Y. Roelens, A. Olivier, L. Desplanque, A. Noudéviwa, F. Danneville, N. Wichmann, X. Wallart, S. Bollaert
{"title":"碲δ掺杂120nm AlSb/InAs hemt:迈向亚100mv电子学","authors":"Y. Roelens, A. Olivier, L. Desplanque, A. Noudéviwa, F. Danneville, N. Wichmann, X. Wallart, S. Bollaert","doi":"10.1109/DRC.2010.5551945","DOIUrl":null,"url":null,"abstract":"In this paper, we have investigated f<inf>T</inf> variations under ultra low drain bias conditions of state of the art 120nm gate length AlSb/InAs HEMT featuring a f<inf>T</inf> / f<inf>max</inf> of 303GHz /227GHz under high bias conditions and a f<inf>T</inf> of 143GHz at 100mV drain bias voltage. A nearly linear dependence of f<inf>T</inf> versus V<inf>ds</inf> up to 100mV was observed and explained. This dependence means that f<inf>T</inf> could be easily tailored with V<inf>ds</inf> for a given application. Some points should now be investigated like the dependence of noise parameters under these low bias conditions. Unpublished studies on previous devices let us expected to obtain equal or better minimum Noise Figure NF<inf>min</inf> (1.56dB) and associated Gain G<inf>ass</inf> (5.32dB) at 30 GHz for a 100mV drain bias.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Tellurium δ-doped 120nm AlSb/InAs HEMTs: towards sub-100mV electronics\",\"authors\":\"Y. Roelens, A. Olivier, L. Desplanque, A. Noudéviwa, F. Danneville, N. Wichmann, X. Wallart, S. Bollaert\",\"doi\":\"10.1109/DRC.2010.5551945\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we have investigated f<inf>T</inf> variations under ultra low drain bias conditions of state of the art 120nm gate length AlSb/InAs HEMT featuring a f<inf>T</inf> / f<inf>max</inf> of 303GHz /227GHz under high bias conditions and a f<inf>T</inf> of 143GHz at 100mV drain bias voltage. A nearly linear dependence of f<inf>T</inf> versus V<inf>ds</inf> up to 100mV was observed and explained. This dependence means that f<inf>T</inf> could be easily tailored with V<inf>ds</inf> for a given application. Some points should now be investigated like the dependence of noise parameters under these low bias conditions. Unpublished studies on previous devices let us expected to obtain equal or better minimum Noise Figure NF<inf>min</inf> (1.56dB) and associated Gain G<inf>ass</inf> (5.32dB) at 30 GHz for a 100mV drain bias.\",\"PeriodicalId\":396875,\"journal\":{\"name\":\"68th Device Research Conference\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"68th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2010.5551945\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"68th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2010.5551945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tellurium δ-doped 120nm AlSb/InAs HEMTs: towards sub-100mV electronics
In this paper, we have investigated fT variations under ultra low drain bias conditions of state of the art 120nm gate length AlSb/InAs HEMT featuring a fT / fmax of 303GHz /227GHz under high bias conditions and a fT of 143GHz at 100mV drain bias voltage. A nearly linear dependence of fT versus Vds up to 100mV was observed and explained. This dependence means that fT could be easily tailored with Vds for a given application. Some points should now be investigated like the dependence of noise parameters under these low bias conditions. Unpublished studies on previous devices let us expected to obtain equal or better minimum Noise Figure NFmin (1.56dB) and associated Gain Gass (5.32dB) at 30 GHz for a 100mV drain bias.
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