{"title":"Al/AlOx单电子晶体管中CMOS扭结效应引起的不稳定性","authors":"A. Prager, H. George, A. Orlov, G. Snider","doi":"10.1109/DRC.2010.5551862","DOIUrl":null,"url":null,"abstract":"We present an examination of single electron transistor instability resulting from the presence of CMOS devices co-located on the same silicon substrate. This instability may impact future attempts to integrate single electron devices with CMOS circuits.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CMOS kink effect-induced instability in Al/AlOx single electron transistors\",\"authors\":\"A. Prager, H. George, A. Orlov, G. Snider\",\"doi\":\"10.1109/DRC.2010.5551862\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an examination of single electron transistor instability resulting from the presence of CMOS devices co-located on the same silicon substrate. This instability may impact future attempts to integrate single electron devices with CMOS circuits.\",\"PeriodicalId\":396875,\"journal\":{\"name\":\"68th Device Research Conference\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"68th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2010.5551862\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"68th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2010.5551862","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CMOS kink effect-induced instability in Al/AlOx single electron transistors
We present an examination of single electron transistor instability resulting from the presence of CMOS devices co-located on the same silicon substrate. This instability may impact future attempts to integrate single electron devices with CMOS circuits.