H. Zhao, N. Goel, J. Huang, Y. Chen, J. Yum, Y. Wang, F. Zhou, F. Xue, J. Lee
{"title":"提高In0.7Ga0.3As mosfet和隧道fet器件性能的因素","authors":"H. Zhao, N. Goel, J. Huang, Y. Chen, J. Yum, Y. Wang, F. Zhou, F. Xue, J. Lee","doi":"10.1109/DRC.2010.5551938","DOIUrl":null,"url":null,"abstract":"We demonstrate key factors enabling mobility improvement at both low charge density and high density (>5×10<sup>12</sup>/cm<sup>2</sup>) in In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum-well MOSFETs. We further show sub-threshold swing (SS) and on-current (I<inf>d</inf>) improvement in tunneling FETs (TFETs). By reducing EOT, optimizing the top-barrier/high-к interface, and confining carriers in In<inf>0.7</inf>Ga<inf>0.3</inf>As channel using In<inf>0.52</inf>Al<inf>0.48</inf>As bottom-barrier, SS and mobility of MOSFETs were improved from 152 to 99 mV/dec and from ∼2500 to ∼5000 cm<sup>2</sup>/V-s, respectively. TFETs achieved small SS (96 mV/dec) and high I<inf>d</inf> (55 µA/µm) due to low EOT and abrupt, vertical insitu grown III–V epitaxial junctions.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"203 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Factors enhancing In0.7Ga0.3As MOSFETs and tunneling FETs device performance\",\"authors\":\"H. Zhao, N. Goel, J. Huang, Y. Chen, J. Yum, Y. Wang, F. Zhou, F. Xue, J. Lee\",\"doi\":\"10.1109/DRC.2010.5551938\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate key factors enabling mobility improvement at both low charge density and high density (>5×10<sup>12</sup>/cm<sup>2</sup>) in In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum-well MOSFETs. We further show sub-threshold swing (SS) and on-current (I<inf>d</inf>) improvement in tunneling FETs (TFETs). By reducing EOT, optimizing the top-barrier/high-к interface, and confining carriers in In<inf>0.7</inf>Ga<inf>0.3</inf>As channel using In<inf>0.52</inf>Al<inf>0.48</inf>As bottom-barrier, SS and mobility of MOSFETs were improved from 152 to 99 mV/dec and from ∼2500 to ∼5000 cm<sup>2</sup>/V-s, respectively. TFETs achieved small SS (96 mV/dec) and high I<inf>d</inf> (55 µA/µm) due to low EOT and abrupt, vertical insitu grown III–V epitaxial junctions.\",\"PeriodicalId\":396875,\"journal\":{\"name\":\"68th Device Research Conference\",\"volume\":\"203 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"68th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2010.5551938\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"68th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2010.5551938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Factors enhancing In0.7Ga0.3As MOSFETs and tunneling FETs device performance
We demonstrate key factors enabling mobility improvement at both low charge density and high density (>5×1012/cm2) in In0.7Ga0.3As quantum-well MOSFETs. We further show sub-threshold swing (SS) and on-current (Id) improvement in tunneling FETs (TFETs). By reducing EOT, optimizing the top-barrier/high-к interface, and confining carriers in In0.7Ga0.3As channel using In0.52Al0.48As bottom-barrier, SS and mobility of MOSFETs were improved from 152 to 99 mV/dec and from ∼2500 to ∼5000 cm2/V-s, respectively. TFETs achieved small SS (96 mV/dec) and high Id (55 µA/µm) due to low EOT and abrupt, vertical insitu grown III–V epitaxial junctions.
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