ZnMgO取代ZnO对ZnO/CdS/Cu(In,Ga)Se2太阳能电池的影响

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2009-06-07 DOI:10.1109/PVSC.2009.5411716

Jian V. Li, Xiaonan Li, A. Kanevce, Yanfa Yan, I. Repins

{"title":"ZnMgO取代ZnO对ZnO/CdS/Cu(In,Ga)Se2太阳能电池的影响","authors":"Jian V. Li, Xiaonan Li, A. Kanevce, Yanfa Yan, I. Repins","doi":"10.1109/PVSC.2009.5411716","DOIUrl":null,"url":null,"abstract":"We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The effect of ZnO replacement by ZnMgO ON ZnO/CdS/Cu(In,Ga)Se2 solar cells\",\"authors\":\"Jian V. Li, Xiaonan Li, A. Kanevce, Yanfa Yan, I. Repins\",\"doi\":\"10.1109/PVSC.2009.5411716\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.\",\"PeriodicalId\":411472,\"journal\":{\"name\":\"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2009.5411716\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2009.5411716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了用i-ZnMgO取代i-ZnO后Cu(In,Ga)Se2太阳能电池的电学性能和器件性能。导纳光谱揭示了一个归因于i-ZnMgO/CdS界面的深能级。电容电压实验表明，p-CIGS吸收体中的载流子浓度明显降低。在i-ZnMgO和CdS之间插入薄的i-ZnO层完全消除了界面态的不利影响，部分地恢复了载流子浓度的降低效应。器件仿真表明，由于载流子浓度降低，开路电压降低，而填充因子对界面缺陷敏感。

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The effect of ZnO replacement by ZnMgO ON ZnO/CdS/Cu(In,Ga)Se2 solar cells

We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.

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2009 34th IEEE Photovoltaic Specialists Conference (PVSC)

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