68th Device Research Conference最新文献_第3页

Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α = 0.97 共基传输比为α = 0.97的InAlN/GaN/AlGaN热电子晶体管的室温工作和直流特性

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551877

S. Dasgupta, N. Nidhi, A. Raman, J. Speck, U. Mishra

引用次数: 0

Effects of nanoscale contacts to silicon nanowires on contact resistance: Characterization and Modeling 纳米尺度接触对硅纳米线接触电阻的影响:表征和建模

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551876

Joshua T. Smith, Yanjie Zhao, Chen Yang, J. Appenzeller

引用次数: 7

Flatband voltage tuning and EOT reduction for SiO2/HfO2/TiN gate stacks via lanthanum oxide capping layers using two different lanthanum precursors 使用两种不同的镧前驱体，通过氧化镧盖层实现SiO2/HfO2/TiN栅极堆的平带电压调谐和EOT降低

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551940

C. Chiang, H. Huang, C. Wu, J.F. Lin, C.C. Liu, C. Yang, J. Wu, S. Wang

{"title":"Flatband voltage tuning and EOT reduction for SiO2/HfO2/TiN gate stacks via lanthanum oxide capping layers using two different lanthanum precursors","authors":"C. Chiang, H. Huang, C. Wu, J.F. Lin, C.C. Liu, C. Yang, J. Wu, S. Wang","doi":"10.1109/DRC.2010.5551940","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551940","url":null,"abstract":"High-k dielectrics are crucial in scaled CMOS technology because their large physical thickness can suppress gate tunneling leakage current at a scaled equivalent oxide thickness (EOT). For the past decade, hafnium-based gate dielectrics (HfO2 or Hf-based oxides) have been introduced to mass-production by commercial chip-makers. In the meantime, metal gates were also explored to improve the poly-Si depletion effect polysilicon gate electrodes in high performance logic devices at 45 nm node technology and beyond. However, the development of metal gates with Fermi level near the Si band edges has been difficult on Hf-based gate dielectrics, which can be attributed to several possible factors including Fermi level pinning and interfacial dipole formation.[1,2] Recently, the use of thin cap layers that are inserted between the gate metal and dielectric has been shown to cause negative flatband voltage (Vfb) shift and stabilize low VTH simultaneously. A major challenge with cap layers is to achieve adequate effective work function shifts without large increases in EOT (ΔEOT). Atomic layer deposition (ALD) La2O3 cap layer is a promising candidate for n-channel devices due to its relatively high dielectric constant of ∼17 [3] and strong bond polarization. Essentially, ALD is one precursor dominated process [4], successful applications of ALD in advanced CMOS technology should depend on whether appropriate precursor can be utilized. In this work, effects of the La2O3 cap layer interposed in Si/SiO2/HfO2/TiN high-k gate dielectric stacks prepared from two different ALD lanthanum precursors, La(fAMD)3 and La(thd)3, in tuning Vfb and ΔEOT are investigated. The values of ΔVfb and ΔEOT as high as 0.45 V and 0.055 nm were achieved by a 1-nm-thick La2O3 cap layer.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129719380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

InGaN/GaN nanowire green light emitting diodes on (001) Si substrates (001) Si衬底上的InGaN/GaN纳米线绿色发光二极管

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551984

Meng Zhang, Wei Guo, A. Banerjee, P. Bhattacharya

引用次数: 3

A charge-trapping memory structure featuring low-voltage high-speed operation and 250 °C retention 一种具有低压高速运行和250°C保持的电荷捕获存储器结构

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551969

C. Peng, W.Q. Zhang, X. Sun, Z.G. Liu, S. Cui, T. Ma, L. Kornblum, M. Eizenberg

引用次数: 0

Enhanced responsivity in a novel AlGaN / GaN plasmon-resonant terahertz detector using gate-dipole antenna with parasitic elements 基于寄生元件栅极偶极天线的新型AlGaN / GaN等离子共振太赫兹探测器的响应性增强

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551895

T. Tanigawa, T. Onishi, S. Takigawa, T. Otsuji

引用次数: 42

Programmable nanomagnet-logic majority gate 可编程纳米磁体逻辑多数门

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551921

E. Varga, M. Niemier, G. Bernstein, W. Porod, X. S. Hu

引用次数: 17

Tellurium δ-doped 120nm AlSb/InAs HEMTs: towards sub-100mV electronics 碲δ掺杂120nm AlSb/InAs hemt:迈向亚100mv电子学

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551945

Y. Roelens, A. Olivier, L. Desplanque, A. Noudéviwa, F. Danneville, N. Wichmann, X. Wallart, S. Bollaert

引用次数: 5

Backside gate thin film transistor based on MOCVD grown ZnO on SiO2/Si substrates 在SiO2/Si衬底上生长ZnO的MOCVD后栅薄膜晶体管

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551981

Jens-Peter Biethan, B. Bayraktaroglu, L. Considine, D. Pavlidis

{"title":"Backside gate thin film transistor based on MOCVD grown ZnO on SiO2/Si substrates","authors":"Jens-Peter Biethan, B. Bayraktaroglu, L. Considine, D. Pavlidis","doi":"10.1109/DRC.2010.5551981","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551981","url":null,"abstract":"Zinc oxide (ZnO) is a direct bandgap (Eg= 3.36 eV) semiconductor with a large exciton binding energy (60 meV), exhibiting near UV emission, transparent conductivity and piezoelectricity. It also has comparable to GaN high saturation velocity and better radiation hardness. Furthermore, ZnO is bio-safe and biocompatible, and may be also used for biomedical applications. Because of its unique properties, ZnO has recently attracted strong attention. Its applications vary from sensors and piezoelectric mechanical systems, to optical and electrical components. Interest in transparent displays has prompted a significant increase in studies of thin film transistors (TFTs) [1]. Compared to the widely used amorphous silicon displays, ZnO offers a major advantage in terms of significantly higher carrier mobility and excellent electrical and optical properties [2, 3]. Various reports addressed Metalorganic Chemical Vapor Deposition (MOCVD) grown ZnO layers, but only few results exist on TFTs [e.g. 4, 5]. MOCVD is a well established technique and has already become the dominant process for the manufacture of laser diodes, solar cells, LEDs and transistors. One particular advantage of the use of MOCVD ZnO growth for industry applications is the capability of using large size substrates at a relatively low cost-value ratio.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130447722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators 用于高频集成振荡器的纳米机电振动体FET谐振器

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551898

D. Grogg, A. Lovera, A. Ionescu

引用次数: 3