S. Bhowmick, G. Huang, W. Guo, C.S. Lee, P. Bhattachary, G. Ariyawansa, A. Perera
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引用次数: 1
摘要
长波长和太赫兹(THz)辐射的检测对于包括分子光谱、医学诊断、安全和监视、质量控制和天文学在内的许多应用都很重要。基于半导体的量子点(QD)和量子环(QR)探测器[1,2]已被用于探测长波辐射。虽然某些应用需要设备的高温操作,但也需要在低温下操作的太赫兹探测器,特别是天文学和空间应用。半导体探测器的另一个挑战是在1-3太赫兹范围内工作。我们在此报道了一种InAs/GaAs量子环亚能级间探测器(QRID),其光谱响应峰值为1.82 THz(165µm),峰值响应率Rp为25 a /W,比探测率D*为1×1016 Jones, 1 V偏压为5.2 K。在10 K时,光谱响应峰值为2.4 THz(125µm), Rp = 3 A/W, D* = 3×1015 Jones。这些特性与目前使用的辐射热计相比非常有利。
A quantum ring detector for the 1–3 terahertz range with very high responsivity and specific detectivity
The detection of long wavelength and terahertz (THz) radiation is important for a number of applications including molecular spectroscopy, medical diagnostics, security and surveillance, quality control, and astronomy. Semiconductor based quantum dot (QD) and quantum ring (QR) detectors [1, 2] have been used for the detection of long wavelength radiation. While high temperature operation of the devices is desired for some applications, THz detectors operating at low temperatures are also in demand, particularly for astronomy and space applications. Another challenge for semiconductor-based detectors is operation in the 1–3 THz range. We report here a InAs/GaAs quantum ring intersublevel detector (QRID) with spectral response peaking at 1.82 THz (165 µm) and having a peak responsivity Rp of 25 A/W and specific detectivity D* of 1×1016 Jones for 1 V bias at 5.2 K. At 10 K, the spectral response peaks at 2.4 THz (125 µm) with Rp = 3 A/W and D* = 3×1015 Jones. These characteristics compare very favorably with those of bolometers that are currently used.