68th Device Research Conference最新文献_第4页

CMOS kink effect-induced instability in Al/AlOx single electron transistors Al/AlOx单电子晶体管中CMOS扭结效应引起的不稳定性

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551862

A. Prager, H. George, A. Orlov, G. Snider

引用次数: 0

4H-SiC DMOSFETs for power conversion applications successes and ongoing challenges 用于功率转换应用的4H-SiC dmosfet的成功和持续的挑战

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551909

Brett Hulla, J. Zhang, M. Das, S. Ryu, C. Jonas, S. Dhar, S. Haney, R. Callanan, J. Richmond

引用次数: 2

High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh 用于无像素刷新的静态有源矩阵OLED显示器的高保留时间非易失性非晶硅TFT存储器

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551896

Yifei Huang, B. Hekmatshoar, S. Wagner, J. Sturm

引用次数: 7

Gamma-ray irradiation of ZnO thin film transistors and circuits ZnO薄膜晶体管和电路的伽玛射线辐照

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551979

D. Zhao, D. Mourey, T. Jackson

引用次数: 5

Comparative analysis of the performance of InAs lateral and vertical band-to-band tunneling transistors 横向和垂直带对带隧道晶体管性能的比较分析

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551943

K. Ganapathi, Y. Yoon, S. Salahuddin

引用次数: 0

A quantum ring detector for the 1–3 terahertz range with very high responsivity and specific detectivity 一个量子环探测器为1-3太赫兹范围具有非常高的响应性和特定的探测

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551893

S. Bhowmick, G. Huang, W. Guo, C.S. Lee, P. Bhattachary, G. Ariyawansa, A. Perera

引用次数: 1

Nonreciprocal amplification of spin-wave signals 自旋波信号的非互易放大

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551853

M. Bao, Kin L. Wong, A. Khitun, Kang L. Wang

引用次数: 0

Thickness dependence of carrier mobility in mono- and bi-layer graphene with HfO2 gate dielectric 含HfO2栅极电介质的单层和双层石墨烯中载流子迁移率的厚度依赖性

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551928

B. Fallahazad, Seyoung Kim, L. Colombo, E. Tutuc

{"title":"Thickness dependence of carrier mobility in mono- and bi-layer graphene with HfO2 gate dielectric","authors":"B. Fallahazad, Seyoung Kim, L. Colombo, E. Tutuc","doi":"10.1109/DRC.2010.5551928","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551928","url":null,"abstract":"Graphene, a two-dimensional layer of carbon atoms in a honeycomb lattice, can potentially serve as an alternative channel material for future electronics technology owing to its high (> 10,000 cm2/Vs) intrinsic mobility. Understanding the carrier scattering mechanism in graphene devices with high-k dielectrics is key to enabling top dielectric-metal stacks that combine a high capacitance and high electron mobility. Here we provide a systematic study of carrier mobility as a function of HfO2 dielectric thickness, and as a function of temperature. Our results show that the carrier mobility decreases during the deposition of the first 2–4 nm of top dielectric, and remains constant for thicker layers. The carrier mobility dependence on temperature is relatively weak, indicating that phonon scattering does not play a dominant role in degrading the carrier mobility. The results strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation. We speculate that positively charged oxygen vacancies, ubiquitous in high-k dielectrics, are the mobility limiting factor.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132208352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of temperature on high frequency performance of graphene nano ribbon field effect transistor 温度对石墨烯纳米带场效应晶体管高频性能的影响

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551934

N. Meng, J. F. Fernandez, D. Vignaud, G. Dambrine, H. Happy

引用次数: 7

Majority and minority carrier mobility behavior and device modeling of doped CVD monolayer graphene transistors 掺杂CVD单层石墨烯晶体管的多数和少数载流子迁移行为及器件建模

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551929

O. Nayfeh, S. Kilpatrick, M. Dubey

{"title":"Majority and minority carrier mobility behavior and device modeling of doped CVD monolayer graphene transistors","authors":"O. Nayfeh, S. Kilpatrick, M. Dubey","doi":"10.1109/DRC.2010.5551929","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551929","url":null,"abstract":"Wafer-scale graphene synthesized by Chemical Vapor Deposition (CVD) has the potential to enable numerous advanced device and system capabilities [1–3]. The typical reported carrier mobility of CVD graphene is significantly lower than exfoliated or on-SiC material due potentially to different impurity/doping levels and material quality. Elucidating the potential carrier scattering sources in metal catalyzed CVD graphene is essential for realizing high mobility material for both holes and electrons. We constructed field effect transistors using Cu catalyzed LPCVD synthesized p-type doped monolayer graphene and used direct electrical measurements under ambient and vacuum conditions to analyze some important physical aspects of the majority and minority carrier mobility behavior. We measured a dependency between shifting of the Dirac Point directed towards neutral levels under soft vacuum/annealing conditions and an increase in the extracted low-field carrier mobility. Reduction in the effective p-type “doping” of the graphene results in an increase of the carrier mobility of both the minority electrons and majority holes, with a stronger majority carrier dependency. The measured I–V characteristics of the devices are modeled (in the scattering limited regime) using a simple drift/diffusion model implemented in a continuum simulator. Using this model, the effective doping density, carrier concentration, and mobility are extracted for electrons and holes. Analysis of the energy dependency of the carrier mean-free-path for back-scattering, suggests that the hole mobility in this CVD material is limited by large levels of Coulomb scattering, whereas the electron mobility is limited by a combination of both Coulomb and other shorter-range scattering.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130130125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4