ZnO薄膜晶体管和电路的伽玛射线辐照

D. Zhao, D. Mourey, T. Jackson
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引用次数: 5

摘要

电子设备和电路的辐射容忍度是空间和一些其他恶劣环境应用的兴趣。设计合理的深亚微米栅极长度Si mosfet在100 kGy (10 Mrad)甚至更大的剂量下可以有很小的阈值电压偏移和泄漏增加[1],而多晶硅薄膜晶体管(TFTs)在低得多的剂量下(< 1 kGy)表现出显著的变化[2],a-Si:H TFTs在10 kGy剂量下具有电压范围阈值电压偏移[3]。本文报道了伽玛射线辐照对等离子体增强原子层沉积(PEALD) ZnO tft和电路的影响。设备和电路即使在1mgy 60Co伽马射线照射后也能正常工作,辐射引起的设备变化可以通过适度温度(200°C)退火去除。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gamma-ray irradiation of ZnO thin film transistors and circuits
The radiation tolerance of electronic devices and circuits is of interest for space and some other harsh environment applications. Properly designed deep submicron gate length Si MOSFETs can have small threshold voltage shift and leakage increase for doses of 100 kGy (10 Mrad) or even larger [1], however polysilicon thin film transistors (TFTs) show significant changes at much lower dose (< 1 kGy) [2] and a-Si:H TFTs have volt-range threshold voltage shift for 10 kGy dose [3]. We report here the effects of gamma-ray irradiation on plasma enhanced atomic layer deposition (PEALD) ZnO TFTs and circuits. Devices and circuits function even after 1 MGy 60Co gamma ray exposure and radiation induced device changes are removed by a modest temperature (200 °C) anneal.
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