Effects of nanoscale contacts to silicon nanowires on contact resistance: Characterization and Modeling

Abstract

We have shown the first experimental data related to the contact resistance associated with nanoscale contact lengths along NWs to address scaling issues. We have implemented a new model that appropriately accounts for the finite depth and depletion width of a given semiconductor that preserves resistivity values in the short contact regime. Our model permits accurate predictions for the contact resistance over the entire range of Lcontact values knowing just two experimental points, one in both the short and long contact limit.