C. Peng, W.Q. Zhang, X. Sun, Z.G. Liu, S. Cui, T. Ma, L. Kornblum, M. Eizenberg
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A charge-trapping memory structure featuring low-voltage high-speed operation and 250 °C retention
We have demonstrated that MAD-Al2O3 is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250C retention, which we believe is exceptional and unprecedented. The process simplicity is also an attractive feature, making the MANAS structure viable for future generations of non-volatile memories.
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