含HfO2栅极电介质的单层和双层石墨烯中载流子迁移率的厚度依赖性

B. Fallahazad, Seyoung Kim, L. Colombo, E. Tutuc
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引用次数: 0

摘要

石墨烯是一种蜂窝晶格中的二维碳原子层,由于其高(bbb10万cm2/Vs)的固有迁移率,它有可能成为未来电子技术的替代通道材料。了解具有高k介电体的石墨烯器件中的载流子散射机制是实现结合高电容和高电子迁移率的顶级介电-金属堆叠的关键。在这里,我们提供了载流子迁移率作为HfO2介电厚度和温度的函数的系统研究。我们的研究结果表明,载流子迁移率在顶部电介质的前2-4 nm的沉积过程中下降,而在较厚的层中保持不变。载流子迁移率对温度的依赖性相对较弱,表明声子散射在降低载流子迁移率中并不起主导作用。结果强烈表明,靠近石墨烯的固定带电杂质是导致迁移率下降的原因。我们推测,在高钾电介质中普遍存在的带正电的氧空位是迁移率的限制因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thickness dependence of carrier mobility in mono- and bi-layer graphene with HfO2 gate dielectric
Graphene, a two-dimensional layer of carbon atoms in a honeycomb lattice, can potentially serve as an alternative channel material for future electronics technology owing to its high (> 10,000 cm2/Vs) intrinsic mobility. Understanding the carrier scattering mechanism in graphene devices with high-k dielectrics is key to enabling top dielectric-metal stacks that combine a high capacitance and high electron mobility. Here we provide a systematic study of carrier mobility as a function of HfO2 dielectric thickness, and as a function of temperature. Our results show that the carrier mobility decreases during the deposition of the first 2–4 nm of top dielectric, and remains constant for thicker layers. The carrier mobility dependence on temperature is relatively weak, indicating that phonon scattering does not play a dominant role in degrading the carrier mobility. The results strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation. We speculate that positively charged oxygen vacancies, ubiquitous in high-k dielectrics, are the mobility limiting factor.
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