68th Device Research Conference最新文献

Polarization-engineered N-face III–V nitride quantum well LEDs 偏振工程n-面III-V氮化物量子阱led

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551987

J. Verma, J. Simon, V. Protasenko, G. Xing, D. Jena

引用次数: 0

Fabrication of axially-doped silicon nanowire tunnel FETs and characterization of tunneling current 轴向掺杂硅纳米线隧道场效应管的制备及隧道电流的表征

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551962

A. Vallett, S. Minassian, S. Datta, J. Redwing, T. Mayer

引用次数: 0

Computation with quantum systems 量子系统的计算

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551926

D. Wineland

引用次数: 0

Thermal effects in oxide TfTs 氧化物tft中的热效应

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551976

D. Mourey, D. Zhao, Ho Him R. Fok, Yuanyuan Li, T. Jackson

{"title":"Thermal effects in oxide TfTs","authors":"D. Mourey, D. Zhao, Ho Him R. Fok, Yuanyuan Li, T. Jackson","doi":"10.1109/DRC.2010.5551976","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551976","url":null,"abstract":"Oxide semiconductor electronics may enable new applications including large-area, flexible, integrated systems. ZnO thin film transistors have been reported with field-effect mobility > 100 cm<sup>2</sup>/V·s, on-current density > 700 mA/mm, and microwave operation (f<inf>T</inf> > 2 GHz, f<inf>max</inf> > 7 GHz) for ZnO deposited by pulsed laser deposition at 400°C.[1] Other oxide semiconductors, including amorphous and crystalline mixtures of I<inf>2</inf>O<inf>3</inf>, Ga<inf>2</inf>O<inf>3</inf>, ZnO, have also been widely studied, and high mobility (> 30 cm<sup>2</sup>/V·s) thin film transistors and circuits with propagation delays < 1 ns/stage have been reported.[2,3] However, most of these high performance demonstrations were done on single crystal semiconductor substrates with high thermal conductivity. Here we find that self-heating and not drain-induced barrier lowering as previously reported [1] is the physical mechanism responsible for the output conductance (g<inf>d</inf> = dI<inf>DS</inf>/dV<inf>DS</inf>) observed in a range of oxide thin film transistors. In particular we find that self-heating is a significant limiting factor for the performance of oxide devices and circuits on low-cost, low-thermal conductivity substrates such as glass and plastic.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129081095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering 基于带隙工程的石墨烯纳米带异质结隧道场效应管器件性能计算研究

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551931

K. Lam, H. Da, S. Chin, G. Samudra, Y. Yeo, G. Liang

引用次数: 0

Spin torques estimation and magnetization dynamics in dual barrier resonant tunneling penta-layer magnetic tunnel junctions 双势垒共振隧道五层磁隧道结的自旋转矩估计和磁化动力学

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551855

N. Mojumder, C. Augustine, D. Nikonov, K. Roy

{"title":"Spin torques estimation and magnetization dynamics in dual barrier resonant tunneling penta-layer magnetic tunnel junctions","authors":"N. Mojumder, C. Augustine, D. Nikonov, K. Roy","doi":"10.1109/DRC.2010.5551855","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551855","url":null,"abstract":"We investigate electronic transport and magnetization dynamics associated with current induced spin-torque effects in dual barrier magnetic tunnel junctions using Non-Equilibrium Green's Function formalism and Landau-Lifshitz- Gilbert (LLG) equation self-consistently. In a dual barrier penta-layer MTJ, a set of geometry and band-structure parameters including the free-layer thickness, oxide barrier height, width of the tunneling barrier and applied voltage jointly determines the position of resonant peaks and valleys within the energy range of interest. The combined effect of these design parameters to enhance the in-plane and out-of-plane spin-torque efficiencies in both aligned and anti-aligned penta-layer MTJs [Fig. 1] has been studied comprehensively. We quantify the impact of non-monotonic quantum well states for majority and minority spin electrons inside the thin free layer on the spin-torque effects in penta-layer MTJs. We essentially explore the design space for both the aligned and anti-aligned penta-layer MTJs optimized for read/write stabilities, improved TMR and low power. The crucial role of anti-aligned penta-layer MTJs in reducing the Energy-Delay-Product (EDP) during write over tri-layer MTJs has also been reported quantitatively.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134024675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Factors enhancing In0.7Ga0.3As MOSFETs and tunneling FETs device performance 提高In0.7Ga0.3As mosfet和隧道fet器件性能的因素

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551938

H. Zhao, N. Goel, J. Huang, Y. Chen, J. Yum, Y. Wang, F. Zhou, F. Xue, J. Lee

引用次数: 3

Non-volatile spin-transfer torque RAM (STT-RAM) 非易失性自旋传递扭矩RAM (STT-RAM)

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551975

E. Chen, D. Lottis, A. Driskill-Smith, D. Druist, V. Nikitin, S. Watts, Xueti Tang, D. Apalkov

引用次数: 20

Ge-SixGe1-x core-shell nanowire tunneling field-effect transistors Ge-SixGe1-x核壳纳米线隧道场效应晶体管

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551880

J. Nah, Yonghyun Kim, E. Liu, K. Varahramyan, S. Banerjee, E. Tutuc

引用次数: 13

Device characteristics of single-layer graphene FETs grown on copper 在铜上生长的单层石墨烯fet的器件特性

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551930

K. Tahy, Margaret Jane Fleming, Barbara Raynal, V. Protasenko, S. Koswatta, D. Jena, H. Xing, M. Kelly

引用次数: 0