用于无像素刷新的静态有源矩阵OLED显示器的高保留时间非易失性非晶硅TFT存储器

68th Device Research Conference Pub Date : 2010-06-21 DOI:10.1109/DRC.2010.5551896

Yifei Huang, B. Hekmatshoar, S. Wagner, J. Sturm

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引用次数: 7

摘要

现有的a-Si浮栅TFT (FG-TFT)非易失性存储器存在两个缺点:(i)保持时间短([1])和(ii)漏极饱和电流(ID,SAT)对漏极电压[2]的依赖性强。在本研究中，我们提出了(i)一种新的器件结构，消除了ID,SAT对漏极电压的依赖;(ii)室温保存期为10年;(iii)将这种新的TFT存储器集成到AMOLED像素中，使显示无需刷新。

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High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh

Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time [1] and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage [2]. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh.

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68th Device Research Conference

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