Gupta, W. Bagienski, Yang Shen, Chun-ying Shu, H. Gibson, H. Dorn
{"title":"Organic solar cells with a blend of two solution processable electron acceptors, C60(CN)2 and PCBM","authors":"V. R. Koppolu, M. Gupta, W. Bagienski, Yang Shen, Chun-ying Shu, H. Gibson, H. Dorn","doi":"10.1109/PVSC.2009.5411243","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411243","url":null,"abstract":"Organic solar cells based on bulk heterojunction (BHJ) structure fabricated by blending conjugated polymers with fullerenes have resulted in great improvements in the energy conversion efficiencies in recent years. PCBM ([6,6]-phenyl-C61-butyric acid methyl ester), a fullerene derivative, has been extensively investigated as a solution processable electron acceptor for BHJ photovoltaic devices blended with conjugate polymers like P3HT [poly(3-hexylthiophene)]. We investigated a novel solution processable organic semiconductor, C60(CN)2 as an electron acceptor and blends with PCBM for BJH photovoltaic applications . The effect of ratios of PCBM and C60(CN)2 on the optical absorption spectra, open circuit voltage, short circuit current, fill factor, efficiency and morphology is investigated. Thermal annealing has shown a significant improvement in the device performance.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125665054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信