{"title":"Assessment of Silicone Encapsulants for Hybrid Integrated Circuits (HIC)","authors":"A. Christou","doi":"10.1109/TPHP.1977.1135200","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135200","url":null,"abstract":"A silicone encapsulant has been investigated as to its effectiveness in preventing migrated gold resistive shorts (MGRS). Using a temperature cycle of -10°C to +100°C, MGRS formation was observed at moisture levels of 0.9 to 1.2 percent V/V for Cl-, 1-, K+, and Na+ion contaminated environments. The results indicate that water molecules and halogen, Na+and K+ions will be readily transmitted through the silicone material. Dendritic growth has been found to occur when threshold water and ion levels were exceeded. A technique for measuring the kinetics Of moisture penetration through encapsulants is described. The method consists of utilizing moisture mi-. crosensors bonded within the candidate hybrid package; followed by microspot AES, EDXA analysis of ionic contamination. The test results from the hybrid moisture microsensors are compared with kinetics data' obtained by measuring surface currents on .thermal SiO 2 . Measured moisture and ionic contamination levels and the formation of MGRS in the presence of Na, I, K, Cl, S ions are summarized.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129856922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Lead-Indium for Controlled-Collapse Chip Joining","authors":"L. Goldmann, R. Herdzik, N. Koopman, V. Marcotte","doi":"10.1109/TPHP.1977.1135198","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135198","url":null,"abstract":"Lead-indium for flip-chip solder (\"controlled-collapse\") connections has been investigated as a possible alternative to the commonly used 5-95 tin-lead. In thermal cycle tests, lead-indium was substantially mote resistant than tin-lead to fatigue resulting from chipsubstrate mismatch. The lead-indium that has been studied most extensively, 50-50 by weight, gives a 3:1 improvement in lifetime over 595 and is compatible with standard chip and substrate processing. Evaporated above a Cr-Cu-Au pad on the chip surface, the solder is eventually joined to tinned Cr--Cu lands on the ceramic substate. Because of its lower melting point, lead-indium can be joined at a lower temperature than 5-95 tin-lead. In its reactions with copper and gold, which are present in chip and/or substrate metallizations, indium resembles tin. Gold, present only as the protective top film of the chip metallization, dissolves completely during chip joining, whereas copper is present in sufficient quantity to exceed its solubility limit, and thus forms copper-indium intermetallic layers at both interfaces. To ensure terminal strength and reliability, these layers should be stable and adherent both to the solder and to the underlying metnllizations. Lead-indium has been found to be more susceptible than lead-tin to corrosion in high-humidity and hostile environments. This susceptibility must be borne in mind when lead-indium is considered for nonhermetic applications.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122912067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reduced Gold-Plating on Copper Leads for Thermocompression Bonding--Part II: Long Term Reliability","authors":"N. Panousis, P. Hall","doi":"10.1109/TPHP.1977.1135202","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135202","url":null,"abstract":"This two-part series is an evaluation of the acceptability for thermocompression (TC) bonding of Cu leads having reduced thicknesses of Au-plating at the bond sites. Part I was concerned with initial characterization which made use of recent grain boundary diffusion work in the Cu-Au system. In this second part, long term reliability is considered where use is made of recent work in volume interdiffusion in the Cu-Au system. Three properties are evaluated: 1) Long term reliability based on accelerated aging of bonded leads; 2) temperature cycling; and 3) cyclic 45° bend fatigue. Results of these evaluations are the following. 1) A lifetime of greater than 40 years at 50° C is predicted for Cu leads with as little as 0.7 µm Au-plating. This conclusion was reached using volume interdiffusion as the rate controlling mechanism for the observed decrease in strengths. The same conclusion was reached from a statistical analysis of the lifetime data without making recourse to a physical model for the degradation. 2) No degradation in bond strength was observed for up through 300 temperature cycles between -40 and +150°C. 3) Cyclic 45° bend fatigue of the bonded leads was not affected by the Au-plating thicknesses studied. In summary, when the results of both parts are combined, the overall conclusion is that oxygen-free Cu leads plated with as little as 0.7 µm Au are judged acceptable for TC bonding.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124232003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Application of Magnetically Enhanced Sputtering in a Production Cylindrical Sputtering System","authors":"F. Arcidiacono","doi":"10.1109/TPHP.1977.1135216","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135216","url":null,"abstract":"A Penning cylindrical sputtering geometry has been used for the production of tantalum thin films. A simple magnetic field-shaping technique coupled with proper target design has produced films with a uniformity characteristic of a quality deposit. The technique has proven to be a cost effective way of producing a high throughput of product in a system designed for a cylindrical sputtering mode.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"452 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116501467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Effect of Solid-State Reactions Upon Solder Lap Shear Strength","authors":"C. Wright","doi":"10.1109/TPHP.1977.1135211","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135211","url":null,"abstract":"The effect of solid-state reactions between gold plating and the eutectic solders 88Au:12Ge, 80Au:20Sn, 90SN:10Au, and 85Pb: 15Au and the off eutectic solder 60SN:36Pb:4Ag upon the solder lap shear strength has been investigated at four aging temperatures ranging from 75 to 150°C. Failure analysis of the lap shear samples has shown that Au-Ge and Au-Sn solders failed cohesively whereas Sn-Au, Pb-Au, and Sn-Pb-Ag solders failed adhesively. Scanning electron micrographs and microprobe analysis of gold-solder metallographic sampies aged at 125°C revealed the presence of AuSn, AuSn 2 , AuSn 4 , and voids at the plating-solder interface of Sn-Au solder. AuSn 2 and AuSn 4 intermetallic compounds were detected at the interface of SnPb-Ag solder, and AuPb 2 was detected at the interface of Pb-Au solder. The zeta phase of the Au-Sn binary system was detected at the plating-solder interface of the Au-Sn solder. The plating-solder interface of the Au-Ge solder was devoid of any intermediate phases or intermetallic compounds. The results of the lap shear measurements have shown that all five solders can be expected to exhibit adequate strength for microelectronic purposes for >105h at a sustained temperature of <100°C when the mating materials have similar coefficients of thermal expansion. However, with dissimilar thermal expansion coefficients, the SnAu and Sn-Pb-Ag solders both failed catastrophically within 103h at 100°C","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132962877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"When Heat Losses in a Better Capacitor May Be More than in a Poorer One","authors":"M. Lerner","doi":"10.1109/TPHP.1977.1135187","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135187","url":null,"abstract":"Nonsinusoidal voltage when applied to a capacitor may cause high or low heat dissipation depending on both the voltage waveform and the parameters of the capacitor. It has been commonly assumed that the lower the dissipation factor of a capacitor, the lower its heat losses should be. However, for some specific forms of voltage the heat dissipation in a capacitor with a lesser dissipation factor may exceed the losses in one with a larger dissipation factor. A scalene triangular voltage is investigated. The ratio of the maximum to minimum possible losses, named the danger coefficient, is calculated with the help of the Laplace transform. Graphs are plotted which may be used to define conditions of high heat dissipation for any type of capacitor when a succession of triangular pulses is applied.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115561208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nonhermeticity of Polymeric Lid Sealants","authors":"R. Traeger","doi":"10.1109/TPHP.1977.1135193","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135193","url":null,"abstract":"Organic adhesives are useful lid sealants because they are processed at low temperatures, are inexpensive, and are easy to rework. However, there has been concern about the degree of protection organics can provide moisture-sensitive components. Data presented in this paper show that organic adhesives can seal packages which pass gross and fine leak tests but allow water vapor to permeate rapidly. Permeation measurements on hybrid microcircuit packages gave seal permeabilities of 3-7 x 10-11g/cm-s-torr; these permeabilities agree with those listed for epoxies in the literature. With this permeability range and the package configuration used in this study, the interior humidity of a package will reach 50 percent of the exterior humidity in 6-10 h.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127459125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Use of Acoustic Emission in a Test for Beam-Lead, TAB, and Hybrid Chip Capacitor Bond Integrity","authors":"G. Harman","doi":"10.1109/TPHP.1977.1135184","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135184","url":null,"abstract":"The use of acoustic emission (AE) in a test for beam-lead bond and anchor integrity has been investigated. AE refers to the emission of broad-band stress waves when materials are broken, cracked, or deformed. A major problem in the present work was to develop means of nondestructively stressing the delicate, irregularly extending beam leads. The most promising of the methods developed are a silicone rubber (SR) pull test, a push down test on SR-encapsulated devices, and various probe methods of applying force to the beams without contacting the chip. AE bursts from weak bonds or beam anchors axe detected with a substrate detector operating at 375 kHz or a probe detector operating at 1.1 MHz or both. The study has revealed considerable difference in the mechanical integrity of beam-lead bond-anchor systems. General deterioration of the beam-anchor system begins at pull forces per beam of approximately 1.0-2.5 gramsforce (gf), depending on the manufacturer's procedure. The forces applied to the beam-anchor system for all methods of stressing, except the pull test, are dependent upon the shape of the individual beams as they extend from the chip, as well as the uniformity of the bugging height. There are many other potential uses of AE in electronics, such as to insure the bonding integrity of flip chips, capacitor chips in hybrids, and bonds on tape automated bonded integrated circuits. The latter two uses were experimentally demonstrated in the present work. Thus it appears that AE will have an increasing role in assuring reliability in the microelectronics field.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121463334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Wiring Algorithms for the Computer-Aided Layout of Multilayer Hybrid Microcircuits","authors":"I. R. Price, P. Moran","doi":"10.1109/TPHP.1977.1135190","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135190","url":null,"abstract":"The interconnection algorithm originally presented by Lee is outlined and some of its features are discussed. The implications of the various technologies to which it may be applied are presented, and it is shown that for multilayer hybrid microcircuits the algorithm can be extended to advantage. Typical results using the extended algorithm are given.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127367837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Gas Infusion in Doubled Hermetic Enclosures","authors":"S. Ruthberg","doi":"10.1109/TPHP.1977.1135183","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135183","url":null,"abstract":"In certain critical applications it is current practice to incorporate sealed electron devices within an outer hermetic enclosure for increased seal assurance. An exact solution is now given for the gas influx into such a doubled hermetic enclosure when each enclosure has a given leak size. This solution allows a comparison to be made between the leakage into a single isolated semiconductor package and that into the same package when it is protected by an outer enclosure. If the leaks are in the molecular flow regime, solutions for the pressure within the enclosures are of the form P_i = A_i e^{-(alpha - Beta)t} + B_i e^{-(alpha + beta)t} + P_b for i = 1,2, where P b is the external applied pressure at t > 0 and alpha , beta are constants whose values depend only on the ratios of leak rates and of volumes. The general behavior is described in terms of a merit factor as a measure of the hermetic improvement for doubled enclosures over that of a single enclosure, and characteristics are derived for a broad spectrum of system dimensions. It is shown that a significant improvement in hermeticity over a long time span is not an apriori result of using an outer enclosure.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132356001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}