2009 34th IEEE Photovoltaic Specialists Conference (PVSC)最新文献_第9页

Anomalous photoconductivity variations of solar cell quality a-Si:H thin films induced by proton irradiation 质子辐照诱导太阳电池质量a-Si:H薄膜的异常光导变化

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411322

Shin‐ichiro Sato, H. Sai, M. Imaizumi, K. Shimazaki, M. Kondo, T. Ohshima

引用次数: 1

Comparison of transparent back contacts for CdTe top cells in tandem thin-film photovoltaic devices 串联薄膜光伏器件中CdTe顶电池透明背触点的比较

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411282

J. Duenow, T. Barnes, R. Dhere, J. Bergeson, Brian A. Larson, J. Blackburn, A. Duda, G. Teeter, T. Gessert

引用次数: 5

Designing amorphous silicon based solar cell structure on plastic 非晶硅基塑料太阳能电池结构设计

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411232

J. Rath, M. Brinza, R. Schropp

{"title":"Designing amorphous silicon based solar cell structure on plastic","authors":"J. Rath, M. Brinza, R. Schropp","doi":"10.1109/PVSC.2009.5411232","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411232","url":null,"abstract":"Fabrication of solar cells on cheap plastics, due to its demand for a low temperature processing (∼100 °C) needs adaptation of the cell structure of the state-of-the-art high efficiency thin film silicon solar cells made at high temperature (200 °C). Use of a double n-layer (n-µc-Si/n-a-Si) instead of a single n-µc-Si layer improves Voc from a low 0.66V to 0.82V in the as deposited state of an n-i-p type a-Si cell made at 100 °C. In a high temperature deposited cell, where a p-type µc-Si (band gap Eg =1.1 eV) is used in combination with a-Si i-layer (Eg =1.8 eV), a thin buffer a-Si layer made at 100 °C acts as a barrier for electron back diffusion from the i-layer. For the low temperature deposited i-layers this type of buffer layer loses its advantage of band offset and fails to stop the electron back diffusion. To verify this hypothesis, a-Si n-i-p cells were made with a heavily doped amorphous silicon p-layer at high hydrogen dilution (leaving out the ineffective buffer layer). We obtained indeed a high Voc of 0.89 V in as deposited state and after annealing at 100 °C the Voc reached 0.92 V. An efficiency of 6.6% was obtained for a cell made on a flat Ag/ZnO:Al back reflector (BR) on a glass substrate. A low current density of 12.5 mA/cm2 is attributed to the fact that it was a smooth BR. The high Voc of 0.92V was reproduced in a similar cell on stainless steel foil substrate. Cells with similar structure and deposition condition were fabricated on plastic substrates, namely polyethylene naphthalene (.PEN) and polyethylene terpthalate (PET). Deposition conditions of ZnO:Al by magnetron sputtering were adapted to reduce the deposition related stress on the plastic foil while the Ag layer was thermally evaporated. A comparable Voc of 0.89 V is obtained in as deposited state and 0.92 V after annealing. The cells on PEN and PET showed initial efficiencies of 6.3% and 5.9% respectively.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130402872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Design of quaternary chalcogenide photovoltaic absorbers through cation mutation 阳离子突变型季硫系光伏吸收剂的设计

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411555

A. Walsh, S. Wei, Shiyou Chen, X. Gong

{"title":"Design of quaternary chalcogenide photovoltaic absorbers through cation mutation","authors":"A. Walsh, S. Wei, Shiyou Chen, X. Gong","doi":"10.1109/PVSC.2009.5411555","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411555","url":null,"abstract":"Design of chalcogenide photovoltaic absorbers is carried out systematically through sequential cation mutation, from binary to ternary to quaternary compounds, using first-principles electronic structure calculations. Several universal trends are identified for two classes of quaternary chalcogenides (I2-II-IV-VI4 and I-III-II2-VI4 systems). For example, the lowest-energy structure always has larger lattice constant a, smaller tetragonal distortion parameter η = c/2a, and larger band gap than the metastable structures for common-row cation mutations. The band structure changes on mutation illustrate that although the band gap decreases from binary II-VI to ternary I-III-VI2 are mostly due to the p-d repulsion in the valence band, the decreases from ternary I-III-VI2 to quaternary I2-II-IV-VI4 chalcogenides are due to the downshift in the conduction band caused by the wavefunction localization on the group IV cation site. We find that I2-II-IV-VI4 compounds are more stable in the kesterite structure, whereas the widely-assumed stannite structure reported in the literature is most likely due to partial disorder in the I-II (001) layer of the kesterite phase. Ten compounds are predicted have band gaps close to the 1 to 2 eV energy window suitable for photovoltaics.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130463590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Nanomaterials in PV manufacture: Some life cycle environmental- and health-considerations 纳米材料在光伏制造:一些生命周期的环境和健康考虑

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411495

V. Fthenakis, H.C. Kim, S. Gualtero, A. Bourtsalas

引用次数: 12

A comparative LCA study on potential of very-large scale PV systems in Gobi desert 戈壁沙漠超大规模光伏系统潜力的比较LCA研究

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411180

Masakazu Ito, K. Komoto, K. Kurokawa

引用次数: 11

Mg-IV-V chalcopyrites in thin film tandem photovoltaic cells 薄膜串联光伏电池中的Mg-IV-V黄铜矿

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411251

M. van Schilfgaarde, N. Newman, T. Peshek, T. Coutts, T. Gessert

引用次数: 1

AlGaAs tunnel junction for high efficiency multi-junction solar cells: Simulation and measurement of temperature-dependent operation 用于高效多结太阳能电池的AlGaAs隧道结:温度依赖操作的模拟和测量

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411723

J. Wheeldon, C. Valdivia, A. Walker, G. Kolhatkar, T. Hall, K. Hinzer, D. Masson, S. Fafard, A. Jaouad, A. Turala, R. Arès, V. Aimez

引用次数: 19

A non-solvent extraction method for measuring gel content of ethylene vinyl acetate 一种测定醋酸乙烯凝胶含量的非溶剂萃取法

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411712

Z. Xia, D. Cunningham, J. Wohlgemuth

{"title":"A non-solvent extraction method for measuring gel content of ethylene vinyl acetate","authors":"Z. Xia, D. Cunningham, J. Wohlgemuth","doi":"10.1109/PVSC.2009.5411712","DOIUrl":"https://doi.org/10.1109/PVSC.2009.5411712","url":null,"abstract":"Uncured ethylene vinyl acetate (EVA) is a thermoplastics polymer that has a low glass transition temperature and melting point. To be suited for photovoltaic (PV) module application, EVA has to be cross-linked or cured into a thermoset polymer through the application of peroxide during the module fabrication process, e.g. lamination for crystalline silicon PV modules. A key means of monitoring the degree of cross-linking (or gel content) of EVA is through solvent extraction. Some of the commonly used solvents include toluene, tetrahydrofuran and xylene. These chemical extraction methods pose several drawbacks including HSE issues in dealing with chemicals, long turnaround time, high variation, and sometimes inaccurate gel measurements. Thus it is of great interest to the industry to develop an alternative EVA gel content method that can overcome the aforementioned shortcomings. In this paper, we report using differential scanning calorimetry (DSC) to measure the gel content of EVA. The result show that DSC is not only viable but also a fast and reliable method of measuring EVA gel content. Further, the method can also be used to monitor the peroxide level, type and curing kinetics in different EVAs. A comparison between DSC and solvent extraction method has been made.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125422908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Understanding kWh/kWp by comparing measured data with modelling predictions and performance claims 通过将测量数据与模型预测和性能声明进行比较，了解kWh/kWp

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI: 10.1109/PVSC.2009.5411643

S. Ransome

引用次数: 5