{"title":"kesterite基薄膜太阳能电池面临的挑战综述","authors":"P. Dale, Katja Hoenes, J. Scragg, S. Siebentritt","doi":"10.1109/PVSC.2009.5411441","DOIUrl":null,"url":null,"abstract":"The best literature reported kesterite sulfide Cu<inf>2</inf>ZnSnS<inf>4</inf> and selenide Cu<inf>2</inf>ZnSnS<inf>4</inf> thin film solar cell device performance and photocurrent spectra have been compared with their analogous chalcopyrite CulnS<inf>2</inf> and CulnSe<inf>2</inf> devices. Reasons for the kesterites worse performance have been analyzed in terms of (i) phase composition and morphology (ii) opto-electronic properties and (iii) layer interfaces. A new electrodepositon and annealing process is presented for producing Cu<inf>2</inf>ZnSnS<inf>4</inf> absorber layers that gave a highest power conversion efficiency of over 3.2 %. Furthermore photoluminescence spectra of Cu<inf>2</inf>ZnSnS<inf>4</inf> single crystals showing defect related is presented for the first time.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"A review of the challenges facing kesterite based thin film solar cells\",\"authors\":\"P. Dale, Katja Hoenes, J. Scragg, S. Siebentritt\",\"doi\":\"10.1109/PVSC.2009.5411441\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The best literature reported kesterite sulfide Cu<inf>2</inf>ZnSnS<inf>4</inf> and selenide Cu<inf>2</inf>ZnSnS<inf>4</inf> thin film solar cell device performance and photocurrent spectra have been compared with their analogous chalcopyrite CulnS<inf>2</inf> and CulnSe<inf>2</inf> devices. Reasons for the kesterites worse performance have been analyzed in terms of (i) phase composition and morphology (ii) opto-electronic properties and (iii) layer interfaces. A new electrodepositon and annealing process is presented for producing Cu<inf>2</inf>ZnSnS<inf>4</inf> absorber layers that gave a highest power conversion efficiency of over 3.2 %. Furthermore photoluminescence spectra of Cu<inf>2</inf>ZnSnS<inf>4</inf> single crystals showing defect related is presented for the first time.\",\"PeriodicalId\":411472,\"journal\":{\"name\":\"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2009.5411441\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2009.5411441","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A review of the challenges facing kesterite based thin film solar cells
The best literature reported kesterite sulfide Cu2ZnSnS4 and selenide Cu2ZnSnS4 thin film solar cell device performance and photocurrent spectra have been compared with their analogous chalcopyrite CulnS2 and CulnSe2 devices. Reasons for the kesterites worse performance have been analyzed in terms of (i) phase composition and morphology (ii) opto-electronic properties and (iii) layer interfaces. A new electrodepositon and annealing process is presented for producing Cu2ZnSnS4 absorber layers that gave a highest power conversion efficiency of over 3.2 %. Furthermore photoluminescence spectra of Cu2ZnSnS4 single crystals showing defect related is presented for the first time.